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2012 Defects in Semiconductors Gordon Research Conference at the University of New England in Biddeford, Maine from August 12-17, 2012

2012 Defects in Semiconductors Gordon Research Conference at the University of New England in Biddeford, Maine from August 12-17, 2012
2012 年半导体缺陷戈登研究会议于 2012 年 8 月 12 日至 17 日在缅因州比德福德新英格兰大学举行
批准号:
1216412
负责人:
Evan Glaser
金额:
$0.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-05-15 至 2013-04-30

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英文摘要
This grant provides partial support for Gordon Research Conference on Defects in Semiconductors at the University of New England in Biddeford, Maine on August 12-17, 2012. The conference brings together leading experts from academia, industry, and national laboratories on the topic of defects in bulk and nanostructured semiconductor material systems. The meeting contributes to the further development and advancement of the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects are addressed in a broad range of electronic materials of current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. The NSF funds are used mainly to provide financial support for graduate students, postdocs, and junior faculty members, especially from under-represented groups.
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