Atomic scale control of high-k dielectric ultrathin film grown by atomic layer-by-layer MOCVD with using in situ spectroscopic ellipsometry monitoring

利用原位光谱椭偏监测对原子逐层 MOCVD 生长的高 k 介电超薄膜进行原子尺度控制

• 批准号: 14350160
• 负责人: ODA Shunri
• 金额: $ 9.66万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350160/
• 关键词: Atomic layer-by-layer MOCVD; Spectroscopic Ellipsometry; High-k dielectrics; In situ monitoring of film growth; First principle calculation; Optical dielectric constant; Pr silicate; Angle-resolved XPS; 高誘電率ゲート酸化膜; MOSFET; チャネル移動度; ゲートリーク電流; パ

1.HfO_2 ultrathin films which are expected to be alternative high-k gate dielectrics for future miniaturized MOSFET devices are fabricated by the atomic layer-by-layer mete-organic chemical vapor deposition (MOCVD). By using an ellipsometer directly installed to the deposition chamber, we performed in situ real-time ellipsometry monitoring of HfO_2 thin film growth, and showed that this method was useful for process optimization of ultrathin film growth.2.Time evolution of in situ spectroscopic ellipsometry spectra during HfO_2 deposition was analyzed by using the calculated results of optical dielectric constants of HfO_2, SiO_2, and Hf silicate. Formation of interfacial layer at an initial stage of film growth and the following oxide formation are modeled, and these results are qualitatively consistent with the results of cross sectional TEM images and EDX analysis.3.Pr silicate ultrathin films are fabricated by MOCVD. From the angle-resolved X-ray photoelectron spectra analysis, valence band offsets at the Si/Pr silicate interface and band gaps of Pr silicate are estimated. Together with the results of J-V and C-V measurements, we can conclude that Pr silicate is one of suitable materials for high-k gate dielectrics of the MOSFET at the future generation with the EOT of less than 1.0nm.

1.采用原子逐层金属有机化学气相沉积（MOCVD）技术制备了有望成为未来小型MOSFET器件替代高k栅介质的HfO_2超薄膜。利用直接安装在沉积室中的椭偏仪，对HfO_2薄膜生长过程进行了实时椭偏测量，为HfO_2薄膜生长过程的优化提供了一种有效的方法。2.利用HfO_2、SiO_2和Hf硅酸盐的光学介电常数计算结果，分析了HfO_2沉积过程中椭偏光谱的时间演化规律。模拟了薄膜生长初期界面层的形成和随后氧化层的形成，这些结果与横截面TEM图像和EDX分析的结果定性一致。3.采用MOCVD方法制备了Pr硅酸盐薄膜。从角分辨X射线光电子能谱分析，在硅/Pr硅酸盐界面的价带偏移和Pr硅酸盐的带隙估计。结合J-V和C-V测量结果，我们可以得出结论：硅酸镨是下一代MOSFET高k栅介质的合适材料之一，其EOT小于1.0nm。

项目成果

Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung T.Hattori, S.Oda: "Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry"Japanese Journal of Applied Physics. 42(4A)(印刷中). (2003)

Y.Tsuchiya，M.Endo，M.Kurosawa，R.T.Tung T.Hattori，S.Oda：“通过光谱椭圆光度法进行原位监测的高 k 介电薄膜的脉冲源 MOCVD”日本应用物理学杂志 42（ 4A）（正在出版）（2003）。

Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung T.Hattori, S.Oda: "Atomic Layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry"Extended Abstracts of the 2002 International Conference on Solid State Devices an

Y.Tsuchiya、M.Endo、M.Kurosawa、R.T.Tung T.Hattori、S.Oda：“通过光谱椭圆光度法进行原位监测的高 k 介电薄膜的原子层接层 MOCVD”扩展摘要

Y.Tsuchiya, H.Fujita, H.Nohira, T.Hattori, H.Mizuta, S.Oda: "Fabrication and Characterization of Praseodymium Silicate Grown by MOCVD"Extended Abstracts of the 9^<th> Workshop on Formation, Characterization, and Reliability of Ultrathin Silicon Oxides. 21

Y.Tsuchiya、H.Fujita、H.Nohira、T.Hattori、H.Mizuta、S.Oda：“MOCVD 生长的硅酸镨的制造和表征”第 9 次形成、表征研讨会的扩展摘要，

Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung, T.Hattori, S.Oda: "Atomic Layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry"Extended Abstracts of the 2002 International Conference on Solid State Devices a

Y.Tsuchiya、M.Endo、M.Kurosawa、R.T.Tung、T.Hattori、S.Oda：“通过光谱椭圆光度法进行原位监测的高 k 介电薄膜的原子层 MOCVD”扩展摘要

Y.Tsuchiya, H.Fujita, H.Nohira, T.Hattori, H.Mizuta, S.Oda: "Fabrication and Characterization of Praseodymium Silicate Grown by MOCVD"Extended Abstracts of the 9^<th> Workshop on Formation, Characterization, and Reliability of Ultrathin Silicon Oxides. (i

Y.Tsuchiya、H.Fujita、H.Nohira、T.Hattori、H.Mizuta、S.Oda：“MOCVD 生长的硅酸镨的制造和表征”第 9 次形成、表征研讨会的扩展摘要，