EMT/NANO: Comprehensive Modeling of Power Dissipation, Leakage, and Non-Equilibrium Transport in Low-Dimensional Transistors

EMT/NANO：低维晶体管中功耗、泄漏和非平衡输运的综合建模功耗和泄漏是现代集成电路的重要问题，在未来将越来越重要。漏电是温度的一个重要函数，因此也是耗散功率的一个重要函数。然而，目前还没有纳米级、低维器件的详细模型或数据，而且人们对碳纳米管或石墨烯等热门技术中散热界面的微观行为和作用知之甚少。此外，快速开关时间（1 ps阶）与电子或声子散射时间相当，导致器件运行期间的非平衡载流子和加热。这项研究涉及对纳米级集成电路的功耗和泄漏产生全面的、微观的理解。更具体地说，它(1)扩展了现有的蒙特卡罗方法，以研究非平衡声子在功率耗散和泄漏中的作用，(2)通过分子动力学模拟对器件接口上声子耦合的微观理解，以及(3)将先进的物理理解封装为自洽电热紧凑模型，用于电路建模。该研究也被纳入PI教授的课程的课堂材料中，包括在研究生课程的背景下更新或创建新的维基百科文章。模型和计算机代码通过NSF/NCN计算nanoHUB免费提供。从自下而上、器件和材料的角度来看，我们对纳米级器件功率问题的理解的突破可能会导致热效率电路和系统设计的革命性方法。

EMT/NANO: Comprehensive Modeling of Power Dissipation, Leakage, and Non-Equilibrium Transport in Low-Dimensional TransistorsEric Pop ? University of Illinois at Urbana-Champaign Power dissipation and leakage are significant concerns of modern integrated circuits, and increasingly important in the future. Leakage is a strong function of temperature, and hence of the power dissipated. However, no detailed models or data exist for nanoscale, low-dimensional devices, and little is known about the microscopic behavior and role of interfaces for heat dissipation in technologies of high interest such as carbon nanotubes or graphene. In addition, fast switching times (of order 1 ps) are comparable to electron- or phonon-scattering times, leading to non-equilibrium carriers and heating during device operation. This research involves producing a comprehensive, microscopic understanding of power dissipation and leakage in nanometer-scale integrated circuits. More specifically it (1) extends an existing Monte Carlo approach to investigate the role of non-equilibrium phonons on power dissipation and leakage, (2) pursues a microscopic understanding of phonon coupling across device interfaces with Molecular Dynamics simulations, and (3) wraps up the advanced physical understanding into self-consistent electrical-thermal compact models to be used in circuit modeling. The research is also incorporated into classroom materials for the courses taught by the PI, including updating or creating new Wikipedia articles in the context of a graduate class. Models and computer codes are made freely available through the NSF/NCN computational nanoHUB. A breakthrough in our understanding of nanoscale device power issues can lead to a revolutionary approach to thermally efficient circuit and system design, from a bottom-up, device and materials perspective.