Collaborative Research: Development of Optoelectronic Devices for the Far-Infrared

合作研究：远红外光电器件的开发

• 批准号: 1609912
• 负责人: Daniel Wasserman
• 金额: $ 21.65万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-08-15 至 2020-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1609912&HistoricalAwards=false
• 关键词: Collaborative; Research; Development; Optoelectronic; Devices

Title: Development of Optoelectronic Devices for the Far-InfraredGeneral Abstract: The objective of this research effort is to develop optical materials and devices that control and emit far-infrared (far-IR) light with wavelengths between 20-60microns. There are a number of important applications for light in this wavelength range, ranging from imaging for astronomy and cosmology efforts and sensing of aromatic hydrocarbons, asphaltenes, and biological materials. However, the far-IR is an extremely challenging wavelength range to work in, with little to no optical infrastructure for either conducting fundamental research or developing optical devices and systems, making the far-IR arguably one of the few remaining frontiers of the electromagnetic spectrum. The challenges of the far-IR largely stem from the lattice vibrations (phonons) of most of the semiconductors used for optoelectronic devices across the electromagnetic spectrum. In the far-IR, phonons strongly absorb light and conventional device designs are no longer appropriate. In this program we will look to harness these lattice vibrations and utilize them to generate electromagnetic radiation, or light. In doing so, we will develop an architecture for engineering designer far-IR materials and emitters that incorporate unique light-matter interactions in an oft-neglected portion of the optical spectrum, resulting in an optical toolkit for the far-IR and a new generation of optical devices. At the same time, we will undertake both educational and outreach efforts, as well as a coherent effort to grow the visibility and impact of far-IR optoelectronics research, which has no agreed-upon dissemination systems (journals, conferences, workshops), commercial vendors, or even nomenclature. Technical Abstract: Technological developments over the past several decades have significantly increased our ability to generate, control, and detect electromagnetic (EM) radiation across an ever-increasing range of wavelengths. Much of this progress has been spurred by the rapid growth of semiconductor optoelectronic technologies. Yet the far-infrared (far-IR, 20-60 ìm) wavelength range has not shared in this explosive growth. Ironically, a primary reason for the lack of progress in the far-IR lies in the semiconductor crystal lattice itself: characteristic vibrations of the lattice, known as phonons, interact strongly with far-IR light and result in strong optical absorption. This program aims to explore and develop a set of technologies, materials, and phenomena which will serve as the technical foundation of an optical infrastructure for the largely undeveloped far-IR wavelength range. In particular, we propose to develop optical materials and opto-phononic-electronic (OPE) devices that control and emit far-IR light by engineering electronic transport, surface waves, and the interaction of these surface waves with bulk optical phonons. In doing so, we will develop an architecture for engineering designer far-IR materials and OPE emitters that incorporate unique light-matter interactions in an oft-neglected portion of the optical spectrum, resulting in an optical toolkit for the far-IR and a new generation of optical devices. Concurrent with the technical thrusts of the proposed effort, we will: i) bring STEM-based activities into K12 classrooms and after-school programs and ii) work to cultivate an intellectual community with a shared interest in the far-IR by means of virtual communities and special issues in peer-reviewed publications.

摘要：本研究的目的是开发控制和发射波长在20-60微米之间的远红外（far-IR）光的光学材料和器件。在这个波长范围内，光有许多重要的应用，从天文学和宇宙学的成像，到芳香烃、沥青质和生物材料的传感。然而，远红外线是一个极具挑战性的波长范围，几乎没有光学基础设施用于进行基础研究或开发光学设备和系统，这使得远红外线可以说是电磁频谱中为数不多的前沿之一。远红外线的挑战很大程度上源于大多数用于电磁频谱光电子器件的半导体的晶格振动（声子）。在远红外波段，声子强烈吸收光，传统的器件设计不再适用。在这个程序中，我们将利用这些晶格振动并利用它们产生电磁辐射或光。在此过程中，我们将为工程设计远红外材料和发射器开发一种架构，该架构将独特的光-物质相互作用纳入光谱中经常被忽视的部分，从而产生用于远红外和新一代光学设备的光学工具包。与此同时，我们将承担教育和推广工作，以及一致的努力，以提高远红外光电子研究的知名度和影响，这没有商定的传播系统（期刊，会议，研讨会），商业供应商，甚至命名。技术摘要：过去几十年的技术发展显著提高了我们产生、控制和探测波长范围不断扩大的电磁辐射的能力。这种进步很大程度上是由半导体光电技术的快速发展所推动的。然而远红外（far-IR, 20-60 ìm）波长范围并没有分享到这种爆炸性的增长。具有讽刺意味的是，在远红外线方面缺乏进展的一个主要原因在于半导体晶格本身：晶格的特征振动，称为声子，与远红外线强烈相互作用，导致强烈的光学吸收。该计划旨在探索和开发一套技术、材料和现象，这些技术、材料和现象将作为主要未开发的远红外波长范围的光学基础设施的技术基础。特别是，我们建议开发光学材料和光声子电子（OPE）器件，通过工程电子输运，表面波以及这些表面波与体光学声子的相互作用来控制和发射远红外光。在此过程中，我们将为工程设计远红外材料和OPE发射器开发一种架构，该架构将独特的光物质相互作用纳入光谱中经常被忽视的部分，从而形成用于远红外和新一代光学设备的光学工具包。在提出技术重点的同时，我们将：i)将基于stem的活动引入K12教室和课后项目；ii)通过虚拟社区和同行评审出版物的特殊问题，努力培养一个对远红外有共同兴趣的知识分子社区。