SHF: SMALL: Multiphysics Simulation Algorithms and Experimental Methods for the Development of Cu/Graphene/TMD Hybrid Interconnect Solution

随着集成电路（IC）向更精细的特征尺寸和更高的集成度发展，互连已成为IC技术发展中的主要挑战。迄今为止开发的各种互连解决方案由于其在性能上的限制和/或在制造上的困难而还不能替代铜（Cu）互连。在这个项目中，新型铜，石墨烯，过渡金属二硫属化物（TMD）混合互连将通过模拟和实验来展示和探索，它可以与相同尺寸的Cu纳米线竞争，同时有可能成为最终的互连解决方案。参与这项工作的学生将接受广泛的技能培训，以维持未来的纳米技术进步。教育和外展活动，如包容性课程和文化相关的教学，纳米日在伯克纳米技术中心在普渡大学，也正在开发，积极吸引妇女和代表性不足的少数民族进入科学和工程。发生在铜/石墨烯/TMD互连的整个物理过程尚未得到充分理解。挑战是要了解复杂的多物理现象之间的相互作用，涉及电路，电磁学，材料，电子传输和热扩散在一个宽频带的频率。实验上，一个快速的低温过程是至关重要的，以保持沉积过程中的铜纳米线的结构完整性，并将进行研究。为了克服上述挑战，将追求多物理场模拟算法和实验方法。在实验方面，将开发低温化学气相沉积配方，沿着等离子体增强工艺。将进行电和热传输测量，并与模拟相关联。

As integrated circuits (ICs) have progressed to finer feature sizes and higher levels of integration, interconnect has become a major challenge in IC technology development. Various interconnect solutions developed to date have not yet been able to replace Copper (Cu) interconnects due to their limitations in performance and/or difficulties in fabrication. In this project, novel Copper, Graphene, Transition Metal Dichalcogenide (TMD) hybrid interconnects will be demonstrated and explored by both simulations and experiments, which can compete with Cu nanowires with the same dimensions, and meanwhile have the potential to become the ultimate interconnect solution. The students who participate in this work will be trained with a broad range of skills to sustain future nanotechnology advancement. Education and outreach activities such as inclusive curriculum and culturally relevant teaching, Nano Days in the Birck Nanotechnology Center at Purdue, are also being developed to actively engage women and under-represented minorities into Science and Engineering.The entire physical process that takes place in a Cu/Graphene/TMD interconnect is yet to be fully understood. The challenge is to understand intricate interactions between multiphysics phenomena involving circuits, electromagnetics, materials, electron transport, and thermal diffusion in a broad band of frequencies. Experimentally, a rapid low-temperature process is critical to preserve the structural integrity of the Cu nanowires during deposition and will be studied. To conquer the aforementioned challenges, multiphysics simulation algorithms and experimental methods will be pursued. On the experimental side, a low temperature chemical vapor deposition recipe, along with a plasma enhanced process, will be developed. Electrical and thermal transport measurements will be performed and correlated with simulations.