Collaborative: Mixed Anion and Cation Based Transistor Architecture for Ultra-Low Power Complementary Logic Applications

研究目标和方法：本研究的目标是基于材料、器件和电路的混合阴离子和混合阳离子化合物半导体晶体管的节能计算的共同探索。方法是a）n通道混合阴离子的实验研究（InAsxSb 1-x）量子阱晶体管和p沟道混合阳离子（InyGa 1-ySb）晶体管，以解决互补逻辑和RF电路中的动态功耗; B）基于混合阴离子和阳离子的隧道晶体管的实验研究，以解决逻辑和嵌入式存储器电路中的待机功耗，以及c）开发设计工具包，以便使用新兴器件实现异构电路。知识产权：该提案的关键科学优点是：i）利用混合阴离子和混合阳离子锑化物材料系统中出色的电子和空穴传输特性来提供超低功率晶体管解决方案。我们研究了混合阴离子材料，InAsxSb 1-x与不同的As和Sb摩尔分数，以实现高电子迁移率（13,000 cm 2 V-1 s-1），以证明n沟道量子阱FET（QWFET）。我们探索混合阳离子材料，InyGa 1-ySb，以最大化空穴迁移率（2，000 cm 2 V-1 s-1），以实现带隙设计的p沟道QWFET;器件层设计的主要目标是实现用于n沟道和p沟道QWFET两者的公共高k电介质栅极解决方案; ii）利用混合阴离子-阳离子锑化物材料体系中交错带边排列的可用性和可调谐性，以探索具有陡峭开关特性的隧道晶体管（TFET）架构，以解决待机能耗; iii）通过使用QWFET的速度关键的高活动逻辑电路和使用隧道FET的低活动因子电路的实现来探索异构系统。这项研究将扩大我们对基于混合阴离子和混合阳离子的材料系统、新型QWFET和TFET器件配置以及高效节能逻辑元件、互连结构和嵌入式存储器的实现的材料科学的基本理解。更广泛的影响：拟议的研究直接解决了半导体行业对技术扩展和解决能源效率的长期解决方案的需求。这项研究的结果将直接影响到未来的？绿色？纳米电子学和众核处理器架构设计。基础材料、新型器件架构和节能电路的成功开发所产生的更广泛的影响，其能耗比今天降低了几个数量级？现有的电子产品可以迎来新一代的植入式医疗电子产品所需的健康监测和纳米医学应用。在整个项目过程中，主要结果将通过专门的WIKI门户网站和现有的宾夕法尼亚州立大学MRSEC相关外展渠道传播。

Research objectives and approaches: The objective of this research is materials, device and circuit based co-exploration of mixed-anion and mixed-cation compound semiconductor based transistors for energy-efficient computing. The approach is a) experimental investigation of n-channel mixed anion (InAsxSb1-x) quantum-well transistors and p-channel mixed cation (InyGa1-ySb) transistors to address dynamic power consumption in complementary logic and RF circuits; b) experimental investigation of mixed-anion and cation based tunnel transistors to address stand-by power consumption in logic and embedded memory circuits, and c) development of design toolkit to enable heterogeneous circuit implementation with emerging devices.Intellectual merit: The key scientific merits of this proposal are: i) Harnessing the excellent electron and hole transport properties in mixed-anion and mixed-cation antimonide material system to provide ultra-low power transistor solutions. We investigate mixed-anion material, InAsxSb1-x with varying As and Sb mole fraction, to achieve high electron mobility (13,000 cm2V-1s-1) to demonstrate n-channel quantum-well FETs (QWFETs). We explore mixed-cation materials, InyGa1-ySb to maximize hole mobility (2,000 cm2V-1s-1) by varying In and Ga mole fractions to enable band-gap engineered p-channel QWFETs; Device layer design is done with the primary goal of achieving a common high-k dielectric gate solution for both n-channel and p-channel QWFETs; ii) Harnessing the availability and tunability of staggered band-edge lineup in the mixed anion-cation antimonide material system to explore tunnel transistor (TFET) architecture with steep switching characteristics to address stand-by energy consumption; iii) Exploration of a heterogeneous system via implementation of speed critical, high activity logic circuits using QWFETs and low activity factor circuits using Tunnel FETs. This investigation will expand our fundamental understanding of the material science of mixed-anion and mixed-cation based material systems, novel QWFET and TFET device configurations and implementation of energy efficient logic elements, interconnect fabric and embedded memory.Broader Impact: The proposed research directly addresses the quest in the semiconductor industry for longer term solutions to technology scaling and addressing energy efficiency. The outcome of this research will have a direct impact on the future of ?green? nanoelectronics and many-core processor architecture design. A broader impact of successful development of the underlying materials, novel device architectures and energy efficient circuits with several orders of magnitude reduced energy consumption than today?s available electronics can usher in a new generation of implantable medical electronics needed for health monitoring and nanomedicine applications. Throughout the project, the key results will be disseminated via a dedicated WIKI web portal and via existing Penn State MRSEC-related outreach channels.