Collaborative Research: Intrinsic Limits of Transport in Graphene Nanoribbons
合作研究:石墨烯纳米带传输的内在极限
基本信息
- 批准号:1201982
- 负责人:
- 金额:$ 22万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2012
- 资助国家:美国
- 起止时间:2012-04-15 至 2013-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this program is to elucidate the fundamental limiting mechanisms of charge and heat transport in graphene nanoribbons (GNRs), which are quasi-1-dimensional (1D) devices obtained from 2D graphene. The combined experimental and theoretical approach of the PIs will study the influence of width, substrate, edge roughness and decoration on the electronic and thermal properties of GNRs over a wide range of temperatures and applied electric fields. The intellectual merit lies in revealing the fundamental limitations of current and heat flow in GNRs, which could be used to implement both transistors and interconnects and have a trans-formative effect on modern electronics. This project will span from nanomaterials and devices to comprehensive microscopic simulation to guide and interpret the experiments. Tuning of width and control of the edge roughness or functionalization achieved in this program would open new vistas for the manipulation of electronic, thermal, and thermoelectric response of GNRs. The fundamental knowledge resulting from this work would apply to other quasi-1D systems where variability, edge roughness, and substrate effects become important. The broader impacts include (1) the creation of a broad educational environment for gradu-ate students through the experimental-theoretical nature of the project, (2) student exchanges and regular visits to facilitate a vibrant collaboration between the two nearby campuses, (3) involve-ment of undergraduates in research and publishing, (4) mentoring of women and minorities, and (5) interacting with K-12 students through local resources (the UIUC Nano-CEMMS center and the UW-Madison MRSEC), and with a world-wide audience through the nanoHUB.org.
该计划的目的是阐明石墨烯纳米带(GNRs)中电荷和热传输的基本限制机制,GNRs是从2D石墨烯获得的准一维(1D)器件。PI的实验和理论相结合的方法将研究宽度,衬底,边缘粗糙度和装饰的影响,在很宽的温度范围内的GNRs的电子和热性能和施加的电场。 其智力价值在于揭示了GNR中电流和热流的基本限制,这些限制可用于实现晶体管和互连,并对现代电子产品产生变革性影响。该项目将从纳米材料和设备到全面的微观模拟,以指导和解释实验。在这个程序中实现的宽度和控制的边缘粗糙度或功能化的调整将打开新的前景的电子,热和热电响应的GNRs的操纵。从这项工作中得到的基本知识将适用于其他准一维系统的可变性,边缘粗糙度和基板的影响变得重要。 更广泛的影响包括:(1)通过该项目的实验-理论性质,为研究生创造了一个广阔的教育环境,(2)学生交流和定期访问,以促进附近两个校区之间充满活力的合作,(3)本科生参与研究和出版,(4)指导妇女和少数民族,和(5)通过当地资源(UIUC纳米CEMMS中心和UW-Madison MRSEC)与K-12学生互动,并通过nanoHUB.org与世界各地的观众互动。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Eric Pop其他文献
A Stacked Graphene-Al2O3 Nanopore Architecture for DNA Detection
- DOI:
10.1016/j.bpj.2011.11.3959 - 发表时间:
2012-01-31 - 期刊:
- 影响因子:
- 作者:
Shouvik Banerjee;B. Murali Venkatesan;David Estrada;Xiaozhong Jin;Vincent Dorgan;Vita Solovyeva;Myung-Ho Bae;Narayana Aluru;Eric Pop;Rashid Bashir - 通讯作者:
Rashid Bashir
Recommended methods to study resistive switching devices
- DOI:
Advanced Electronic Materials - 发表时间:
2018 - 期刊:
- 影响因子:
- 作者:
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini - 通讯作者:
Daniele Ielmini
High Field Breakdown Characteristics of Carbon Nanotube Thin High Field Breakdown Characteristics of Carbon Nanotube Thin Film Transistors Film Transistors
碳纳米管薄膜的高场击穿特性 碳纳米管薄膜晶体管的高场击穿特性 薄膜晶体管
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
Man Prakash;G. W. Woodruff;A. Behnam;Feifei Lian;David Estrada;Eric Pop;Satish Kumar;G. W. Woodruff - 通讯作者:
G. W. Woodruff
What Are 2D Materials Good For?
- DOI:
10.1109/nmdc57951.2023.10343744 - 发表时间:
2023-10 - 期刊:
- 影响因子:0
- 作者:
Eric Pop - 通讯作者:
Eric Pop
SANTA: Self-aligned nanotrench ablation via Joule heating for probing sub-20 nm devices
- DOI:
10.1007/s12274-016-1180-0 - 发表时间:
2016-07-13 - 期刊:
- 影响因子:9.000
- 作者:
Feng Xiong;Sanchit Deshmukh;Sungduk Hong;Yuan Dai;Ashkan Behnam;Feifei Lian;Eric Pop - 通讯作者:
Eric Pop
Eric Pop的其他文献
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{{ truncateString('Eric Pop', 18)}}的其他基金
DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
- 批准号:
1534279 - 财政年份:2015
- 资助金额:
$ 22万 - 项目类别:
Standard Grant
EFRI 2-DARE: Energy Efficient Electronics with Atomic Layers (E3AL)
EFRI 2-DARE:具有原子层的节能电子器件 (E3AL)
- 批准号:
1542883 - 财政年份:2015
- 资助金额:
$ 22万 - 项目类别:
Standard Grant
CAREER: Fundamental and Device-Oriented Approach to Energy Efficient Carbon Nanoelectronics
职业:节能碳纳米电子学的基础和面向设备的方法
- 批准号:
1430530 - 财政年份:2013
- 资助金额:
$ 22万 - 项目类别:
Standard Grant
Collaborative Research: Intrinsic Limits of Transport in Graphene Nanoribbons
合作研究:石墨烯纳米带传输的内在极限
- 批准号:
1346858 - 财政年份:2013
- 资助金额:
$ 22万 - 项目类别:
Standard Grant
CAREER: Fundamental and Device-Oriented Approach to Energy Efficient Carbon Nanoelectronics
职业:节能碳纳米电子学的基础和面向设备的方法
- 批准号:
0954423 - 财政年份:2010
- 资助金额:
$ 22万 - 项目类别:
Standard Grant
EMT/NANO: Comprehensive Modeling of Power Dissipation, Leakage, and Non-Equilibrium Transport in Low-Dimensional Transistors
EMT/NANO:低维晶体管功耗、泄漏和非平衡传输的综合建模
- 批准号:
0829907 - 财政年份:2008
- 资助金额:
$ 22万 - 项目类别:
Standard Grant
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