GOALI: Study of Next-generation Nanopatterned Magnetic Memory Devices

根据摩尔定律，电子元件的小型化已接近尾声。正在探索不同的方法来持续改进计算性能。 技术目前正处于从基于电荷的设备到自旋电子学的范式转变的开始，在自旋电子学中，电子自旋用于传输和存储信息。最终，计算机芯片的所有主要元件（逻辑、内存、数据存储）都可能基于磁性，从而解决当前最紧迫的挑战，如功耗和互连延迟。 具体地，自旋转移矩随机存取存储器正在被大力追求以在不久的将来取代传统的半导体技术。然而，迫切需要降低切换存储器元件的状态所需的电流，以便实现全部商业潜力。拟议的研究将通过研究和优化这些纳米图案化元件的材料特性来解决这些挑战，这些纳米图案化元件对于作为存储元件的操作至关重要。 三星和UC-Santa Cruz之间的密切合作为各级学生提供了在工业环境中接受培训的绝佳机会。该项目还确保将研究成果快速转化为原型，并最终将使用纳米磁性阵列的存储器产品商业化。其他推广活动包括本科生实习，以及三星研究人员在加州大学圣克鲁斯的客座讲座。加州大学圣克鲁斯分校和三星半导体之间的这一合作项目旨在研究和优化决定下一代磁存储器件性能的关键材料参数。三星在器件设计和制造方面的专业知识和加州大学圣克鲁斯的超快磁光特性将结合起来，以了解，控制和最大限度地减少纳米磁性元件的阻尼，这将构成高密度的商业产品。到项目结束时，将获得对材料选择、工艺条件和样品几何形状如何影响阻尼的完整理解。单纳米磁体和纳米磁体阵列将被研究的目标是能够控制吉尔伯特阻尼在一个单一的纳米磁体下施加的偏置，并了解各种机械和磁性元件间的相互作用在一个单一的元素的行为的阵列的影响。

According to Moore's Law, miniaturization of electronic components is nearing its end. Different approaches are being explored to continued improvement of computing performance. Technology is currently at the beginning of a paradigm shift from charge-based devices to spintronics where the electron spin is used to transport and store information. Eventually, all major elements of a computer chip (logic, memory, data storage) may be based on magnetism, addressing some of the most pressing current challenges such as power consumption and interconnect delays. Specifically, spin transfer torque random access memory is being vigorously pursued to replace conventional semiconductor technology in the near future. However, a reduction of the current required to switch the state of a memory element is urgently needed in order to realize the full commercial potential. The proposed research will address these challenges by studying and optimizing the material properties of these nanopatterned elements that are critical for operation as a memory element. The close collaboration between Samsung and UC-Santa Cruz provides an excellent opportunity for students at all levels to be trained in an industrial environment. The project also ensures rapid translation of the research results into prototypes and, ultimately, commercialization of memory products using nanomagnetic arrays. Other outreach activities include internships for undergraduates, and guest lectures from Samsung researchers at UC Santa Cruz. This collaborative project between UC Santa Cruz and Samsung Semiconductor aims at studying and optimizing the critical material parameters that determine the performance of next-generation magnetic memory devices. The expertise in device design and fabrication at Samsung and ultrafast magneto-optical characterization at UC Santa Cruz will be combined in order to understand, control, and minimize damping in nanomagnetic elements that will make up high-density commercial products. By the end of the project, a complete understanding of how material choice, process conditions, and sample geometry affect damping will have been gained. Both single nanomagnets and nanomagnet arrays will be studied with the goal of being able to control Gilbert damping in a single nanomagnet under applied bias and to understand the influence of various mechanical and magnetic inter-element interactions in an array on the behavior of a single element.