Negative Capacitance Phosphorene Tunneling Field Effect Transistors
负电容磷烯隧道场效应晶体管
基本信息
- 批准号:1708769
- 负责人:
- 金额:$ 37万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2017
- 资助国家:美国
- 起止时间:2017-08-01 至 2021-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The project intends to study the problem of how to create a transistor that can be switched between its "on" and "off" states with less energy than a conventional transistor. It attempts to break through a fundamental problem in semiconductor chip technology called the "thermionic" limit by combining two mechanisms, tunneling and ferroelectricity, with the emerging field of two-dimensional materials. Such a technology would be a breakthrough in the semiconductor industry leading to smaller computer chips that could perform more functions, and be more easily integrated into mobile and internet-of-things applications. The project will be an ideal training ground for graduate students, as they will simultaneously be able to work on a problem of vital importance to the semiconductor industry, while at the same time, explore many fundamental aspects of quantum mechanics, material science and device physics. Aspects of this work will also be utilized in an undergraduate semiconductor device class, where the results provide an ideal example of a device that combines several "end-of-the-roadmap" concepts. Finally, the results from this project will be incorporated into a summer school outreach program at the University of Minnesota and be utilized for K-12 outreach activities such as in-class demonstrations and interactive activities that can generate excitement about engineering and scientific careers in general.The goal of the proposed research is to design, fabricate, characterize and analyze the properties of a novel steep-subthreshold slope negative capacitance tunneling field-effect transistor made using the two-dimensional nanomaterial, phosphorene. The device combines two mechanisms: Fermi-function filtering and negative capacitance gate dielectrics to create a device capable of extremely sharp turn-off behavior that is well below the thermionic limit of 60 millivolts per decade. The device further utilizes phosphorene as the channel material, which is an ideal material for tunneling transistors due to its narrow band gap and anisotropic effective mass. The research scope and methods include the development of techniques to create controlled heterostructures in phosphorene with monolayer precision, study of the orientation-dependence of band-to-band tunneling in phosphorene pn junctions, investigation of ferroelectric material deposition and interface quality with phosphorene, fabrication of characterization of the novel steep-subthreshold slope device, and development of a predictive model of the device performance. The intellectual significance of the proposed work is that it addresses key technical challenges associated with two-dimensional semiconductors and ferroelectric materials and answers fundamental questions about the ultimate limits of low-energy transistor operation, thereby tackling one of the most pressing challenges facing the semiconductor device community.
该项目旨在研究如何创造一种晶体管,这种晶体管可以以比传统晶体管更少的能量在“开”和“关”状态之间切换。它试图通过将隧道效应和铁电性两种机制与新兴的二维材料领域相结合,来突破半导体芯片技术中的一个基本问题,即“热离子”极限。这种技术将是半导体行业的一项突破,将带来更小的计算机芯片,这些芯片可以执行更多功能,并更容易集成到移动和物联网应用中。该项目将是研究生的理想培训基地,因为他们将能够同时研究对半导体行业至关重要的问题,同时探索量子力学、材料科学和设备物理的许多基本方面。这项工作的各个方面也将在本科生的半导体器件课程中使用,在那里,结果提供了一个结合了几个“路线图尽头”概念的器件的理想例子。最后,这个项目的成果将被纳入明尼苏达大学的暑期学校推广计划,并用于K-12推广活动,如课堂演示和互动活动,这些活动可以引起人们对工程和科学职业的兴奋。拟议的研究目标是设计、制造、表征和分析一种新型的陡峭亚阈值斜率负电容隧道场效应晶体管的特性。该器件结合了两种机制:费米函数滤波和负电容栅介质,创造了一种能够极快地关断行为的器件,远低于每十年60毫伏的热离子限制。该器件进一步利用了磷烯作为沟道材料,由于其窄的带隙和各向异性的有效质量,是一种理想的隧道晶体管材料。研究范围和方法包括开发在磷烯中建立具有单层精度的受控异质结的技术,研究磷烯pn结中带到带隧道的取向关系,研究铁电材料的沉积和与磷烯的界面质量,制作新型陡峭亚阈值斜率器件的特性,以及开发器件性能的预测模型。这项拟议工作的智力意义在于,它解决了与二维半导体和铁电材料相关的关键技术挑战,并回答了有关低能量晶体管操作的最终极限的基本问题,从而解决了半导体设备界面临的最紧迫的挑战之一。
项目成果
期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Right-Angle Black Phosphorus Tunneling Field Effect Transistor
直角黑磷隧道场效应晶体管
- DOI:10.1109/led.2019.2946763
- 发表时间:2019
- 期刊:
- 影响因子:4.9
- 作者:Robbins, Matthew C.;Golani, Prafful;Koester, Steven J.
