GOALI: A low-voltage nonvolatile single transistor flash memory device based on ion transport in 2D electrolytes

低功耗电子设备的发展可能会对全球能源消耗产生巨大影响。降低所需功率的一种方法是将组件缩放到尽可能小的程度，这可以用几个原子层厚的材料来实现。具有单层碳原子的石墨烯是有前途的二维（2D）材料之一。在这项研究中，提出了一种依赖于带正电荷或负电荷的离子的运动来控制石墨烯中的电子传输的装置。提出了一种利用离子与石墨烯之间的强相互作用的新型数据存储存储器件。这GOALI提案解决了开发低功耗设备的实际挑战，以及在缩放极限下工程离子传输的基础研究。圣母大学和美光科技公司之间的密切互动。将用于指导新型低电压非易失性单晶体管闪存器件的演示工作。美光科技公司将参与指导和培训学生，并将接待一名学生作为暑期实习生。研究生和本科生将获得材料科学，化学和电气工程的跨学科技能。研究工作支持的教育组件，包括在研究生和本科生的课堂教学中的案例研究。正在探索二维（2D）离子导体中离子输运的基本理解，以实现2D晶体管和存储器中离子掺杂的新概念。提出了一种基于静电离子掺杂石墨烯的新型低电压、非易失性闪存概念。该装置激发了一套新的材料要求的装置和基础运输研究。为研究提出的基本离子传输配置是由2D固体电解质分离的一对2D晶体电极。锂离子将通过施加电场在2D晶体之间穿梭。Li+从电解质的一侧到另一侧的转移将通过石墨烯电极之一中的电子传导的变化来感测。为了促进快速离子传输，该项目最初将集中在冠醚酞菁（Pc）分子上，这些分子将以单层精度沉积。离子和电子传输将探索在石墨烯/冠醚Pc/石墨烯存储单元的限制缩放的厚度。材料的选择将由存储器应用要求驱动，以最小化读/写速度并最大化亚伏操作的保持力。美光科技将提供300纳米晶圆制造和纳米离子器件表征的设施。

The development of electronic devices that operate at lower power could have a huge impact on global energy consumption. One way to decrease the required power is to scale the components to the smallest possible extent, which can be achieved with materials that are a few atomic layers thick. One of the promising two-dimensional (2D) materials is graphene which has a single layer of carbon atoms. In this study, a device is proposed that relies on the movement of ions that are positively or negatively charged to control electron transport in graphene. A novel data storage memory device is proposed that utilizes the strong interaction between ions and graphene. This GOALI proposal addresses the practical challenge of developing low-power devices, and the fundamental study of engineering ion transport at the limits of scaling. The close interaction between the University of Notre Dame and Micron Technology Inc. will serve to guide the effort for the demonstration of a novel low-voltage nonvolatile single transistor flash memory device. Micron Technology Inc. will be involved in mentoring and training the students and will host a student as a summer intern. The graduate and undergraduate students will gain interdisciplinary skills in materials science, chemistry and electrical engineering. The research effort supports an educational component involving case studies in the classroom teaching of graduate and undergraduate students.Fundamental understanding of ion transport in two-dimensional (2D) ion conductors is being explored to enable new concepts for ion doping in 2D crystal transistors and memory. A novel low-voltage, nonvolatile, flash memory concept is proposed based on the electrostatic ion doping of graphene. This device motivates a new set of material requirements for devices and fundamental transport studies. The essential ion transport configuration proposed for the study is a pair of 2D crystal electrodes separated by a 2D solid electrolyte. Lithium ions will shuttle between the 2D crystals by applying an electric field. The transfer of Li+ from one side of the electrolyte to the other will be sensed by the change in electronic conduction in one of the graphene electrodes. To facilitate fast ion transport, the project will focus initially on crown ether phthalocyanine (Pc) molecules, which will be deposited with monolayer precision. Ion and electron transport will be explored in a graphene/crown ether Pc/graphene memory cell at the limits of scaling the thickness. The choice of materials will be driven by the memory application requirement to minimize read/write speed and maximize retention with sub-volt operation. Micron Technology will offer facilities for fabrication of 300nm wafers and characterization of nanoionic devices.