EFRI 2-DARE: From Atoms to Devices: Pathways to Atomic Layer Optoelectronics via Multi-Scale Imaging and Spectroscopy

EFRI 2-DARE：从原子到设备：通过多尺度成像和光谱学通往原子层光电子学的途径

• 批准号: 1542747
• 负责人: Xiaoqin Li
• 金额: $ 200万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-09-15 至 2020-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1542747&HistoricalAwards=false
• 关键词: EFRI; DARE; Atoms; Devices; Pathways

EFMA - 1542747PI: Li, XiaoqinTwo-dimensional atomic layers are versatile building blocks for forming novel optoelectronic devices. The goals of this project are to synthesize high-quality, atomically thin material layers using several techniques, measure the properties of the layers using several spectroscopic methods, and assemble the layers to form a variety of prototype optoelectronic devices. The project will explore how two-dimensional layered materials can be integrated into current silicon-based technology, which could result in innovative devices and improvements in existing devices. Calculations will be carried out to predict material properties and guide device development. The project will generate a database of material properties for atomic layer materials that will be made available to other researchers and practitioners in the field. The investigators will use the project as a platform to provide new research opportunities at their institutions and at surrounding institutions, including community colleges. In addition, they will develop a new course for graduate students titled "Frontier in Optoelectronics based on Atomically Thin Materials: Device and Material Science." The goals of this project are to demonstrate a few novel optoelectronic devices made possible by two-dimensional materials and to systematically improve their performance through a synergistic effort on device fabrication and testing, calculations, material synthesis, and characterization. The project includes the following coordinated activities: (i) design, fabricate, and test prototypical devices that include injection lasers, photodetectors, and single photon sources; (ii) synthesize high quality atomically thin materials and heterojunctions using molecular beam epitaxy, chemical vapor deposition, and layer transfer techniques; (iii) guide device development and predict material properties using first-principles calculations; and (iv) characterize materials properties using a wide range of imaging and spectroscopy tools with atomic to mesoscopic spatial resolution and ultrafast temporal resolution using scanning tunneling microscopy and spectroscopy, microwave impedance microscopy and ultrafast optical spectroscopy. The project aims to address important challenges in device fabrication, including overcoming the thin interaction region in optoelectronic devices, limiting defect density during growth, and understanding how defects, doping, stacking and photonic cavities change band structure, transport and optical properties of two-dimensional materials.

EFMA -1542747 PI：Li，Xiaoqin二维原子层是用于形成新型光电器件的通用构建块。 该项目的目标是使用多种技术合成高质量的原子级薄材料层，使用多种光谱方法测量层的特性，并组装层以形成各种原型光电器件。 该项目将探索如何将二维层状材料集成到当前的硅基技术中，从而产生创新设备和改进现有设备。 将进行计算以预测材料特性并指导器械开发。 该项目将生成一个原子层材料的材料属性数据库，供该领域的其他研究人员和从业人员使用。 研究人员将利用该项目作为一个平台，在他们的机构和周围的机构，包括社区学院提供新的研究机会。 此外，他们还将为研究生开发一门新课程，名为“基于原子薄材料的光电子学前沿：器件和材料科学”。“该项目的目标是展示一些由二维材料制成的新型光电器件，并通过器件制造和测试，计算，材料合成和表征的协同努力系统地提高其性能。 该项目包括以下协调活动：（一）设计、制造和测试原型器件，包括注入激光器、光电探测器和单光子源;（二）利用分子束外延、化学气相沉积和层转移技术合成高质量原子级薄材料和异质结;（三）利用第一性原理计算指导器件开发和预测材料特性;以及（iv）使用扫描隧道显微镜和光谱学、微波阻抗显微镜和超快光学光谱学，使用具有原子到介观空间分辨率和超快时间分辨率的广泛的成像和光谱学工具来表征材料性质。 该项目旨在解决器件制造中的重要挑战，包括克服光电器件中的薄相互作用区域，限制生长过程中的缺陷密度，以及了解缺陷，掺杂，堆叠和光子腔如何改变二维材料的能带结构，传输和光学特性。