Ferrimagnetic Insulator Enabled Quantum Spintronic Effects and Devices

亚铁磁绝缘体实现量子自旋电子效应和器件

• 批准号: 1202559
• 负责人: Jing Shi
• 金额: $ 36万
• 依托单位: University of California-Riverside
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-07-01 至 2016-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1202559&HistoricalAwards=false
• 关键词: Ferrimagnetic; Insulator; Enabled; Quantum; Spintronic

In this proposed research, the PI proposes to first synthesize epitaxial magnetic insulator or FMI films (e.g. Y3Fe5O12 or YIG) using pulsed laser deposition, fabricate FMI-based nanoscale spintronic devices, and investigate the unique physical properties and novel functionalities of these spintronic devices. FMI thin films have not been well studied or widely used in electronic devices, but have become increasingly important because they could enable a host of brand new spintronic devices. For example, in FMI, spin waves or magnons can be excited, transmitted, and exploited to efficiently drive domain walls via spin momentum transfer in nanoscale devices that can potentially serve as non-volatile memory. Another example is that the spin current carried by a heat current in FMI can be converted into a voltage signal which is known as the spin Seebeck effect. Furthermore, by bringing FMI in proximity to materials that have the Dirac energy dispersion (e.g. graphene and topological insulators), the exchange interaction at the interface can result in the quantized anomalous Hall effect, an effect produced by quantized edge channels in the devices. These novel phenomena have been recently predicted or are currently being explored experimentally. The PI aims to study FMI materials and FMI-enabled quantum spintronic devices in this proposed research. Intellectual merit: The proposed research will integrate several unique materials (e.g. FMI, graphene, and topological insulators) to discover distinct collective phenomena and functionalities, although many properties of individual materials are being vigorously investigated by researchers including the PI himself. This proposed research will likely yield very exciting new results that can advance our fundamental understanding of materials, their interfaces, and related new physics. Currently, the experimental work in this particular area is scarce. This proposed research represents a significantly new effort aiming to advance the field. Broader impacts: The broad impacts of this proposed research contain the following two aspects. First, Spintronics is a relatively young and thriving field. A primary objective of Spintronics is to introduce new spin related functionalities to existing devices, such as spin-based non-volatile memory devices that are ubiquitous in our modern lives. The proposed research will explore new device concepts for spintronic non-volatile memory and quantum information processing. The breakthroughs will likely inspire the researchers in industrial labs to develop more energy efficient and high-performance non-volatile memory devices. The PI himself has extensive experience in adopting new concepts for advanced device applications. Second, this proposed research will integrate the undergraduate and graduate education with the cutting-edge research activities. In particular, the PI will actively engage into this research the under-represented minority students which make up a significant portion of the student population in PI?s institution. Aligned with PI?s departmental ambitious goal in involving all physics majors in undergraduate research, which has been aggressively pushed by the PI in the past four years as the chair of the Undergraduate Advising Committee, the PI will continue to recruit more undergraduates into this and other funded research projects. The PI will incorporate the outcomes of this proposed research into the new graduate and undergraduate courses that he recently developed and taught. He will continue to pursue the education and outreach activities with K-12 that he initiated independently or jointly with the Physics Department.

在这项拟议的研究中，PI建议首先使用脉冲激光沉积合成外延磁性绝缘体或FMI薄膜（例如Y3 Fe 5 O 12或YIG），制造基于FMI的纳米级自旋电子器件，并研究这些自旋电子器件的独特物理特性和新功能。FMI薄膜还没有被很好地研究或广泛应用于电子器件，但由于它们可以实现许多全新的自旋电子器件，因此变得越来越重要。例如，在FMI中，自旋波或磁振子可以被激发、传输和利用，以在可以潜在地用作非易失性存储器的纳米级器件中经由自旋动量转移来有效地驱动畴壁。另一个例子是FMI中热流携带的自旋电流可以转换为电压信号，这被称为自旋塞贝克效应。此外，通过使FMI接近具有狄拉克能量色散的材料（例如石墨烯和拓扑绝缘体），界面处的交换相互作用可以导致量子化的异常霍尔效应，这是由器件中的量子化边缘通道产生的效应。这些新现象最近已经被预测或正在实验中探索。PI的目标是在这项拟议的研究中研究FMI材料和支持FMI的量子自旋电子器件。智力优点：拟议的研究将整合几种独特的材料（例如FMI，石墨烯和拓扑绝缘体），以发现不同的集体现象和功能，尽管包括PI本人在内的研究人员正在积极研究单个材料的许多特性。这项拟议的研究可能会产生非常令人兴奋的新结果，可以促进我们对材料、其界面和相关新物理学的基本理解。目前，在这一特定领域的实验工作很少。这项拟议中的研究代表了一项旨在推进该领域的重大新努力。更广泛的影响：这项拟议研究的广泛影响包括以下两个方面。首先，自旋电子学是一个相对年轻和蓬勃发展的领域。自旋电子学的主要目标是将新的自旋相关功能引入现有设备，例如在我们现代生活中无处不在的基于自旋的非易失性存储器设备。拟议的研究将探索自旋电子非易失性存储器和量子信息处理的新器件概念。这些突破可能会激励工业实验室的研究人员开发更节能和高性能的非易失性存储设备。PI本人在采用先进设备应用的新概念方面拥有丰富的经验。其次，这项拟议的研究将把本科生和研究生教育与前沿研究活动结合起来。特别是，PI将积极参与这项研究的代表性不足的少数民族学生，构成了学生人口的重要组成部分PI？的制度。与PI合作？的部门雄心勃勃的目标，涉及所有物理专业的本科生研究，这一直是积极推动PI在过去四年中作为本科生咨询委员会主席，PI将继续招募更多的本科生到这个和其他资助的研究项目。PI将把这项研究的成果纳入他最近开发和教授的新的研究生和本科生课程。他将继续与K-12进行他独立或与物理系联合发起的教育和推广活动。