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Novel Approaches for High Efficiency Droop-Free III-Nitride Light-Emitting Diodes in Solid State Lighting

Novel Approaches for High Efficiency Droop-Free III-Nitride Light-Emitting Diodes in Solid State Lighting
固态照明中高效无下垂 III 族氮化物发光二极管的新方法
批准号:
1028490
负责人:
Nelson Tansu
金额:
$35.18万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-09-01 至 2014-08-31

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中文摘要
翻译
该研究计划的目标是对实现适用于节能固态照明技术的高效率和高功率III-氮化物发光二极管(LED)所面临的挑战和解决方案进行全面研究。为了抑制InGaN量子阱(QW)发光二极管的效率下降,本方案采用了新颖的InGaN-Alinn量子阱设计。将对InGaN-Alinn量子阱LED进行模拟研究、外延、器件制作和器件物理分析,目标是实现在高电流密度下工作的无下垂LED。这些目标将导致在450-550 nm光谱范围内发射的大功率氮化物LED的变革性进步。智能优点该研究计划将推进用于固态照明的新型无下垂InGaN基量子阱LED的器件物理和MOCVD外延。该研究计划将导致氮化物LED效率下降现象的主要机制的识别,以及通过使用新的有源区来抑制该现象的解决方案。这项变革性的研究将导致实现低成本、高功率的III-氮化物LED,能够工作到非常高的电流密度。更广泛的影响这些研究计划在固态照明和节能技术领域产生了强大的影响。无下垂器件的出现将导致低成本固态照明技术的出现。该研究项目允许研究生和本科生在多学科研究领域进行培训,包括光子学和纳米结构器件、外延和器件技术。此外,还将开展以女性和代表性不足的少数族裔学生为重点的高中外展计划,以激发他们追求科学和工程事业的兴趣。
英文摘要
The objectives of this research program is to perform comprehensive studies on the challenges and solutions to achieve high-efficiency and high-power III-Nitride light-emitting diodes (LEDs) applicable for energy-efficient solid state lighting technologies. The approach pursued in this program to suppress the efficiency-droop in InGaN quantum well (QW) LEDs is by employing novel InGaN-AlInN QW design. Simulation studies, epitaxy, device fabrication, and device physics analysis of InGaN-AlInN QW LEDs will be carried out with the goal for realizing droop-free LEDs operating at high current density. These objectives will result in transformational advances in high-power nitride LEDs emitting in 450-550 nm spectral range. Intellectual Merits The research program will advance the device physics and MOCVD epitaxy of novel droop-free InGaN-based quantum well LEDs for solid state lighting. The research program will lead to the identification of dominant mechanisms in efficiency-droop phenomenon in nitride LEDs, as well as the solution by using novel active region for suppressing the droop phenomenon. The transformational research will lead to realization low-cost high-power III-Nitride LEDs capable of operating up to very high current density. Broader Impacts The research programs have strong impacts in the fields of solid state lighting and energy-efficient technologies. The availability of droop-free devices will lead to low-cost solid state lighting technologies. The research program allows graduate and undergraduate students training in multidisciplinary research areas, encompassing photonics and nanostructure devices, epitaxy, and device technologies. In addition, high school outreach program with emphasis on female and underrepresented minority students will be conducted to stimulate their interest to pursue career in science and engineering.
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Physics, Materials, and Electronic Properties of Dilute-As GaNAs Semiconductors
  • 批准号:
    1505122
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $39.5万
  • 财政年份:
    2015
  • 负责人:
    Nelson Tansu
  • 依托单位:
Valence Subband Engineering in High Al-content AlGaN Quantum Wells Active Regions for Deep Ultraviolet Lasers and Emitters
  • 批准号:
    1408051
  • 项目类别:
    Standard Grant
  • 资助金额:
    $38.59万
  • 财政年份:
    2014
  • 负责人:
    Nelson Tansu
  • 依托单位:
Growths of High In-Content InGaN and InN Semiconductors for Energy Applications
  • 批准号:
    0907260
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $32.96万
  • 财政年份:
    2009
  • 负责人:
    Nelson Tansu
  • 依托单位:
Nanostructure Engineering of III-Nitride Active Regions for High-Performance Visible Emitters and Lasers
  • 批准号:
    0701421
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $26.98万
  • 财政年份:
    2007
  • 负责人:
    Nelson Tansu
  • 依托单位:
国内基金
海外基金
Lagrangian origin of geometric approaches to scattering amplitudes
  • 批准号:
    24ZR1450600
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    ALEXANDER OCHIROV
  • 依托单位: