Nanostructure Engineering of III-Nitride Active Regions for High-Performance Visible Emitters and Lasers
Nanostructure Engineering of III-Nitride Active Regions for High-Performance Visible Emitters and Lasers
批准号:
0701421
负责人:
Nelson Tansu
金额:
$26.98万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-07-01 至 2011-06-30
中文摘要
本研究的目标强调的物理和优化的新型III-氮化物为基础的纳米结构的有源区,以实现高性能的发光二极管(LED)和激光器发射的蓝色和绿色制度。新型氮化物基纳米结构的纳米结构工程允许偏振带工程,用于增强辐射复合率和光学增益,并工程化纳米结构的电子态密度。在本计划中,PI将重点研究以下纳米结构:1)交错I型InGaN量子阱,2)II型氮化物基量子阱,3)InGaN基量子点有源区。拟议的研究工作包括纳米结构物理,器件物理,外延,材料表征,器件制造,以及在可见光区发射的LED和激光二极管的优化。智力优势 该研究计划将通过纳米结构工程推进改进的新型氮化物基有源区的基础物理,器件物理和MOCVD外延。对具有显著改善的自发复合率的III族氮化物有源区的纳米结构工程的成功研究允许实现在蓝色和绿色区域中操作的高效率LED,适用于固态照明。所提出的纳米结构还导致基于氮化物的有源区在蓝色和绿色区域中具有改善的光学增益,从而使得能够实现在蓝色和绿色区域中发射的高性能激光二极管。更广泛的影响 这些研究项目在固态照明,能源和生物医学激光领域具有强大的技术影响。低成本和高效率的可见光固态发射器导致能量的有效利用,这将为社会提供显著的节能。该研究计划允许研究生和本科生在多学科研究领域接受培训,包括光电子器件和纳米结构的物理学,MOCVD外延和器件设计/制造。此外,在研究生的指导下,还鼓励高中生在夏季学期参与研究。还将开展以K-12(5年级至9年级和初中)女生和代表性不足的少数民族学生为重点的外联方案,以提高他们对科学和工程的兴趣。
英文摘要
The objectives of this research emphasize on the physics and optimization of novel III-Nitride based nanostructures active regions for achieving high performance light emitting diodes (LEDs) and lasers emitting in the blue and green regimes. Nanostructure engineering of the novel nitride-based nanostructures allow polarization band engineering for enhancing the radiative recombination rate and optical gain, and engineering the electronic density of states of the nanostructures. In this program, the PI will emphasize on the investigation of the following nanostructures: 1) staggered type-I InGaN QW, 2) type-II nitride-based QWs, and 3) InGaN-based QDs active regions. The proposed research works include physics of nanostructures, device physics, epitaxy, material characterization, device fabrication, and optimization of LEDs and laser diodes emitting in the visible regimes. Intellectual Merits The research program will advance the fundamental physics, device physics, and MOCVD epitaxy of improved novel nitride-based active regions via nanostructure engineering. Successful research on the nanostructure engineering of III-Nitride active region with significantly improved spontaneous recombination rate allows the realization of high efficiency LEDs operating in the blue and green regimes, applicable for solid state lightings. The proposed nanostructures also leads to nitride-based active regions with improved optical gain in the blue and green regimes, thus enabling the realization of high performance laser diodes emitting in blue and green regimes. Broader Impacts The research programs have strong technological impacts in the fields of solid state lightings, energy, and biomedical lasers. Low-cost and high-efficiency visible solid state emitters lead to efficient use of energy, which will provide a significant saving in energy consumption for the society. This research program allows graduate and undergraduate students to be trained in multidisciplinary research areas, encompassing the physics of optoelectronics devices and nanostructures, MOCVD epitaxy, and device design / fabrications. In addition, research participation from high school students is also encouraged during summer semesters, under guidance of graduate students. Outreach program focusing on K-12 (grade 5th till 9th and junior) female and underrepresented minority students will also be conducted to raise their interest in science and engineering.
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会议论文
Physics, Materials, and Electronic Properties of Dilute-As GaNAs Semiconductors
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批准号:1505122
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财政年份:2009
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依托单位:
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依托单位:
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