Novel Approaches for High Efficiency Droop-Free III-Nitride Light-Emitting Diodes in Solid State Lighting

固态照明中高效无下垂 III 族氮化物发光二极管的新方法

• 批准号: 1028490
• 负责人: Nelson Tansu
• 金额: $ 35.18万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1028490&HistoricalAwards=false
• 关键词: Novel; Approaches; Efficiency; Droop; Free

The objectives of this research program is to perform comprehensive studies on the challenges and solutions to achieve high-efficiency and high-power III-Nitride light-emitting diodes (LEDs) applicable for energy-efficient solid state lighting technologies. The approach pursued in this program to suppress the efficiency-droop in InGaN quantum well (QW) LEDs is by employing novel InGaN-AlInN QW design. Simulation studies, epitaxy, device fabrication, and device physics analysis of InGaN-AlInN QW LEDs will be carried out with the goal for realizing droop-free LEDs operating at high current density. These objectives will result in transformational advances in high-power nitride LEDs emitting in 450-550 nm spectral range. Intellectual Merits The research program will advance the device physics and MOCVD epitaxy of novel droop-free InGaN-based quantum well LEDs for solid state lighting. The research program will lead to the identification of dominant mechanisms in efficiency-droop phenomenon in nitride LEDs, as well as the solution by using novel active region for suppressing the droop phenomenon. The transformational research will lead to realization low-cost high-power III-Nitride LEDs capable of operating up to very high current density. Broader Impacts The research programs have strong impacts in the fields of solid state lighting and energy-efficient technologies. The availability of droop-free devices will lead to low-cost solid state lighting technologies. The research program allows graduate and undergraduate students training in multidisciplinary research areas, encompassing photonics and nanostructure devices, epitaxy, and device technologies. In addition, high school outreach program with emphasis on female and underrepresented minority students will be conducted to stimulate their interest to pursue career in science and engineering.

该研究计划的目标是对挑战和解决方案进行全面研究，以实现适用于节能固态照明技术的高效率和高功率III族氮化物发光二极管（LED）。在这个计划中所追求的抑制InGaN量子阱（QW）LED中的效率下降的方法是通过采用新颖的InGaN-AlInN QW设计。InGaN-AlInN量子阱LED的模拟研究、外延、器件制造和器件物理分析将以实现在高电流密度下工作的无下垂LED为目标进行。这些目标将导致在450-550 nm光谱范围内发射的高功率氮化物LED的变革性进展。智力优势 该研究计划将推进用于固态照明的新型无下垂InGaN基量子阱LED的器件物理和MOCVD外延。该研究计划将导致识别氮化物LED中效率下降现象的主要机制，以及通过使用新型有源区来抑制下降现象的解决方案。转型研究将导致实现低成本高功率III族氮化物LED，能够在非常高的电流密度下工作。更广泛的影响 这些研究项目在固态照明和节能技术领域具有很强的影响力。无下垂器件的可用性将导致低成本的固态照明技术。该研究计划允许研究生和本科生在多学科研究领域进行培训，包括光子学和纳米结构器件，外延和器件技术。此外，将开展高中外展计划，重点是女性和代表性不足的少数民族学生，以激发他们追求科学和工程事业的兴趣。