Valence Subband Engineering in High Al-content AlGaN Quantum Wells Active Regions for Deep Ultraviolet Lasers and Emitters

深紫外激光器和发射器高铝含量 AlGaN 量子阱活性区的价子带工程

• 批准号: 1408051
• 负责人: Nelson Tansu
• 金额: $ 38.59万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-06-01 至 2018-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1408051&HistoricalAwards=false
• 关键词: Valence; Subband; Engineering; Al; content

The objective of this research is to conduct comprehensive studies on the issues and solutions to achieve high performance III-Nitride deep ultraviolet (UV) light-emitting diodes (LEDs) and lasers emitting in the 240-300 nm regime. The research will lead to electrically-injected deep UV emitters applicable for homeland security, water purification, environmental sensing, and biochemical agent detection. The program allows graduate and undergraduate students to be trained in multidisciplinary research, encompassing the physics of semiconductor optoelectronics materials and devices, material physics and epitaxy, semiconductor nanostructures, and device design and fabrications. The program will enable the training for two PhD students in III-Nitride technologies, which is critical for both deep UV emitters and solid state lighting applications. The approach pursued in this program is to exploit a new method by introducing a nanoscale layer to achieve valence subband arrangement in the active regions, which will result in improved optical gain and spontaneous emission rate, as well as the ability to control the polarization of the emission in the mid and deep UV spectral regimes. The material development and epitaxy of novel AlGaN-based and AlInN-based quantum wells with large optical gain, specifically for achieving high performance deep UV LEDs and lasers, will be pursued. The implementation of these novel quantum wells in device structures will be pursued for achieving high-performance electrically-injected III-Nitride deep UV emitters.

这项研究的目的是对实现高性能III-氮化物深紫外光发光二极管(LED)和在240-300 nm区域发射的激光的问题和解决方案进行全面研究。这项研究将导致电注入深紫外光发射器适用于国土安全、水净化、环境传感和生化试剂检测。该项目允许研究生和本科生接受多学科研究方面的培训，包括半导体光电子材料和器件的物理、材料物理和外延、半导体纳米结构以及器件设计和制造。该计划将为两名博士生提供III-氮化物技术方面的培训，这对深紫外发射器和固态照明应用都是至关重要的。这一计划所追求的方法是开发一种新的方法，通过引入纳米级的层来实现有源区的价子带排列，这将导致改善光增益和自发辐射速率，以及在中、深紫外区控制发射的偏振的能力。为了实现高性能的深紫外光LED和激光器，将致力于新型AlGaN基和AlInN基具有大光学增益的量子阱的材料开发和外延。在器件结构中实现这些新颖的量子阱将是实现高性能电注入III-氮化物深紫外光发射器的基础。