EAGER: Ultra-High-Performance Terahertz Detection Exploiting Super-Steep-Subthreshold-Slope (S4)-FinFETs

EAGER：利用超陡亚阈值斜率 (S4)-FinFET 的超高性能太赫兹检测

• 批准号: 1644592
• 负责人: Pierre-Emmanuel Gaillardon
• 金额: $ 15万
• 依托单位: University of Utah
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-08-15 至 2018-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1644592&HistoricalAwards=false
• 关键词: EAGER; Ultra; Performance; Terahertz; Detection

Over the past decades, the terahertz frequency regime (0.1-30 THz) has become the subject of much attention due to its wide range of applications in diverse areas such as astronomy, imaging, spectroscopy, communications, and so on. Although significant progress has been recently achieved, there is still a need for semiconductor devices efficiently operating at these frequencies. This project will provide in a short-timeframe an answer for a long-standing problem of the terahertz community: How to achieve very sensitive terahertz detection in foundry-friendly, large-scale manufacturable, solid-state devices at room temperature. To achieve this goal, the proposed work aims to exploit Super-Steep-Subthreshold-Slope Fin-based Field Effect Transistors as efficient terahertz detectors. This project will be the first to perform research on terahertz applications of this emerging transistor technology and is expected to transform the terahertz technology landscape in the coming years. Indeed, the expectation is to provide more than two orders of performance gain in terahertz detection, which is of immense interest to the terahertz community. More generally, harvesting the unique properties of emerging transistor technologies for viable real-world applications is also of high interest to the semiconductor device community. This research vision is interlaced with the strong educational objective of mentoring new generations of graduate and undergraduate students in the field of electron devices, high frequency electronics, analog circuits, terahertz, and optics, stimulating their critical thinking and curiosity by providing them with hands-on experience in cutting-edge research. This is of significant importance given the future projected needs for highly trained engineers and scientists in the United States.This project aims at exploiting Super-Steep-Subthreshold-Slope Fin-based Field Effect Transistors as efficient terahertz detectors. The fundamental mechanism enabling a very sensitive terahertz response in these devices is their super-steep subthreshold slope (10mV/dec.), which is a result of a positive feedback induced by weak impact ionization and can lead to a very large responsivity. Preliminary data based on the measured direct current characteristics of fabricated devices predicts a much better performance in terms of both responsivity as well as noise equivalent power with respect to all the existing current room-temperature terahertz detector technologies, i.e., noise equivalent power ~ 0.01 pW/(Hz^0.5). Super-steep-slope Field Effect Transistors will be fabricated and configured as ultra-high-performance terahertz detectors. Thanks to its super-steep-slope response, this technology can promise more than two orders of magnitude larger responsivity than the thermally-limited 10 A/W responsivity of room-temperature FET and Schottky diode terahertz detectors, without increase in cost. This level of performance is not achievable with regular CMOS technologies. Moreover, when compared with other promising post-CMOS transistor technologies as terahertz detectors (such as tunnel FETs), these devices constitute a more robust platform since: (a) room-temperature demonstrations of super-steep-slope field effect transistors with direct current performance according to the requirements of terahertz detectors have been already demonstrated, (b) super-steep-slope field effect transistors are silicon based and 100% compatible with CMOS processes.

