GOALI: Study of Next-generation Nanopatterned Magnetic Memory Devices

根据摩尔定律，电子元件的微型化已接近尾声。人们正在探索不同的方法来持续改进计算性能。目前，技术正处于从基于电荷的设备到自旋电子学的范式转变的开端，自旋电子学利用电子自旋来传输和存储信息。最终，计算机芯片的所有主要元素（逻辑、内存、数据存储）都可能以磁性为基础，解决当前一些最紧迫的挑战，如功耗和互连延迟。具体来说，自旋转移扭矩随机存取存储器在不久的将来将取代传统的半导体技术。然而，为了充分实现其商业潜力，迫切需要减少转换存储元件状态所需的电流。提出的研究将通过研究和优化这些纳米化元件的材料特性来解决这些挑战，这些纳米化元件对于作为存储元件的操作至关重要。三星与加州大学圣克鲁兹分校的密切合作为各级学生提供了在工业环境中接受培训的绝佳机会。该项目还确保将研究成果快速转化为原型，并最终实现使用纳米磁阵列的存储产品的商业化。其他拓展活动包括本科生实习，以及加州大学圣克鲁兹分校三星研究人员的客座讲座。加州大学圣克鲁兹分校和三星半导体之间的这个合作项目旨在研究和优化决定下一代磁存储设备性能的关键材料参数。三星在设备设计和制造方面的专业知识，以及加州大学圣克鲁斯分校的超快磁光特性，将被结合起来，以理解、控制和最小化纳米磁元件的阻尼，这些纳米磁元件将构成高密度的商业产品。在项目结束时，将获得对材料选择、工艺条件和样品几何形状如何影响阻尼的完整理解。我们将研究单纳米磁体和纳米磁体阵列，目的是能够在施加偏压的情况下控制单个纳米磁体中的吉尔伯特阻尼，并了解阵列中各种机械和磁性元件间相互作用对单个元件行为的影响。

According to Moore's Law, miniaturization of electronic components is nearing its end. Different approaches are being explored to continued improvement of computing performance. Technology is currently at the beginning of a paradigm shift from charge-based devices to spintronics where the electron spin is used to transport and store information. Eventually, all major elements of a computer chip (logic, memory, data storage) may be based on magnetism, addressing some of the most pressing current challenges such as power consumption and interconnect delays. Specifically, spin transfer torque random access memory is being vigorously pursued to replace conventional semiconductor technology in the near future. However, a reduction of the current required to switch the state of a memory element is urgently needed in order to realize the full commercial potential. The proposed research will address these challenges by studying and optimizing the material properties of these nanopatterned elements that are critical for operation as a memory element. The close collaboration between Samsung and UC-Santa Cruz provides an excellent opportunity for students at all levels to be trained in an industrial environment. The project also ensures rapid translation of the research results into prototypes and, ultimately, commercialization of memory products using nanomagnetic arrays. Other outreach activities include internships for undergraduates, and guest lectures from Samsung researchers at UC Santa Cruz. This collaborative project between UC Santa Cruz and Samsung Semiconductor aims at studying and optimizing the critical material parameters that determine the performance of next-generation magnetic memory devices. The expertise in device design and fabrication at Samsung and ultrafast magneto-optical characterization at UC Santa Cruz will be combined in order to understand, control, and minimize damping in nanomagnetic elements that will make up high-density commercial products. By the end of the project, a complete understanding of how material choice, process conditions, and sample geometry affect damping will have been gained. Both single nanomagnets and nanomagnet arrays will be studied with the goal of being able to control Gilbert damping in a single nanomagnet under applied bias and to understand the influence of various mechanical and magnetic inter-element interactions in an array on the behavior of a single element.