SHF: SMALL: Multiphysics Simulation Algorithms and Experimental Methods for the Development of Cu/Graphene/TMD Hybrid Interconnect Solution

随着集成电路（IC）向更细的特征尺寸和更高的集成水平发展，互连已成为集成电路技术发展的主要挑战。由于铜（Cu）互连的性能限制和/或制造困难，迄今为止开发的各种互连解决方案尚未能够取代铜（Cu）互连。在本项目中，新型铜、石墨烯、过渡金属二硫代化物（TMD）混合互连将通过模拟和实验来展示和探索，它可以与相同尺寸的铜纳米线竞争，同时有可能成为最终的互连解决方案。参与这项工作的学生将获得广泛的技能培训，以维持未来纳米技术的发展。普渡大学伯克纳米技术中心的包容性课程和文化相关教学、纳米日等教育和推广活动也正在开发中，以积极吸引女性和代表性不足的少数民族进入科学和工程领域。在铜/石墨烯/TMD互连中发生的整个物理过程尚未完全了解。挑战在于理解多物理场现象之间复杂的相互作用，包括电路、电磁学、材料、电子传输和宽频带的热扩散。在实验中，快速低温工艺对于保持铜纳米线在沉积过程中的结构完整性至关重要，并将进行研究。为了克服上述挑战，多物理场仿真算法和实验方法将被追求。在实验方面，将开发一种低温化学气相沉积配方，以及等离子体增强工艺。将进行电和热输运测量，并与模拟相关联。

As integrated circuits (ICs) have progressed to finer feature sizes and higher levels of integration, interconnect has become a major challenge in IC technology development. Various interconnect solutions developed to date have not yet been able to replace Copper (Cu) interconnects due to their limitations in performance and/or difficulties in fabrication. In this project, novel Copper, Graphene, Transition Metal Dichalcogenide (TMD) hybrid interconnects will be demonstrated and explored by both simulations and experiments, which can compete with Cu nanowires with the same dimensions, and meanwhile have the potential to become the ultimate interconnect solution. The students who participate in this work will be trained with a broad range of skills to sustain future nanotechnology advancement. Education and outreach activities such as inclusive curriculum and culturally relevant teaching, Nano Days in the Birck Nanotechnology Center at Purdue, are also being developed to actively engage women and under-represented minorities into Science and Engineering.The entire physical process that takes place in a Cu/Graphene/TMD interconnect is yet to be fully understood. The challenge is to understand intricate interactions between multiphysics phenomena involving circuits, electromagnetics, materials, electron transport, and thermal diffusion in a broad band of frequencies. Experimentally, a rapid low-temperature process is critical to preserve the structural integrity of the Cu nanowires during deposition and will be studied. To conquer the aforementioned challenges, multiphysics simulation algorithms and experimental methods will be pursued. On the experimental side, a low temperature chemical vapor deposition recipe, along with a plasma enhanced process, will be developed. Electrical and thermal transport measurements will be performed and correlated with simulations.