在过去的几十年里，太赫兹频段（0.1- 30thz）由于其在天文学、成像、光谱学、通信等各个领域的广泛应用而备受关注。尽管最近取得了重大进展，但仍然需要在这些频率下有效工作的半导体器件。该项目将在短时间内为太赫兹社区长期存在的问题提供答案：如何在室温下实现对铸工友好、可大规模制造的固态器件中非常敏感的太赫兹检测。为了实现这一目标，提出的工作旨在利用基于超陡亚阈值斜率鳍的场效应晶体管作为高效的太赫兹探测器。该项目将是第一个对这种新兴晶体管技术的太赫兹应用进行研究的项目，预计将在未来几年改变太赫兹技术的格局。事实上，期望在太赫兹检测中提供超过两个数量级的性能增益，这对太赫兹社区非常感兴趣。更一般地说，为可行的实际应用获取新兴晶体管技术的独特特性也是半导体器件社区的高度兴趣所在。这一研究愿景与指导电子器件、高频电子、模拟电路、太赫兹和光学领域的新一代研究生和本科生的强大教育目标交织在一起，通过为他们提供前沿研究的实践经验，激发他们的批判性思维和好奇心。考虑到美国未来对训练有素的工程师和科学家的预计需求，这一点非常重要。本项目旨在开发基于超陡亚阈值斜率鳍片的场效应晶体管作为高效的太赫兹探测器。在这些器件中实现非常敏感的太赫兹响应的基本机制是它们的超陡亚阈值斜率（10mV/ 12），这是由弱撞击电离引起的正反馈的结果，可以导致非常大的响应。基于测量的直流特性的初步数据预测，相对于所有现有的室温太赫兹探测器技术，在响应性和噪声等效功率方面都有更好的性能，即噪声等效功率~ 0.01 pW/(Hz^0.5)。超陡坡场效应晶体管将被制造并配置为超高性能的太赫兹探测器。由于其超陡斜率响应，该技术可以保证比室温场效应管和肖特基二极管太赫兹探测器的热限制10 A/W响应率大两个数量级以上，而不会增加成本。这种性能水平是常规CMOS技术无法实现的。此外，与其他有前途的后CMOS晶体管技术如太赫兹探测器（如隧道场效应管）相比，这些器件构成了一个更强大的平台，因为：(a)根据太赫兹探测器的要求，已经演示了具有直流性能的超陡斜率场效应晶体管的室温演示，(b)超陡斜率场效应晶体管是硅基的，与CMOS工艺100%兼容。

项目成果

Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

通过有机金属方法进行晶体管技术的低温湿法保形硅化镍沉积

• DOI: 10.1021/acsami.6b13852
• 发表时间: 2017
• 期刊: ACS Applied Materials & Interfaces
• 影响因子: 9.5
• 作者: Lin, Tsung-Han;Margossian, Tigran;De Marchi, Michele;Thammasack, Maxime;Zemlyanov, Dmitry;Kumar, Sudhir;Jagielski, Jakub;Zheng, Li-Qing;Shih, Chih-Jen;Zenobi, Renato
• 通讯作者: Zenobi, Renato

A Continuous Compact DC Model for Dual-Independent-Gate FinFETs

双独立栅极 FinFET 的连续紧凑 DC 模型

• DOI: 10.1109/jeds.2016.2632709
• 发表时间: 2017
• 期刊: IEEE Journal of the Electron Devices Society
• 影响因子: 2.3
• 作者: Hasan, Mehdi;Gaillardon, Pierre-Emmanuel;Sensale-Rodriguez, Berardi
• 通讯作者: Sensale-Rodriguez, Berardi

Towards high-performance polarity-controllable FETs with 2D materials

采用 2D 材料实现高性能极性可控 FET

• DOI: 10.23919/date.2018.8342088
• 发表时间: 2018
• 期刊: Automation & Test in Europe Conference & Exhibition (DATE
• 作者: Resta, Giovanni V.;Gonzalez, Jorge Romero;Balaji, Yashwanth;Agarwal, Tarun;Lin, Dennis;Catthor, Francky;Radu, Iuliana P.;De Micheli, Giovanni;Gaillardon, Pierre-Emmanuel
• 通讯作者: Gaillardon, Pierre-Emmanuel

Operation regimes and electrical transport of steep slope Schottky Si-FinFETS

陡坡肖特基 Si-FinFET 的工作状态和电传输

• DOI: 10.1063/1.4975475
• 发表时间: 2017
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: D.-Y. Jeon;J. Zhang;J. Trommer;S.-J. Park;P.-E. Gaillardon;G. De Micheli;T. Mikolajick;W. M. Weber
• 通讯作者: W. M. Weber

Polarity-controllable 2-dimensional transistors: experimental demonstration and scaling opportunities

极性可控的二维晶体管：实验演示和扩展机会

• 发表时间: 2017
• 期刊: The 17th IEEE International Conference on Nanotechnology (IEEE NANO 2017
• 作者: Resta, Giovanni V.;Balaji, Yashwanth;Agarwal, Tarun;Radu, Iuliana P.;Lin, Dennis;Catthoor, Francky;Gaillardon, Pierre-Emmanuel;De Micheli, Giovanni
• 通讯作者: De Micheli, Giovanni