EAGER: Silicon-compatible, Crystallographic Oriented Epitaxial Germanium for New Generation of Metal-oxide Semiconductor Field-effect Transistors

EAGER：用于新一代金属氧化物半导体场效应晶体管的硅兼容、晶体取向外延锗

• 批准号: 1348653
• 负责人: Mantu Hudait
• 金额: $ 28万
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-10-01 至 2015-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1348653&HistoricalAwards=false
• 关键词: EAGER; Silicon; compatible; Crystallographic; Oriented

Objectives: The objectives of this research program is design, materials synthesis and device based co-exploration of lattice-engineered, crystallographic oriented epitaxial (100), (110) and (111) germanium (Ge) based transistors using large bandgap barrier materials. The approach is a) experimental investigation of p-channel (110)Ge and n-channel (111)Ge quantum well transistors, b) experimental investigation of high hole mobility using (110)Ge and high electron mobility using (111)Ge surface orientation, and c) silicon compatible process flow of biaxially strained Ge transistors. Intellectual merit: The key scientific merits of this proposal are: i) in-situ growth of Ge transistor structure; ii) tailor-made surface orientations of Ge enable to achieve both high-hole and high-electron mobilities; iii) biaxially strained Ge quantum well transistor using large bandgap materials to enhance hole mobility, iv) larger valence band-offsets for carrier confinement and prevents carrier spill-off, v) elimination of parallel conduction, and vi) enhancement mode transistor operation. Our approaches are most innovative and transformative of in-situ grown epitaxial surface oriented Ge with large bandgap buffers that has a capacity to bring new technologies.Broader Impact: The proposed Ge research seeks to increase the speed of transistor and substantially reduce power consumption in integrated circuits. Ultra-low power and high-speed computation will benefit applications for industrial, medical, commercial and personal use. The proposed research is interdisciplinary in nature. Through collaboration with industry, we envision direct transfer of device prototypes, to open new avenues for commercialization. The project will train graduate and undergraduate students in the area of nano-scale material science, device physics, and semiconductor fabrication

目的：该研究计划的目标是设计，材料合成和基于器件的晶格工程，晶体取向外延（100），（110）和（111）锗（Ge）基晶体管使用大带隙势垒材料的共同探索。该方法是a）p沟道（110）Ge和n沟道（111）Ge量子阱晶体管的实验研究，B）使用（110）Ge的高空穴迁移率和使用（111）Ge表面取向的高电子迁移率的实验研究，以及c）双轴应变Ge晶体管的硅兼容工艺流程。 智力优点：该方案的主要科学价值是：i）原位生长Ge晶体管结构; ii）定制Ge的表面取向使得能够实现高空穴和高电子迁移率; iii）使用大带隙材料以增强空穴迁移率双轴应变Ge量子阱晶体管，iv）用于载流子限制的较大价带偏移并防止载流子溢出，v）消除并联传导，以及vi）增强模式晶体管操作。我们的方法是最具创新性和变革性的原位生长外延表面取向的锗与大带隙缓冲区，有能力带来新technology.Broader影响：拟议的锗研究旨在提高晶体管的速度，并大大降低集成电路的功耗。超低功耗和高速计算将有利于工业，医疗，商业和个人使用的应用。拟议的研究是跨学科的性质。通过与行业合作，我们设想直接转让设备原型，为商业化开辟新途径。该项目将培养纳米材料科学、器件物理和半导体制造领域的研究生和本科生