GOALI: Spectroscopic Ellipsometry of Transition Metal Silicides
GOALI:过渡金属硅化物的光谱椭圆光度法
基本信息
- 批准号:1104934
- 负责人:
- 金额:$ 31万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2011
- 资助国家:美国
- 起止时间:2011-08-01 至 2015-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Technical: This GOALI project is to study optical properties of transition metals and related intermetallic compounds, especially silicides. Metal and intermetallic compound films are grown on silicon and silicon oxide using physical vapor deposition at IBM. Samples are annealed to encourage grain growth, intermetallic reactions, and agglomeration (Ostwald ripening). The complex dielectric functions of the thin film materials are investigated using spectroscopic ellipsometry over a wide spectral range from the far infrared to the vacuum ultraviolet. Optical measurements are combined with semiconductor metrology techniques, particularly x-ray measurements and atomic force microscopy, to understand the film properties, intermetallic formation, and evolution of the films during materials and device processing.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. Low-resistance contacts to nanoelectronic devices require ultrathin Ohmic metal-semiconductor junctions with superior chemical, physical, and thermal stabilities. Ellipsometry allows non-contact investigations of the properties of thin metal films, intermetallic formation, and materials evolution during processing. Graduate and undergraduate students, including those in under-represented groups, will be trained for ellipsometry, metrology, semiconductor processing, and device fabrication, and learn about materials physics in industry. Well-designed capstone design projects for senior undergraduate students are an important component of the project.
技术:这个GOALI项目是研究过渡金属和相关金属间化合物,特别是硅化物的光学性质。IBM利用物理气相沉积技术在硅和氧化硅上生长金属和金属间化合物薄膜。样品经过退火以促进晶粒生长、金属间反应和团聚(奥斯特瓦尔德成熟)。利用椭圆偏振光谱在远红外到真空紫外的宽光谱范围内研究了薄膜材料的复杂介电函数。光学测量与半导体计量技术相结合,特别是x射线测量和原子力显微镜,以了解在材料和器件加工过程中薄膜的性质,金属间形成和演变。非技术:该项目涉及材料科学主题领域的基础研究问题,具有高技术相关性。纳米电子器件的低电阻接触需要超薄欧姆金属-半导体结,具有优异的化学、物理和热稳定性。椭偏仪允许在加工过程中对金属薄膜的性质、金属间形成和材料演变进行非接触研究。研究生和本科生,包括那些代表性不足的群体,将接受椭偏学、计量学、半导体加工和器件制造的培训,并学习工业中的材料物理。精心设计的高年级本科生毕业设计项目是该项目的重要组成部分。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Stefan Zollner其他文献
Stefan Zollner的其他文献
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{{ truncateString('Stefan Zollner', 18)}}的其他基金
Vibrational and Electronic Properties of Complex Metal Oxides by Spectroscopic Ellipsometry
通过椭圆偏振光谱法测定复合金属氧化物的振动和电子性质
- 批准号:
1505172 - 财政年份:2015
- 资助金额:
$ 31万 - 项目类别:
Continuing Grant
Exploratory Ellipsometric Studies of Silicon-Germanium- Carbon Alloys and Other Emerging Materials
硅锗碳合金和其他新兴材料的探索性椭偏研究
- 批准号:
9413492 - 财政年份:1994
- 资助金额:
$ 31万 - 项目类别:
Standard Grant
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Conference: 10th International Conference on Spectroscopic Ellipsometry
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适用于先进 CMOS、MEM 以及聚合物材料和器件的光谱椭偏仪
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