EMT/NANO: Comprehensive Modeling of Power Dissipation, Leakage, and Non-Equilibrium Transport in Low-Dimensional Transistors

EMT/NANO：低维晶体管功耗、泄漏和非平衡传输的综合建模

• 批准号: 0829907
• 负责人: Eric Pop
• 金额: $ 15万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0829907&HistoricalAwards=false
• 关键词: EMT; NANO; Comprehensive; Modeling; Power

EMT/NANO: Comprehensive Modeling of Power Dissipation, Leakage, and Non-Equilibrium Transport in Low-Dimensional TransistorsEric Pop ? University of Illinois at Urbana-Champaign Power dissipation and leakage are significant concerns of modern integrated circuits, and increasingly important in the future. Leakage is a strong function of temperature, and hence of the power dissipated. However, no detailed models or data exist for nanoscale, low-dimensional devices, and little is known about the microscopic behavior and role of interfaces for heat dissipation in technologies of high interest such as carbon nanotubes or graphene. In addition, fast switching times (of order 1 ps) are comparable to electron- or phonon-scattering times, leading to non-equilibrium carriers and heating during device operation. This research involves producing a comprehensive, microscopic understanding of power dissipation and leakage in nanometer-scale integrated circuits. More specifically it (1) extends an existing Monte Carlo approach to investigate the role of non-equilibrium phonons on power dissipation and leakage, (2) pursues a microscopic understanding of phonon coupling across device interfaces with Molecular Dynamics simulations, and (3) wraps up the advanced physical understanding into self-consistent electrical-thermal compact models to be used in circuit modeling. The research is also incorporated into classroom materials for the courses taught by the PI, including updating or creating new Wikipedia articles in the context of a graduate class. Models and computer codes are made freely available through the NSF/NCN computational nanoHUB. A breakthrough in our understanding of nanoscale device power issues can lead to a revolutionary approach to thermally efficient circuit and system design, from a bottom-up, device and materials perspective.

EMT/NANO：低维晶体管中功耗、泄漏和非平衡输运的综合建模功耗和漏电是现代集成电路的重要问题，并且在未来越来越重要。泄漏是温度的强函数，因此也是耗散功率的强函数。然而，没有详细的模型或数据存在的纳米级，低维器件，并知之甚少的微观行为和作用的界面散热技术的高度兴趣，如碳纳米管或石墨烯。此外，快速开关时间（1 ps的顺序）是可比的电子或声子散射时间，导致非平衡载流子和加热设备操作过程中。这项研究涉及产生一个全面的，微观的理解，在纳米级集成电路的功耗和泄漏。更具体地说，它（1）扩展了现有的Monte Carlo方法，以研究非平衡声子对功耗和泄漏的作用，（2）通过分子动力学模拟对器件界面上的声子耦合进行微观理解，（3）将先进的物理理解包装成用于电路建模的自洽电热紧凑模型。该研究还被纳入PI教授的课程的课堂材料中，包括在研究生班的背景下更新或创建新的维基百科文章。模型和计算机代码通过NSF/NCN计算nanoHUB免费提供。我们对纳米器件功率问题的理解的突破可以从自下而上的器件和材料角度为热效率电路和系统设计带来革命性的方法。