GOALI: Nanowire Broken-Gap Tunneling Field-Effect Transistors for High-Performance, Ultra-Low-Power Logic Applications

GOALI：用于高性能、超低功耗逻辑应用的纳米线断隙隧道场效应晶体管

• 批准号: 1102278
• 负责人: Steven Koester
• 金额: $ 33万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-08-15 至 2015-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1102278&HistoricalAwards=false
• 关键词: GOALI; Nanowire; Broken; Gap; Tunneling

Intellectual Merit: The purpose of the proposed research is to design, fabricate and characterize novel nanowire broken-gap tunneling field-effect transistors (NW BG-TFETs), devices that have the potential to substantially reduce power in computational systems by simultaneously achieving sub-60-mV/decade subthreshold slope and drive currents comparable to MOSFETs. The proposed work has strong intellectual merit as it addresses a critical problem for future CMOS scaling, which is how to reduce logic power consumption. It does so by exploring a new device concept, the NW BG-TFET that has not yet been experimentally explored. In particular, project intends to provide a thorough understanding of all aspects of the device design and operation, including the influence of interface states and trap-assisted tunneling, mechanisms that must be fully understood if this new device is to function as intended.Broader Impact: The proposed project could have substantial benefits for understanding the role of surface-mediated transport in TFETs and nanometer-scale devices in general. It also provides an ideal training ground for graduate students, in that the industrial collaboration allows students to obtain direct industry interactions that will better allow them to understand the real world applications of their research endeavors. The project also offers an opportunity for classroom education, as the device provides an ideal example of the factors that affect and ultimately limit CMOS scaling. Finally, K-12 educational outreach activities are tightly integrated into this work, and this project provides numerous opportunities for demonstrations of nanotechnology that can generate excitement about engineering and scientific careers in general.

智力优势：提出的研究目的是设计，制造和表征新型纳米线断隙隧道场效应晶体管（NW bg - tfet），该器件具有通过同时实现低于60 mv / 10年的亚阈值斜率和驱动电流可媲美mosfet的计算系统中大幅降低功耗的潜力。所提出的工作具有很强的智力价值，因为它解决了未来CMOS缩放的关键问题，即如何降低逻辑功耗。它通过探索一种新的器件概念来实现这一目标，即尚未被实验探索的NW BG-TFET。特别是，该项目旨在全面了解设备设计和操作的各个方面，包括界面状态和陷阱辅助隧道的影响，如果这种新设备要按预期工作，必须充分了解这些机制。更广泛的影响：拟议的项目可能对理解表面介导的输运在tfet和纳米级器件中的作用有实质性的好处。它也为研究生提供了一个理想的训练基地，因为工业合作使学生能够获得直接的行业互动，这将更好地让他们了解他们的研究成果在现实世界中的应用。该项目还为课堂教育提供了机会，因为该器件提供了影响并最终限制CMOS缩放的因素的理想示例。最后，K-12教育推广活动与这项工作紧密结合，该项目为纳米技术的演示提供了许多机会，可以激发人们对工程和科学事业的兴趣。