Collaborative: Mixed Anion and Cation Based Transistor Architecture for Ultra-Low Power Complementary Logic Applications

研究目标和方法：本研究的目标是基于材料、器件和电路的混合阴离子和混合阳离子化合物半导体晶体管的共同探索，以实现节能计算。该方法是a)n沟道混合阴离子(InAsxSb1-x)量子阱晶体管和p沟道混合阳离子(InyGa1-ysb)晶体管的实验研究，以解决互补逻辑和RF电路中的动态功耗；b)基于混合阴离子和阳离子的隧道晶体管的实验研究，以解决逻辑和嵌入式存储电路中的备用功耗，以及c)开发设计工具包，以实现与新兴器件的异质电路实现。我们研究了不同As和Sb摩尔分数的混合阴离子材料InAsxSb1-x，以获得高电子迁移率(13,000 cm2V-1s-1)，从而展示了n沟道量子势垒场效应管(QWFET)。我们探索了混合阳离子材料InyGa1-ysb，通过改变In和Ga摩尔分数来最大化空穴迁移率(2,000 cm2V-1s-1)，以实现带隙工程p沟道QWFET；完成器件层设计，主要目标是为n沟道和p沟道QWFET实现共同的高k介质栅解决方案；ii)利用混合阴离子-阳离子锑化物材料系统中交错带边阵容的可用性和可调性，探索具有陡峭开关特性的隧道晶体管(TFET)结构，以解决备用能耗；Iii)通过使用QWFET实现速度关键、高活性逻辑电路和使用隧道FET实现低活性因数电路来探索异类系统。这项研究将扩大我们对混合阴离子和混合阳离子材料系统的材料科学的基本理解，新的QWFET和TFET器件配置以及高能效逻辑元件、互连结构和嵌入式存储器的实现。广泛的影响：拟议的研究直接解决了半导体行业对技术规模和解决能源效率的长期解决方案的追求。这项研究的结果将对绿色能源的未来产生直接影响。纳米电子学和多核处理器架构设计。底层材料的成功开发、新颖的器件架构和节能电路的成功开发将带来比今天更广泛的影响吗？S可用的电子产品可以迎来健康监测和纳米医疗应用所需的新一代植入式医疗电子产品。在整个项目中，关键成果将通过一个专门的维基门户网站和宾夕法尼亚州立大学MRSEC相关的现有外联渠道传播。

Research objectives and approaches: The objective of this research is materials, device and circuit based co-exploration of mixed-anion and mixed-cation compound semiconductor based transistors for energy-efficient computing. The approach is a) experimental investigation of n-channel mixed anion (InAsxSb1-x) quantum-well transistors and p-channel mixed cation (InyGa1-ySb) transistors to address dynamic power consumption in complementary logic and RF circuits; b) experimental investigation of mixed-anion and cation based tunnel transistors to address stand-by power consumption in logic and embedded memory circuits, and c) development of design toolkit to enable heterogeneous circuit implementation with emerging devices.Intellectual merit: The key scientific merits of this proposal are: i) Harnessing the excellent electron and hole transport properties in mixed-anion and mixed-cation antimonide material system to provide ultra-low power transistor solutions. We investigate mixed-anion material, InAsxSb1-x with varying As and Sb mole fraction, to achieve high electron mobility (13,000 cm2V-1s-1) to demonstrate n-channel quantum-well FETs (QWFETs). We explore mixed-cation materials, InyGa1-ySb to maximize hole mobility (2,000 cm2V-1s-1) by varying In and Ga mole fractions to enable band-gap engineered p-channel QWFETs; Device layer design is done with the primary goal of achieving a common high-k dielectric gate solution for both n-channel and p-channel QWFETs; ii) Harnessing the availability and tunability of staggered band-edge lineup in the mixed anion-cation antimonide material system to explore tunnel transistor (TFET) architecture with steep switching characteristics to address stand-by energy consumption; iii) Exploration of a heterogeneous system via implementation of speed critical, high activity logic circuits using QWFETs and low activity factor circuits using Tunnel FETs. This investigation will expand our fundamental understanding of the material science of mixed-anion and mixed-cation based material systems, novel QWFET and TFET device configurations and implementation of energy efficient logic elements, interconnect fabric and embedded memory.Broader Impact: The proposed research directly addresses the quest in the semiconductor industry for longer term solutions to technology scaling and addressing energy efficiency. The outcome of this research will have a direct impact on the future of ?green? nanoelectronics and many-core processor architecture design. A broader impact of successful development of the underlying materials, novel device architectures and energy efficient circuits with several orders of magnitude reduced energy consumption than today?s available electronics can usher in a new generation of implantable medical electronics needed for health monitoring and nanomedicine applications. Throughout the project, the key results will be disseminated via a dedicated WIKI web portal and via existing Penn State MRSEC-related outreach channels.