Direct-Write Nanomanufacturing of High Density and High Aspect Ratio Metal Electrode Arrays

高密度和高深宽比金属电极阵列的直写纳米制造

• 批准号: 1131695
• 负责人: Min-Feng Yu
• 金额: $ 27万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-08-15 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1131695&HistoricalAwards=false
• 关键词: Direct; Write; Nanomanufacturing; Density; Aspect

The project is aimed to develop and apply a nozzle array for the scale-up fabrication of high density and high aspect ratio metal electrode arrays. The development is based on a meniscus-confined electrodeposition principle that we have recently introduced and applied in ?direct writing? a variety of 3-D metal micro and nanostructures in an ambient environment, including high aspect ratio out-of-plane metal wires, submicron electrical interconnects, and curved and coiled micro/nanostructures. By scaling up the manufacturing process, the proposed development is positioned to provide a leap-forward advance in capabilities for manufacturing 3-D microscale and nanoscale metal structures with unprecedented dimensional and shape controls, all in an ambient environment and in a direct-write means. The developed processes will be highly attractive to microelectronics industry and device packaging industry where this technology offers a brand new way of fabricating 3-D high density electrical interconnects with microscale and even nanoscale feature sizes while significantly simplifies the fabrication process, greatly expands the design flexibility, considerably reduces the size and ultimately provides great cost savings. The methods and technologies developed in this project are also appealing subjects for the education of students and the public, and will be broadly integrated into various educational programs to effectively train the next generation work force and educate the public the benefit of scientific advancement.

该项目旨在开发和应用一种喷嘴阵列，用于高密度和高纵横比金属电极阵列的规模化制造。这一发展是基于我们最近在？直接写?环境中的各种三维金属微纳米结构，包括高纵横比的面外金属线，亚微米电互连，弯曲和卷曲的微/纳米结构。通过扩大制造工艺，提出的发展定位是在制造三维微尺度和纳米尺度金属结构的能力方面提供一个跨越式的进步，具有前所未有的尺寸和形状控制，所有这些都是在环境环境和直接写入方式中进行的。所开发的工艺对微电子工业和器件封装工业具有很大的吸引力，该技术为制造具有微米级甚至纳米级特征尺寸的三维高密度电互连提供了一种全新的方法，同时大大简化了制造工艺，极大地扩展了设计灵活性，大大减小了尺寸，并最终提供了巨大的成本节约。在这个项目中开发的方法和技术也是吸引学生和公众教育的主题，并将广泛整合到各种教育计划中，以有效地培养下一代劳动力，并教育公众科学进步的好处。