- 通讯作者:Koester, Steven J.
Ambipolar transport in van der Waals black arsenic field effect transistors
- DOI:10.1088/1361-6528/ab9d40
- 发表时间:2020-10-02
- 期刊:
- 影响因子:3.5
- 作者:Golani, Prafful;Yun, Hwanhui;Koester, Steven J.
- 通讯作者:Koester, Steven J.
Growth of black arsenic phosphorus thin films and its application for field-effect transistors
- DOI:10.1088/1361-6528/abfc09
- 发表时间:2021-04
- 期刊:
- 影响因子:3.5
- 作者:Nezhueyotl Izquierdo;Jason C. Myers;Prafful Golani;Adonica De Los Santos;N. Seaton;S. Koester;S. Campbell
- 通讯作者:Nezhueyotl Izquierdo;Jason C. Myers;Prafful Golani;Adonica De Los Santos;N. Seaton;S. Koester;S. Campbell
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
Steven Koester其他文献
Super-Resolution by Combination of a Solid Immersion Lens and an Aperture
固体浸没透镜和光圈组合的超分辨率
- DOI:
- 发表时间:
2001 - 期刊:
- 影响因子:0
- 作者:
T. Milster;F. Akhavan;M. Bailey;J. K. Erwin;David Felix;K. Hirota;Steven Koester;K. Shimura;Yan Zhang - 通讯作者:
Yan Zhang
Tamoxifen stimulates in vivo growth of drug-resistant estrogen receptor-negative breast cancer
- DOI:
10.1007/bf00735926 - 发表时间:
1993-09-01 - 期刊:
- 影响因子:2.300
- 作者:
Juhani Maenpaa;Valerie Wiebe;Steven Koester;Gregory Wurz;Vernon Emshoff;Robert Seymour;Pirkko Sipila;Michael DeGregorio - 通讯作者:
Michael DeGregorio
Steven Koester的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('Steven Koester', 18)}}的其他基金
Conference: Workshop on Quantum Engineering Infrastructure II
会议:量子工程基础设施研讨会II
- 批准号:
2405015 - 财政年份:2024
- 资助金额:
$ 37万 - 项目类别:
Standard Grant
Collaborative Research: FuSe: GeSnO2 Alloys for Next-Generation Semiconductor Devices
合作研究:FuSe:用于下一代半导体器件的 GeSnO2 合金
- 批准号:
2328702 - 财政年份:2023
- 资助金额:
$ 37万 - 项目类别:
Continuing Grant
Workshop on Quantum Engineering Infrastructure. To Be Held Virtual In April 2021.
量子工程基础设施研讨会。
- 批准号:
2124834 - 财政年份:2021
- 资助金额:
$ 37万 - 项目类别:
Standard Grant
RET Site: Collaborative Research: Research Experiences for Teachers across the National Nanotechnology Coordinated Infrastructure
RET 网站:合作研究:国家纳米技术协调基础设施中教师的研究经验
- 批准号:
1953396 - 财政年份:2020
- 资助金额:
$ 37万 - 项目类别:
Standard Grant
NNCI: Midwest Nano Infrastructure Corridor (MINIC)
NNCI:中西部纳米基础设施走廊 (MINIC)
- 批准号:
2025124 - 财政年份:2020
- 资助金额:
$ 37万 - 项目类别:
Cooperative Agreement
Collaborative Research: AccelNet: Global Quantum Leap
合作研究:AccelNet:全球量子飞跃
- 批准号:
2020174 - 财政年份:2020
- 资助金额:
$ 37万 - 项目类别:
Standard Grant
GOALI: Transparent Beam Steering Antennas Enabled by Graphene Quantum Capacitance Varactors
GOALI:由石墨烯量子电容变容二极管实现的透明波束控制天线
- 批准号:
1708275 - 财政年份:2017
- 资助金额:
$ 37万 - 项目类别:
Standard Grant
EAGER: Understanding Carrier Multiplication in Black Phosphorus for High-Gain MWIR Avalanche Photodiodes
EAGER:了解高增益中波红外雪崩光电二极管的黑磷中的载流子倍增
- 批准号:
