Nitride-based resonant cavity single photon sources (A08)

氮化物谐振腔单光子源（A08）

• 批准号: 210240078
• 金额: --
• 依托单位: Institut für Physik
• 依托单位国家: 德国
• 项目类别: Collaborative Research Centres
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/210240078?language=en
• 关键词: Nitride; based; resonant; cavity; single

Nitride based UV single photon sources for room temperature operation will be fabricated and characterized in this project. Our approach is based on position controlled single GaN/AlN quantum dots grown by MOVPE inside resonant cavity structures using a nitride-based buried stressor. The optical and electronic properties of the individual single quantum dots are analyzed and directly correlated to their atomic real structure by in-TEM cathodoluminescence. Single-photon emitter devices will be developed including monolithically-integra¬ted optical elements (mirrors, resonant microcavity structures, micro lenses) for enhanced light extraction. GaN quantum dot intraband transitions will be explored for IR single photon generation at 1.3 and 1.55 µm.

本项目将制作用于室温工作的氮化物基紫外单光子源，并对其进行表征。我们的方法是基于位置控制的单个GaN/AlN量子点，由MOVPE在谐振腔结构中使用氮化物基埋入应力源生长。用电子显微镜阴极发光分析了单个量子点的光学和电学性质，并与它们的原子真实结构直接相关。单光子发射器装置将被开发，包括用于增强光提取的单片集成光学元件(反射镜、谐振微腔结构、微透镜)。GaN量子点的带内跃迁将被用来产生1.3和1.55微米的红外单光子。