Physics, Materials, and Electronic Properties of Dilute-As GaNAs Semiconductors

稀砷 GaN 半导体的物理、材料和电子特性

• 批准号: 1505122
• 负责人: Nelson Tansu
• 金额: $ 39.5万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-07-01 至 2019-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1505122&HistoricalAwards=false
• 关键词: Physics; Materials; Electronic; Properties; Dilute

Non-technical Description: The project focuses on exploring the fundamental materials properties of a new class of semiconductors for solid state lighting. One of the key barriers in current light-emitting diodes (LEDs) is a significant reduction in device efficiency when operating under high current density. The new materials based on dilute-As GaNAs offer a potential solution toward low-cost solid state lighting and high-efficiency solar cells. The project offers graduate and undergraduate students multidisciplinary research training, ranging from computational materials science, materials synthesis, to materials characterization for III-Nitride semiconductors. The outreach activities include pairing undergraduates and high-school students with Ph.D. students to perform material- and nanotechnology-based research work in the Principle Investigator's laboratory. The 'hands-on' experiences in the fields of optoelectronics and nanotechnology attract students at early stage to pursue careers in sciences and engineering. Technical Description: The project focuses on a new III-Nitride technology based on mixed As-N alloys, specifically, GaNAs. The key barrier in the conventional III-nitride system, namely InGaN, is the lack of fundamental materials understanding of the non-radiative process--referred to as the Auger process. The dilute-As GaNAs is expected to show significant reduction in the Auger process and thus could lead to high efficiency LEDs as well as other optoelectronic devices. The research tasks include thin-film epitaxy, materials characterization, computational materials science and nanostructures, and physical property characterization. The understanding of the synthesis, material physics, and electronic properties of this new material system is expected to shed light on the efficiency-droop issue in LEDs, which opens up a pathway for low-cost and high efficiency solid state lighting technology. In addition, the dilute-As GaNAs could find applications in solar cells and solar-hydrogen conversion devices because of its capability in bandgap tuning across a large spectrum range.

非技术描述：该项目专注于探索一种用于固态照明的新型半导体的基本材料特性。当前发光二极管(LED)的关键障碍之一是在高电流密度下工作时器件效率显著降低。基于稀释型GaAs的新材料为低成本固态照明和高效太阳能电池提供了一种潜在的解决方案。该项目为研究生和本科生提供多学科研究培训，范围从计算材料科学、材料合成到III-氮化物半导体的材料表征。外展活动包括将本科生和高中生与博士生配对，在首席研究员的实验室进行基于材料和纳米技术的研究工作。在光电子和纳米技术领域的实践经验吸引了早期阶段的学生在科学和工程领域追求职业生涯。技术描述：该项目专注于一种新的III-氮化物技术，该技术基于混合As-N合金，特别是GaAs。传统的III-氮化物系统，即InGaN的关键障碍是缺乏对非辐射过程--称为俄歇过程--的基本材料的了解。稀释型GaAs预计将在俄歇工艺中显著减少，从而可能导致高效率LED和其他光电子器件。研究任务包括薄膜外延、材料表征、计算材料科学和纳米结构以及物理性质表征。对这种新材料体系的合成、材料物理和电学性质的了解有望为解决LED的效率下降问题提供线索，从而为低成本、高效率的固态照明技术开辟一条道路。此外，稀释型GaNas还可以在太阳能电池和太阳能-氢转换设备中得到应用，因为它可以在很大的光谱范围内进行带隙调节。