1648782 - 财政年份:2016
- 资助金额:
$ 37万 - 项目类别:
Standard Grant
NNCI: Midwest Nano Infrastructure Corrider (MINIC)
NNCI:中西部纳米基础设施走廊 (MINIC)
- 批准号:
1542202 - 财政年份:2015
- 资助金额:
$ 37万 - 项目类别:
Cooperative Agreement
GOALI: Nanowire Broken-Gap Tunneling Field-Effect Transistors for High-Performance, Ultra-Low-Power Logic Applications
GOALI:用于高性能、超低功耗逻辑应用的纳米线断隙隧道场效应晶体管
- 批准号:
1102278 - 财政年份:2011
- 资助金额:
$ 37万 - 项目类别:
Standard Grant
相似海外基金
ERI: Molecular-level Characterization of Water-in-Salt Electric Double-Layer Capacitors: Nanoscale Thermal Effects on Differential Capacitance
ERI:盐包水双电层电容器的分子级表征:微分电容的纳米级热效应
- 批准号:
2347562 - 财政年份:2024
- 资助金额:
$ 37万 - 项目类别:
Standard Grant
Modulation of spin capacitance through regulating spin moment in transition metal-doped 2D-MoS2-based anodes for application in ion batteries
通过调节过渡金属掺杂 2D-MoS2 基阳极的自旋矩来调节自旋电容,用于离子电池
- 批准号:
24K08319 - 财政年份:2024
- 资助金额:
$ 37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Neuron electronic circuits using inter-wiring capacitance and its application to neural circuits
使用线间电容的神经元电子电路及其在神经电路中的应用
- 批准号:
23K03976 - 财政年份:2023
- 资助金额:
$ 37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Capacitance curves in aprotic and aqueous electrolytes: Evaluation and data extraction using advanced thermodynamic modelling
非质子电解质和水电解质中的电容曲线:使用先进的热力学模型进行评估和数据提取
- 批准号:
510245055 - 财政年份:2022
- 资助金额:
$ 37万 - 项目类别:
Research Grants
Market assessment of A Novel Capacitance Variation Measurement Mixed-Signal Integrated Circuit Based on High-Frequency Response
基于高频响应的新型电容变化测量混合信号集成电路的市场评估
- 批准号:
576584-2022 - 财政年份:2022
- 资助金额:
$ 37万 - 项目类别:
Idea to Innovation
Quantum Capacitance Detectors with meV Resolution for Astroparticle Physics
用于天体粒子物理的具有 meV 分辨率的量子电容探测器
- 批准号:
2209581 - 财政年份:2022
- 资助金额:
$ 37万 - 项目类别:
Continuing Grant
A self-capacitance driven wearable electromyometrial imaging system for maternal and fetal monitoring during pregnancy and labor
一种自电容驱动的可穿戴式肌电成像系统,用于妊娠和分娩期间的母婴监测
- 批准号:
10666402 - 财政年份:2022
- 资助金额:
$ 37万 - 项目类别:
Mechanism of Glucose-dependent insulinotropic polypeptide (GIP) on Splanchnic Venous Capacitance in Postural Tachycardia Syndrome
葡萄糖依赖性促胰岛素多肽(GIP)对姿势性心动过速综合征内脏静脉电容的影响机制
- 批准号:
10669789 - 财政年份:2022
- 资助金额:
$ 37万 - 项目类别:
Two-Dimensional Material-Based Negative Capacitance Field-Effect Transistors for Energy-Efficient Electronics
用于节能电子产品的基于二维材料的负电容场效应晶体管
- 批准号:
575769-2022 - 财政年份:2022
- 资助金额:
$ 37万 - 项目类别:
Alexander Graham Bell Canada Graduate Scholarships - Master's
Mechanism of Glucose-dependent insulinotropic polypeptide (GIP) on Splanchnic Venous Capacitance in Postural Tachycardia Syndrome
葡萄糖依赖性促胰岛素多肽(GIP)对姿势性心动过速综合征内脏静脉电容的影响机制
- 批准号:
10522696 - 财政年份:2022
- 资助金额:
$ 37万 - 项目类别: