EAGER: Black Phosphorus For Tunable Wide Bandwidth Sensor Arrays

摘要：用于可调宽带宽传感器阵列的黑磷纳米碳在过去的几十年里吸引了研究人员的注意，如七叶树球，碳纳米管，碳纳米纤维和石墨烯。 这种丰富多样的纳米碳选择是可能的，这是由于纳米碳的不同晶体结构，其中一种形式是二维（2D）石墨烯，一种层状材料。二维石墨烯使研究人员能够探索其他二维层状材料，如过渡金属二硫属化物，各种氧化物和氮化物以及粘土。 除了碳之外，最近添加到这组材料中的是磷，其在固态下的结构也显示出极大的多样性，范围从正交黑磷、立方白色磷、单斜紫磷、纤维状赤磷和无定形赤磷。最近，人们对磷的层状形式，特别是具有独特的褶皱蜂窝晶格的黑磷，给予了很大的关注。然而，与石墨不同，黑磷是一种直接带半导体，使其成为光电子和传感应用的有吸引力的材料。 本文提出的工作重点是了解黑磷的有趣的电子和光电特性，并从这种材料开发新型光电传感器件。黑磷在本体中具有0.3eV的窄的直接带隙，不像大多数过渡金属二硫属化物具有高得多的间接带隙，这表明黑磷具有针对近红外和中红外制度的传感和检测器应用的前景。 此外，黑磷的带隙可以通过控制层厚度来设计;带隙随着层数的减少而增加，单层磷的带隙达到2 eV。因此，在具有不同层数的黑磷器件阵列中设计层数应该能够实现宽光谱范围内的光检测。 我们将利用黑磷的奇异特性，并将这种新型材料与二硫化钼（MoS 2）相结合，以展示从可见光到红外（IR）的宽光谱范围内可操作的高性能可调传感器阵列。 该提案的新颖特征是利用黑磷的可调带隙特性、其载流子的高迁移率以实现快速响应时间检测器，并且同时，二维（2D）货车德瓦尔斯异质结构之间的原子级尖锐界面应通过减少困扰掺杂渐变结的性能的暗电流来产生超灵敏的检测器。

Abstract: Black Phosphorus for Tunable Wide-bandwidth Sensor ArraysNanocarbons have captured the attention of researchers over the past several decades with materials such as buckeyballs, carbon nanotubes, carbon nanofibers and graphene. This rich variety of nanocarbon choices is possible due to the diverse crystalline structures of nancarbons, one form of which is two-dimensional (2D) graphene, a layered material. Two-dimensional graphene has enabled researchers to explore other 2D layered materials, such as the transition metal dichalcogenides, a wide variety of oxides and nitrides and clays. A recent addition to the suite of materials beyond carbon is phosphorus which also shows great diversity in its structures in the solid state, ranging from orthorhombic black phosphorus, cubic white phosphorus, monoclinic violet phosphorus, fibrous red phosphorus and amorphous red phosphorus. Recently, a great deal of attention has been paid to the layered form of phosphorus, specifically black phosphorus which has a unique puckered honeycomb lattice. However, unlike graphite, black phosphorus is a direct band semiconductor in the bulk making it an attractive material for optoelectronics and sensing applications. The focus of the work proposed here is to understand the intriguing electronic and optoelectronic properties of black phosphorous and to develop novel optoelectronic sensing devices from this material. Black phosphorus has a narrow direct band gap of 0.3 eV in the bulk, unlike most of the transition metal dichalcogenides which have much higher, indirect band gaps, suggesting that black phosphorus has prospects for sensing and detector applications targeted for the near IR and mid-IR regimes. Moreover, the band gap of black phosphorus can be engineered through control of layer thickness; the band gap increases with decreasing layer number, reaching 2 eV for single layer phosphorene. Therefore, engineering the layer number in arrays of black phosphorus devices with varying layer number should enable photo-detection over a broad spectral range. We will utilize the exotic properties of black phosphorus and integrate this novel material with molybdenum disulphide (MoS2) to demonstrate high performance tunable sensor arrays operational over a wide spectral regime from the visible to the infrared (IR). The novel features of this proposal are to capitalize on the tunable band gap properties of black phosphorus, the high mobility of its carriers to enable fast response time detectors, and at the same time, the atomically sharp interfaces between two-dimensional (2D) van der Waals heterostructures should yield ultra-sensitive detectors by reducing dark currents that plague the performance of doped-graded junctions.