Collaborative Research: Impurity Incorporation into Epitaxial Graphene on SiC

合作研究：SiC 上外延石墨烯的杂质掺入

• 批准号: 1206256
• 负责人: Leonard Feldman
• 金额: $ 10万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-06-15 至 2016-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1206256&HistoricalAwards=false
• 关键词: Collaborative; Research; Impurity; Incorporation; into

Technical Description: The goal of this research project is to develop a novel method to place controlled amounts of substitutional impurities into graphene grown on SiC, to physically and electronically characterize the doped structures, and to evaluate the changes in the film's properties. Impurities are implanted into a SiC wafer prior to graphene formation. The wafer is annealed to bring the impurity distribution near the surface. Then graphene is grown by sublimation of Si, simultaneously driving the impurities into the graphene film. After this process, the impurity distribution is characterized by surface analytical techniques as well as by electrical transport measurements. If successful, the method can also be applied to other two-dimensional materials.Non-technical Description: Graphene, a single layer of carbon atoms bound together in a honeycomb lattice structure, has unique electrical and mechanical properties. Effective use of these properties requires the inclusion of predetermined amounts of impurity atoms (doping) in the films. The project develops a new method to incorporate controlled amounts of atoms into a single atomic layer of graphene, and provides graduate student training in an interdisciplinary environment. In addition, undergraduate students at the University of Minnesota and at Rutgers University, as well as high school teachers working at Georgia Tech, obtain direct hands-on research experience in the project as well as study materials and new understanding resulting from the project in courses taught by the principal investigators.

技术说明：该研究项目的目标是开发一种新的方法，将控制量的替代杂质放入SiC上生长的石墨烯中，以物理和电子方式表征掺杂结构，并评估薄膜性能的变化。在石墨烯形成之前将杂质注入SiC晶片中。对晶片进行退火以使杂质分布靠近表面。然后通过Si的升华生长石墨烯，同时将杂质驱动到石墨烯膜中。在此过程之后，杂质分布的特征在于表面分析技术以及电输运测量。如果成功的话，这种方法也可以应用于其他二维材料。非技术描述：石墨烯是一种单层碳原子结合在一起的蜂窝晶格结构，具有独特的电学和机械性能。有效利用这些特性需要在膜中包含预定量的杂质原子（掺杂）。该项目开发了一种新方法，将可控数量的原子结合到石墨烯的单个原子层中，并在跨学科环境中提供研究生培训。此外，明尼苏达大学和罗格斯大学的本科生，以及在格鲁吉亚理工学院工作的高中教师，在该项目中获得直接的实践研究经验，以及在主要研究人员教授的课程中获得该项目的学习材料和新的理解。