Negative Capacitance Phosphorene Tunneling Field Effect Transistors

负电容磷烯隧道场效应晶体管

• 批准号: 1708769
• 负责人: Steven Koester
• 金额: $ 37万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-08-01 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1708769&HistoricalAwards=false
• 关键词: Negative; Capacitance; Phosphorene; Tunneling; Field

The project intends to study the problem of how to create a transistor that can be switched between its "on" and "off" states with less energy than a conventional transistor. It attempts to break through a fundamental problem in semiconductor chip technology called the "thermionic" limit by combining two mechanisms, tunneling and ferroelectricity, with the emerging field of two-dimensional materials. Such a technology would be a breakthrough in the semiconductor industry leading to smaller computer chips that could perform more functions, and be more easily integrated into mobile and internet-of-things applications. The project will be an ideal training ground for graduate students, as they will simultaneously be able to work on a problem of vital importance to the semiconductor industry, while at the same time, explore many fundamental aspects of quantum mechanics, material science and device physics. Aspects of this work will also be utilized in an undergraduate semiconductor device class, where the results provide an ideal example of a device that combines several "end-of-the-roadmap" concepts. Finally, the results from this project will be incorporated into a summer school outreach program at the University of Minnesota and be utilized for K-12 outreach activities such as in-class demonstrations and interactive activities that can generate excitement about engineering and scientific careers in general.The goal of the proposed research is to design, fabricate, characterize and analyze the properties of a novel steep-subthreshold slope negative capacitance tunneling field-effect transistor made using the two-dimensional nanomaterial, phosphorene. The device combines two mechanisms: Fermi-function filtering and negative capacitance gate dielectrics to create a device capable of extremely sharp turn-off behavior that is well below the thermionic limit of 60 millivolts per decade. The device further utilizes phosphorene as the channel material, which is an ideal material for tunneling transistors due to its narrow band gap and anisotropic effective mass. The research scope and methods include the development of techniques to create controlled heterostructures in phosphorene with monolayer precision, study of the orientation-dependence of band-to-band tunneling in phosphorene pn junctions, investigation of ferroelectric material deposition and interface quality with phosphorene, fabrication of characterization of the novel steep-subthreshold slope device, and development of a predictive model of the device performance. The intellectual significance of the proposed work is that it addresses key technical challenges associated with two-dimensional semiconductors and ferroelectric materials and answers fundamental questions about the ultimate limits of low-energy transistor operation, thereby tackling one of the most pressing challenges facing the semiconductor device community.

该项目旨在研究如何创造一种晶体管，这种晶体管可以以比传统晶体管更少的能量在“开”和“关”状态之间切换。它试图通过将隧道效应和铁电性两种机制与新兴的二维材料领域相结合，来突破半导体芯片技术中的一个基本问题，即“热离子”极限。这种技术将是半导体行业的一项突破，将带来更小的计算机芯片，这些芯片可以执行更多功能，并更容易集成到移动和物联网应用中。该项目将是研究生的理想培训基地，因为他们将能够同时研究对半导体行业至关重要的问题，同时探索量子力学、材料科学和设备物理的许多基本方面。这项工作的各个方面也将在本科生的半导体器件课程中使用，在那里，结果提供了一个结合了几个“路线图尽头”概念的器件的理想例子。最后，这个项目的成果将被纳入明尼苏达大学的暑期学校推广计划，并用于K-12推广活动，如课堂演示和互动活动，这些活动可以引起人们对工程和科学职业的兴奋。拟议的研究目标是设计、制造、表征和分析一种新型的陡峭亚阈值斜率负电容隧道场效应晶体管的特性。该器件结合了两种机制：费米函数滤波和负电容栅介质，创造了一种能够极快地关断行为的器件，远低于每十年60毫伏的热离子限制。该器件进一步利用了磷烯作为沟道材料，由于其窄的带隙和各向异性的有效质量，是一种理想的隧道晶体管材料。研究范围和方法包括开发在磷烯中建立具有单层精度的受控异质结的技术，研究磷烯pn结中带到带隧道的取向关系，研究铁电材料的沉积和与磷烯的界面质量，制作新型陡峭亚阈值斜率器件的特性，以及开发器件性能的预测模型。这项拟议工作的智力意义在于，它解决了与二维半导体和铁电材料相关的关键技术挑战，并回答了有关低能量晶体管操作的最终极限的基本问题，从而解决了半导体设备界面临的最紧迫的挑战之一。

项目成果

Right-Angle Black Phosphorus Tunneling Field Effect Transistor

直角黑磷隧道场效应晶体管

• DOI: 10.1109/led.2019.2946763
• 发表时间: 2019
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: Robbins, Matthew C.;Golani, Prafful;Koester, Steven J.
• 通讯作者: Koester, Steven J.

Ambipolar transport in van der Waals black arsenic field effect transistors

• DOI: 10.1088/1361-6528/ab9d40
• 发表时间: 2020-10-02
• 期刊: NANOTECHNOLOGY
• 影响因子: 3.5
• 作者: Golani, Prafful;Yun, Hwanhui;Koester, Steven J.
• 通讯作者: Koester, Steven J.

Growth of black arsenic phosphorus thin films and its application for field-effect transistors

• DOI: 10.1088/1361-6528/abfc09
• 发表时间: 2021-04
• 期刊: Nanotechnology
• 影响因子: 3.5
• 作者: Nezhueyotl Izquierdo;Jason C. Myers;Prafful Golani;Adonica De Los Santos;N. Seaton;S. Koester;S. Campbell