GOALI: A low-voltage nonvolatile single transistor flash memory device based on ion transport in 2D electrolytes

以较低功率运行的电子设备的开发可能对全球能源消耗产生巨大影响。降低所需功率的一种方法是将部件的比例缩小到尽可能小的程度，这可以用几个原子层厚的材料来实现。石墨烯是一种很有前途的二维材料，它只有一层碳原子。在这项研究中，提出了一种依靠带正电荷或带负电荷的离子的运动来控制石墨烯中电子传输的装置。提出了一种利用离子与石墨烯之间强相互作用的新型数据存储器件。这一目标建议解决了开发低功率器件的实际挑战，以及在规模限制下工程离子传输的基础研究。圣母大学和美光科技公司之间的密切互动将有助于指导展示一种新型低电压非易失性单管闪存设备的努力。美光科技公司将参与指导和培训学生，并将接待一名学生作为暑期实习生。研究生和本科生将获得材料科学、化学和电气工程方面的跨学科技能。这项研究工作支持一个教育部分，包括研究生和本科生课堂教学中的案例研究。正在探索对二维(2D)离子导体中离子输运的基本理解，以实现2D晶体晶体管和存储器中离子掺杂的新概念。基于石墨烯的静电离子掺杂，提出了一种新型的低电压、非易失性闪存的概念。这种装置激发了对装置和基础运输研究的一套新的材料要求。研究中提出的基本离子输运构型是一对由2D固体电解质隔开的2D晶体电极。通过施加电场，锂离子将在2D晶体之间穿梭。锂从电解液的一侧向另一侧的转移将通过其中一个石墨烯电极的电子传导的变化来检测。为了促进离子的快速传输，该项目最初将重点放在冠醚酞菁(Pc)分子上，这些分子将以单层精度沉积。在石墨烯/冠醚Pc/石墨烯存储单元中，离子和电子的传输将在限制厚度的情况下被探索。材料的选择将由存储器应用需求驱动，以最小化读/写速度并在亚伏操作下最大化保持率。美光科技将为300纳米晶圆的制造和纳米离子设备的表征提供设备。

The development of electronic devices that operate at lower power could have a huge impact on global energy consumption. One way to decrease the required power is to scale the components to the smallest possible extent, which can be achieved with materials that are a few atomic layers thick. One of the promising two-dimensional (2D) materials is graphene which has a single layer of carbon atoms. In this study, a device is proposed that relies on the movement of ions that are positively or negatively charged to control electron transport in graphene. A novel data storage memory device is proposed that utilizes the strong interaction between ions and graphene. This GOALI proposal addresses the practical challenge of developing low-power devices, and the fundamental study of engineering ion transport at the limits of scaling. The close interaction between the University of Notre Dame and Micron Technology Inc. will serve to guide the effort for the demonstration of a novel low-voltage nonvolatile single transistor flash memory device. Micron Technology Inc. will be involved in mentoring and training the students and will host a student as a summer intern. The graduate and undergraduate students will gain interdisciplinary skills in materials science, chemistry and electrical engineering. The research effort supports an educational component involving case studies in the classroom teaching of graduate and undergraduate students.Fundamental understanding of ion transport in two-dimensional (2D) ion conductors is being explored to enable new concepts for ion doping in 2D crystal transistors and memory. A novel low-voltage, nonvolatile, flash memory concept is proposed based on the electrostatic ion doping of graphene. This device motivates a new set of material requirements for devices and fundamental transport studies. The essential ion transport configuration proposed for the study is a pair of 2D crystal electrodes separated by a 2D solid electrolyte. Lithium ions will shuttle between the 2D crystals by applying an electric field. The transfer of Li+ from one side of the electrolyte to the other will be sensed by the change in electronic conduction in one of the graphene electrodes. To facilitate fast ion transport, the project will focus initially on crown ether phthalocyanine (Pc) molecules, which will be deposited with monolayer precision. Ion and electron transport will be explored in a graphene/crown ether Pc/graphene memory cell at the limits of scaling the thickness. The choice of materials will be driven by the memory application requirement to minimize read/write speed and maximize retention with sub-volt operation. Micron Technology will offer facilities for fabrication of 300nm wafers and characterization of nanoionic devices.