GOALI: A low-voltage nonvolatile single transistor flash memory device based on ion transport in 2D electrolytes

GOALI：基于二维电解质中离子传输的低压非易失性单晶体管闪存器件

• 批准号: 1631717
• 负责人: Susan Fullerton
• 金额: $ 30.78万
• 依托单位: University of Pittsburgh
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-09-01 至 2018-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1631717&HistoricalAwards=false
• 关键词: GOALI; low; voltage; nonvolatile; single

The development of electronic devices that operate at lower power could have a huge impact on global energy consumption. One way to decrease the required power is to scale the components to the smallest possible extent, which can be achieved with materials that are a few atomic layers thick. One of the promising two-dimensional (2D) materials is graphene which has a single layer of carbon atoms. In this study, a device is proposed that relies on the movement of ions that are positively or negatively charged to control electron transport in graphene. A novel data storage memory device is proposed that utilizes the strong interaction between ions and graphene. This GOALI proposal addresses the practical challenge of developing low-power devices, and the fundamental study of engineering ion transport at the limits of scaling. The close interaction between the University of Notre Dame and Micron Technology Inc. will serve to guide the effort for the demonstration of a novel low-voltage nonvolatile single transistor flash memory device. Micron Technology Inc. will be involved in mentoring and training the students and will host a student as a summer intern. The graduate and undergraduate students will gain interdisciplinary skills in materials science, chemistry and electrical engineering. The research effort supports an educational component involving case studies in the classroom teaching of graduate and undergraduate students.Fundamental understanding of ion transport in two-dimensional (2D) ion conductors is being explored to enable new concepts for ion doping in 2D crystal transistors and memory. A novel low-voltage, nonvolatile, flash memory concept is proposed based on the electrostatic ion doping of graphene. This device motivates a new set of material requirements for devices and fundamental transport studies. The essential ion transport configuration proposed for the study is a pair of 2D crystal electrodes separated by a 2D solid electrolyte. Lithium ions will shuttle between the 2D crystals by applying an electric field. The transfer of Li+ from one side of the electrolyte to the other will be sensed by the change in electronic conduction in one of the graphene electrodes. To facilitate fast ion transport, the project will focus initially on crown ether phthalocyanine (Pc) molecules, which will be deposited with monolayer precision. Ion and electron transport will be explored in a graphene/crown ether Pc/graphene memory cell at the limits of scaling the thickness. The choice of materials will be driven by the memory application requirement to minimize read/write speed and maximize retention with sub-volt operation. Micron Technology will offer facilities for fabrication of 300nm wafers and characterization of nanoionic devices.

低功耗电子设备的开发可能会对全球能源消耗产生巨大影响。降低所需功率的一种方法是将组件缩小到尽可能小的范围，这可以用几个原子层厚的材料来实现。石墨烯是一种很有前途的二维（2D）材料，它只有一层碳原子。在这项研究中，提出了一种依靠带正电荷或负电荷的离子运动来控制石墨烯中电子传输的装置。提出了一种利用离子与石墨烯之间强相互作用的新型数据存储存储器。该GOALI提案解决了开发低功耗器件的实际挑战，以及在缩放极限下工程离子传输的基础研究。圣母大学和美光科技公司之间的密切合作将有助于指导一种新型低压非易失性单晶体管闪存设备的演示工作。美光科技公司将参与指导和培训学生，并将接待一名学生作为暑期实习生。研究生和本科生将获得材料科学、化学和电气工程的跨学科技能。这项研究工作支持在研究生和本科生的课堂教学中进行案例研究。研究人员正在探索二维离子导体中离子输运的基本原理，从而为二维晶体晶体管和存储器中的离子掺杂提供新的概念。提出了一种基于石墨烯静电离子掺杂的新型低压、非易失性快闪存储器的概念。这一装置对器件和基础输运研究提出了一套新的材料要求。本研究提出的基本离子传输配置是一对由二维固体电解质分开的二维晶体电极。锂离子将通过施加电场在二维晶体之间穿梭。锂离子从电解质的一边转移到另一边将通过石墨烯电极中电子传导的变化来感知。为了促进快速离子传输，该项目将首先关注冠醚酞菁（Pc）分子，该分子将以单层精度沉积。离子和电子的传输将在石墨烯/冠醚Pc/石墨烯存储电池中进行探索。材料的选择将由存储器应用要求驱动，以最小化读/写速度，并最大限度地保留亚伏特操作。美光科技将为300纳米晶圆的制造和纳米离子器件的表征提供设备。