Negative Capacitance Phosphorene Tunneling Field Effect Transistors

负电容磷烯隧道场效应晶体管

• 批准号: 1708769
• 负责人: Steven Koester
• 金额: $ 37万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-08-01 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1708769&HistoricalAwards=false
• 关键词: Negative; Capacitance; Phosphorene; Tunneling; Field

The project intends to study the problem of how to create a transistor that can be switched between its "on" and "off" states with less energy than a conventional transistor. It attempts to break through a fundamental problem in semiconductor chip technology called the "thermionic" limit by combining two mechanisms, tunneling and ferroelectricity, with the emerging field of two-dimensional materials. Such a technology would be a breakthrough in the semiconductor industry leading to smaller computer chips that could perform more functions, and be more easily integrated into mobile and internet-of-things applications. The project will be an ideal training ground for graduate students, as they will simultaneously be able to work on a problem of vital importance to the semiconductor industry, while at the same time, explore many fundamental aspects of quantum mechanics, material science and device physics. Aspects of this work will also be utilized in an undergraduate semiconductor device class, where the results provide an ideal example of a device that combines several "end-of-the-roadmap" concepts. Finally, the results from this project will be incorporated into a summer school outreach program at the University of Minnesota and be utilized for K-12 outreach activities such as in-class demonstrations and interactive activities that can generate excitement about engineering and scientific careers in general.The goal of the proposed research is to design, fabricate, characterize and analyze the properties of a novel steep-subthreshold slope negative capacitance tunneling field-effect transistor made using the two-dimensional nanomaterial, phosphorene. The device combines two mechanisms: Fermi-function filtering and negative capacitance gate dielectrics to create a device capable of extremely sharp turn-off behavior that is well below the thermionic limit of 60 millivolts per decade. The device further utilizes phosphorene as the channel material, which is an ideal material for tunneling transistors due to its narrow band gap and anisotropic effective mass. The research scope and methods include the development of techniques to create controlled heterostructures in phosphorene with monolayer precision, study of the orientation-dependence of band-to-band tunneling in phosphorene pn junctions, investigation of ferroelectric material deposition and interface quality with phosphorene, fabrication of characterization of the novel steep-subthreshold slope device, and development of a predictive model of the device performance. The intellectual significance of the proposed work is that it addresses key technical challenges associated with two-dimensional semiconductors and ferroelectric materials and answers fundamental questions about the ultimate limits of low-energy transistor operation, thereby tackling one of the most pressing challenges facing the semiconductor device community.

该项目打算研究如何创建可以在其“ ON”和“ OFF”状态之间切换的晶体管的问题，其能量比传统晶体管更少。它试图通过将两种机制，隧道和铁电性与二维材料的新兴领域相结合，试图通过将两种机制，隧道和铁电性结合起来，在半导体芯片技术中打破一个称为“热电学”极限的基本问题。这种技术将是半导体行业的突破，导致较小的计算机芯片可以执行更多功能，并且更容易地集成到移动和互联网应用程序中。该项目将是研究生的理想培训场所，因为他们将能够解决对半导体行业至关重要的问题，同时探讨了量子力学，材料科学和设备物理学的许多基本方面。这项工作的各个方面也将在本科半导体设备类中使用，其中结果提供了一个结合了几个“末端图像”概念的设备的理想示例。 Finally, the results from this project will be incorporated into a summer school outreach program at the University of Minnesota and be utilized for K-12 outreach activities such as in-class demonstrations and interactive activities that can generate excitement about engineering and scientific careers in general.The goal of the proposed research is to design, fabricate, characterize and analyze the properties of a novel steep-subthreshold slope negative capacitance tunneling field-effect transistor made using the二维纳米材料，磷烯。该设备结合了两种机制：费米功能滤波和负电容门电介质，以创建一种能够极为清晰的关闭行为的设备，该设备远低于每十年的热电话极限。该设备进一步利用磷作为通道材料，由于其狭窄的带隙和各向异性有效质量，它是隧穿晶体管的理想材料。 The research scope and methods include the development of techniques to create controlled heterostructures in phosphorene with monolayer precision, study of the orientation-dependence of band-to-band tunneling in phosphorene pn junctions, investigation of ferroelectric material deposition and interface quality with phosphorene, fabrication of characterization of the novel steep-subthreshold slope device, and development of a predictive model of the device performance.拟议工作的智力意义在于，它解决了与二维半导体和铁电材料相关的关键技术挑战，并回答了有关低能晶体管操作的最终限制的基本问题，从而解决了半导体设备社区面临的最紧迫的挑战之一。

项目成果

Right-Angle Black Phosphorus Tunneling Field Effect Transistor

直角黑磷隧道场效应晶体管

• DOI: 10.1109/led.2019.2946763
• 发表时间: 2019
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: Robbins, Matthew C.;Golani, Prafful;Koester, Steven J.
• 通讯作者: Koester, Steven J.

Ambipolar transport in van der Waals black arsenic field effect transistors

• DOI: 10.1088/1361-6528/ab9d40
• 发表时间: 2020-10-02
• 期刊: NANOTECHNOLOGY
• 影响因子: 3.5
• 作者: Golani, Prafful;Yun, Hwanhui;Koester, Steven J.
• 通讯作者: Koester, Steven J.

Growth of black arsenic phosphorus thin films and its application for field-effect transistors

• DOI: 10.1088/1361-6528/abfc09
• 发表时间: 2021-04
• 期刊: Nanotechnology
• 影响因子: 3.5
• 作者: Nezhueyotl Izquierdo;Jason C. Myers;Prafful Golani;Adonica De Los Santos;N. Seaton;S. Koester;S. Campbell