课题基金 / 基金详情

Collaborative Research: Planning Grant: I/UCRC for Next Generation Nanomaterial and Device Engineering (NGeNE)

Collaborative Research: Planning Grant: I/UCRC for Next Generation Nanomaterial and Device Engineering (NGeNE)
合作研究:规划资助:I/UCRC 下一代纳米材料和器件工程 (NGeNE)
批准号:
1464646
负责人:
Mantu Hudait
金额:
$1.15万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-04-15 至 2017-03-31

项目摘要

项目成果

Mantu Hudait的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
The mission of the proposed Next Generation Nanomaterial and Device Engineering (NGeNE) center is to develop a science, engineering, and technology base for the rational design of next generation computers, starting from their underlying material embodiments and fundamental physical principles. To build a chip for information processing, we must explore nanoscale logic and memory, photonics for high speed on-chip communication and thermal engineering to handle energy dissipation in 3D. The NGeNE center will address all these components, along with computational modeling, scientific training and education. Various industrial sectors such as the semiconductor chip industry, optoelectronics, mobile and wireless technology, energy, photonics, chemical, biological and packaging industry, as well as the civilian and defense infrastructure, healthcare and the energy sector will directly benefit from this effort. The goal of the center will be to (a) form a critical University Industry Government nexus on emerging nanotechnology, (b) carry out industry relevant research using state of the art modeling, simulation, growth, characterization, fabrication and integration of emerging nanomaterials and devices, (c) provide a competitive edge to industry and national labs by leveraging the multi-university intellectual resources for cost effective innovative solutions to their current problems, and (d) develop supporting curricula, create databases and train students and industry affiliates with the tools and knowledge infrastructure to meet their future work force requirements.The proposed center for Next Generation Nanomaterial and Device Engineering (NGeNE) aims to form a University-Industry-Government (UIG) nexus towards the design and engineering of next generation nanomaterials and devices with an emphasis on post-CMOS computing. This will rest on four pillars: Nanoelectronics and NanoMagnetism for Logic and Memory (Computation), Thermal for power management, and Photonics for on chip communication. The research thrusts span a large phase space from novel switching schemes to non-Boolean logic, beyond silicon to advanced magnetic, thermal and photonic materials. They combine physical models with computational software, compact models and architecture, heterogeneous growth and integration, nanofabrication, characterization, testing and reliability. The goal of the center will be to (a) form a critical University Industry Government nexus on emerging nanotechnology, (b) carry out industry relevant research using state of the art modeling, simulation, growth, characterization, fabrication and integration of emerging nanomaterials and devices, (c) provide a competitive edge to industry and national labs by leveraging the multi-university intellectual resources for cost effective innovative solutions to their current problems, and (d) develop supporting curricula, create databases and train students and industry affiliates with the tools and knowledge infrastructure to meet their future work force requirements.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
US-Ireland Joint R&D Partnership: Strained Engineered Germanium Quantum-Well Laser on GaAs and Si for Optical Coherence Tomography
US-Ireland R&D Partnership: Si-compatible, Strain Engineered Staggered Gap Ge(Sn)/InxGa1-xAs Nanoscale Tunnel Field Effect Transistors
EAGER: Silicon-compatible, Crystallographic Oriented Epitaxial Germanium for New Generation of Metal-oxide Semiconductor Field-effect Transistors
Collaborative: Mixed Anion and Cation Based Transistor Architecture for Ultra-Low Power Complementary Logic Applications
国内基金
海外基金
Research on Quantum Field Theory without a Lagrangian Description
  • 批准号:
    24ZR1403900
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    SATOSHI NAWATA
  • 依托单位:
Cell Research
Cell Research
Cell Research (细胞研究)