EFRI 2-DARE: Ultra-Low Power, Collective-State Device Technology Based on Electron Correlation in Two-Dimensional Atomic Layers

EFRI 2-DARE：基于二维原子层电子关联的超低功耗集体态器件技术

• 批准号: 1433307
• 负责人: Joshua Robinson
• 金额: $ 200万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-09-01 至 2020-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1433307&HistoricalAwards=false
• 关键词: EFRI; DARE; Ultra; Low; Power

Abstract Title: Ultra-Low Power, Collective-State Device Technology Based on Electron Correlation in Two-Dimensional Atomic Layers.Non-Technical: Today's transistors cannot meet the demands of ultra-low power, high speed operation required in future digital technologies. Therefore, to enable a continuation of the relentless down-scaling, a transformation of the device architecture must begin with materials that exhibit fundamentally different functionalities beyond the single electron excitation in traditional semiconductors. Strongly correlated 2D materials, where the electronic phase transformation and collective excitation that determine the electronic response, and devices based on these materials (Landau switch), have the potential to become the successor of the conventional silicon technology. The logic operation is based on completely different mechanisms and the successful realization of the Landau switch concept will extend the road map of low power digital and analog circuits with large societal impact affecting both governmental and commercial sector. Our academic-industry partnerships will provide a close link to large-scale manufacturers of advanced materials and devices, thus ensuring a critical evaluation of manufacturability and large scale production while fundamental science and engineering is performed throughout the proposed research efforts. We will support four graduate students and one post-doctoral fellow, who will take full advantage of the interdisciplinary, multi-institutional, government, and industrial R&D environment provided by this collaboration. Mandatory internships at partnering institutions will enhance their educational experience, and each will participate in outreach programs designed to enhance STEM education. Technical: This research will develop a "post silicon" transistor that operates on the principle of strong electron correlation and the associated phase transitions in two-dimensional materials. To achieve this goal we will: 1) develop theory to predict the nonlinear electronic response in correlated 2D materials, 2) introduce novel synthesis routes and doping strategies, 3) utilize advanced nanoscale characterization techniques 4) develop unique device concepts enabling steep sub-thermal switching characteristics beyond the single particle excitation limit, explore advanced device fabrication and characterization, and 5) benchmark device performance and reliability against complementary metal oxide semiconductor (CMOS) technology. The proposed strategies build upon our successful development of large area synthesis, integration, and characterization of two-dimensional layered materials, theory, and characterization of materials and devices exhibiting collective electron phenomena. The themes that form the core research and outreach program are: 1) Demonstrating the first electric-field induced, reversible, phase transition in a three terminal transistor based on 1T-TaS2-xSex. [EFRI Thrust Area 1]; 2) Understanding the fundamental role of defects, dopants, functionalization, and heterogeneous integration on the electronic properties of 2D correlated systems. [EFRI Thrust Area 1]; 3) Optimizing synthesis techniques for scalable nano-manufacturing of high quality 2D layered materials. [EFRI Thrust Area 2]; 4) Developing advanced theoretical models to predict electron-electron, electron-lattice and electron-impurity interaction and its impact on electronic structure, transport phenomena and ultimately device characteristics [EFRI Thrust Area 3]; 5) Educating the next generation through a series of novel education programs focused on broadening participation and providing unique research opportunities to underrepresented minorities via collaborations with international faculty, government laboratories, and industrial partners. [Broadening Participation]

摘要标题：基于二维原子层中电子关联的超低功耗集态器件技术。非技术：今天的晶体管不能满足未来数字技术对超低功耗、高速操作的要求。因此，为了能够持续不断地缩小规模，设备架构的转变必须从表现出传统半导体中单电子激发之外的根本不同功能的材料开始。强相关的2D材料，其中决定电子响应的电子相变和集体激发，以及基于这些材料的器件(朗道开关)，有可能成为传统硅技术的继任者。逻辑操作基于完全不同的机制，朗道开关概念的成功实现将扩大低功耗数字和模拟电路的路线图，对政府和商业部门都有重大的社会影响。我们的学术和产业合作伙伴关系将为先进材料和设备的大型制造商提供密切的联系，从而确保在整个拟议的研究工作中进行基础科学和工程研究的同时，对可制造性和大规模生产进行关键评估。我们将支持4名研究生和1名博士后，他们将充分利用此次合作提供的跨学科、多机构、政府和行业研发环境。在合作机构的强制性实习将增强他们的教育经验，每个人都将参加旨在加强STEM教育的外联计划。技术：这项研究将开发一种“后硅”晶体管，其工作原理是二维材料中的强电子关联和相关相变。为了实现这一目标，我们将：1)开发理论以预测相关2D材料中的非线性电子响应；2)推出新颖的合成路线和掺杂策略，3)利用先进的纳米级表征技术4)开发独特的器件概念，使陡峭的亚热开关特性超过单粒子激发极限，探索先进的器件制造和表征，以及5)对照互补金属氧化物半导体(CMOS)技术对器件性能和可靠性进行基准测试。所提出的战略建立在我们成功地开发了大面积合成、集成和表征二维层状材料、理论以及展示集体电子现象的材料和器件的表征的基础上。形成核心研究和推广计划的主题是：1)展示基于1T-TaS2-xSex的三端子晶体管中的第一个电场诱导的可逆相变。[EFRI推力区1]；2)了解缺陷、掺杂剂、官能化和异质集成对2D相关系统的电子性质的基本作用。[EFRI推力区域1]；3)优化合成技术，以实现高质量2D层状材料的可伸缩纳米制造。[EFRI推进区2]；4)开发先进的理论模型，以预测电子-电子、电子-晶格和电子-杂质相互作用及其对电子结构、传输现象和最终器件特性的影响[EFRI推进区3]；5)通过与国际教师、政府实验室和产业合作伙伴的合作，通过一系列新的教育计划教育下一代，重点是扩大参与并为代表性不足的少数群体提供独特的研究机会。[扩大参与度]