Single quantum dot resonant tunnelling diodes and their integration

该项目的目标是将单量子点(QD)嵌入并集成到共振隧道二极管(RTD)中。这种量子点RTD将被用来研究单个和紧密堆积的量子点的电子结构。这些结果将与用低温扫描隧道光谱进行的波函数映射实验进行比较。将实现高峰谷电流比，将两个单个量子点RTD集成到单个芯片上的静态随机存取(SRAM)存储单元中。为了将单个量子点功能化和集成到RTDS中，需要控制量子点的横向位置。因此，我们计划在预图案化的衬底上进行量子点生长，这将通过原位扫描隧道显微镜进行深入研究。

The goal of this project is to embed and integrate single quantum dots (QDs) into resonant tunnelling diodes (RTDs). Such QD RTDs will be used to investigate the electronic structure of single and closely stacked QDs. These results will be compared to wave function mapping experiments carried out by low temperature scanning tunnelling spectroscopy. High peak to valley current ratios will be realized to integrate two single QD RTDs into a static random access (SRAM) memory cell on a single chip. In order to functionalise and integrate single QDs in RTDs, the lateral position of the QDs needs to be controlled. We therefore plan to carry out QD growth on pre-patterned substrates, which will be investigated in depth by insitu scanning tunnelling microscopy.