Ge-on-Si SPADs for Quantum Communications

用于量子通信的 Ge-on-Si SPAD

• 批准号: 2749425
• 金额: --
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2749425
• 关键词: Ge; Si; SPADs; Quantum; Communications

Single-photon detectors are essential for a range of quantum technology applications such as quantum communications, quantum optics and photonic quantum information processing applications. They can also provide significant benefit com- pared to conventional p-i-n and linear avalanche photodetectors (APDs) for a range of applications including range-finding, Light Detection and Ranging (LiDAR), facial recognition and covert imaging analysis. CMOS Single Photon Avalanche Diodes (SPADs) have been commercially available for many years, but the band gap of silicon limits operation using light beyond approximately 1 um in wavelength. Adding germanium absorbers onto silicon avalanche regions allows SPADs to operate at the longer wavelengths required for telecommunications and which provides significant benefits for LiDAR as systems can operate with greater accuracy in the presence of obscurance and precipitation. Further to this, Ge-on-Si SPADs have the potential to be over 200 times cheaper than the present commercial technologies available, meaning that this area of research is receiving interest from major automotive manufacturers and telecommunication companies from around the world. The research proposed for this project will continue to develop work being undertaken at the Semiconductor Devices Group at Glasgow by delivering a new design of Ge-on-Si SPAD devices which can be easily coupled to optical fibres for use in quantum key distribution and quantum communication test systems. The Semiconductor Devices Group at the University of Glasgow is the global pioneer of such devices and has a significant lead in this silicon-based technology at short wave infrared wavelengths, demonstrating the first Ge-on-Si SPAD photodetectors and more recently record-breaking single photon detection efficiencies (SPDE). Being able to replicate this level of detection efficiency and improve other key Figures of Merit (FOMs) such as afterpulsing, jitter and Noise Equivalent Power (NEP) will be crucial to producing a new design that is suitable for use in quantum systems. The work will include designing devices, being trained to fabricate devices in the James Watt Nanofabrication Centre and the characterisation of the devices using electronic and optical techniques to determine their performance. There will be engagement with top researchers in academia and collaborators in the UK Quantum Communications Hub and UK industry to understand the end user performance requirements as well as to test successfully developed devices in real systems.

单光子检测器对于一系列量子技术应用至关重要，例如量子通信，量子光学和光子量子信息处理应用。它们还可以提供与常规的P-I-N和线性雪崩光电探测器（APD）相关的重要益处，用于一系列应用，包括范围调查，光检测和范围（LIDAR），面部识别和秘密成像分析。 CMOS单光子雪崩二极管（SPADS）已在市售多年可用，但是硅限制的带隙在波长中使用了大约1 um。在硅雪崩区域中添加锗吸收剂可以使SPAD在电信所需的较长波长下运行，并为LIDAR带来显着的好处，因为系统可以在存在晦涩和降水的情况下以更高的精度运行。除此之外，GEON SI SPAD的潜力可能比目前的商业技术便宜200倍，这意味着该研究领域正在从世界各地的主要汽车制造商和电信公司受到兴趣。该项目提出的研究将继续开发在格拉斯哥的半导体设备组进行的工作，通过提供新设计的SPAD设备的新设计，可以很容易地与光纤耦合，以在量子密钥分布和量子通信测试系统中使用。格拉斯哥大学的半导体设备组是此类设备的全球先驱，并且在短波红外波长的这项基于硅技术的技术中具有显着的领先优势，这表明了第一个GE-ON-SI SI SPAD光电电视器，并且是最近创纪录的破纪录单光子检测功能（SPDE）。能够复制该水平的检测效率并提高其他功绩（FOM）的其他关键数字（例如泵，抖动和噪声当量功率（NEP））对于生产适合在量子系统中使用的新设计至关重要。这项工作将包括设计设备，接受培训以在James Watt纳米制造中心制造设备，以及使用电子和光学技术来确定其性能的设备的表征。将与英国Quantum Communications Hub和英国行业的学术界高层研究人员和合作者进行参与，以了解最终用户绩效要求以及在真实系统中成功开发的设备。