2012 Defects in Semiconductors Gordon Research Conference at the University of New England in Biddeford, Maine from August 12-17, 2012

2012 年半导体缺陷戈登研究会议于 2012 年 8 月 12 日至 17 日在缅因州比德福德新英格兰大学举行

• 批准号: 1216412
• 负责人: Evan Glaser
• 金额: $ 0.5万
• 依托单位: Gordon Research Conferences
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-05-15 至 2013-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1216412&HistoricalAwards=false
• 关键词: 2012; Defects; Semiconductors; Gordon; Research

This grant provides partial support for Gordon Research Conference on Defects in Semiconductors at the University of New England in Biddeford, Maine on August 12-17, 2012. The conference brings together leading experts from academia, industry, and national laboratories on the topic of defects in bulk and nanostructured semiconductor material systems. The meeting contributes to the further development and advancement of the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects are addressed in a broad range of electronic materials of current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. The NSF funds are used mainly to provide financial support for graduate students, postdocs, and junior faculty members, especially from under-represented groups.

该赠款为 2012 年 8 月 12 日至 17 日在缅因州比德福德新英格兰大学举行的戈登半导体缺陷研究会议提供部分支持。该会议汇集了来自学术界、工业界和国家实验室的关于块体和纳米结构半导体材料系统缺陷主题的领先专家。这次会议有助于进一步发展和推进对缺陷及其在块体、薄膜和纳米级半导体和器件结构的结构、电子、光学和磁性特性中的作用的基本理解。点缺陷和扩展缺陷在当前感兴趣的各种电子材料中得到解决，包括宽带隙半导体、金属氧化物、碳基半导体（例如金刚石、石墨烯）、有机半导体、光伏/太阳能电池材料和其他类似的材料。 NSF 资金主要用于为研究生、博士后和初级教员，特别是代表性不足的群体提供财政支持。