Laser-Chemical Processing of Semiconductor Devices Based on Two-Dimensional Atomic Layer Materials

基于二维原子层材料的半导体器件激光化学加工

• 批准号: 1662475
• 负责人: Costas Grigoropoulos
• 金额: $ 39.59万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-08-15 至 2020-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1662475&HistoricalAwards=false
• 关键词: Laser; Chemical; Processing; Semiconductor; Devices

Two-dimensional atomic layer semiconductors based on transition metal dichalcogenides have attracted intense interest due to their exceptional optoelectronic properties. Compared to silicon, they have substantial advantages for flexible electronics as they are inherently flexible and their properties are highly tunable. However, they have been very difficult to fabricate with conventional methods because they are atomically thin and fragile. This award investigates laser-assisted chemical processing to fabricate stable, high-performance atomic layer semiconductor devices with ultra-high sensitivity and extraordinary functionalities. It contributes a new technology for the processing, functionalization and patterning of transition metal dichalcogenide-based two-dimensional semiconductor devices. The chemical composition of the two-dimensional semiconductor materials are modified and controlled at the nanoscale by incorporating doping atoms from a selected gas source by means of laser irradiation. This process is stable in ambient air and enables precise tuning of the electronic properties of the material that is necessary for fabricating high performance devices. This coupled materials synthesis, processing and characterization methodology provides significant opportunities for undergraduate and graduate students, including women and minorities, to gain valuable research experiences and training in nanoscience and engineering.The objective of this project is to utilize laser driven chemical processing for localized functionalization of two-dimensional atomic layer semiconductors in a dual-beam processing system. The process involves a laser beam irradiated at normal incidence to generate vacancies and another synchronized ultraviolet nanosecond laser beam irradiated parallel to the target specimen for dissociation of dopant precursor gas molecules. In this manner, it is possible to decouple and control the mechanisms involved in the doping and alloying processes. Near-field optical processing is implemented to reduce feature resolution and generate highly defined nanoscale patterns. Scalability and integration into functional devices are explored to demonstrate large-scale nanomanufacturing. The first contribution entails stable and spatially controlled writing of p- and n-doped domains in these materials, followed by the deliberate tuning of the semiconductor band gap via laser induced alloying. The second contribution is the direct nanopatterning of the target materials using assembled microlens and nanowire elements integrated into the laser CVD system. The research work is validated by fabricating transistors having sharp nanoscale PN junctions and lateral tandem optoelectronic devices. Finally, this project offers a robust and repeatable platform for discovering entirely new and exciting physics of these exotic materials.

基于过渡金属二硫属化合物的二维原子层半导体由于其优异的光电性能而引起了人们的极大兴趣。与硅相比，它们对于柔性电子产品具有显著的优势，因为它们具有固有的柔性并且它们的特性是高度可调的。然而，它们非常难以用常规方法制造，因为它们是原子级薄且易碎的。该奖项研究激光辅助化学处理，以制造具有超高灵敏度和非凡功能的稳定，高性能原子层半导体器件。它为过渡金属二硫属化物基二维半导体器件的加工、功能化和图案化提供了新的技术。二维半导体材料的化学组成通过借助于激光照射从选定的气体源并入掺杂原子而在纳米级上被修改和控制。该工艺在环境空气中稳定，并且能够精确调节制造高性能器件所需的材料的电子特性。这种耦合的材料合成，加工和表征方法提供了重要的机会，本科生和研究生，包括妇女和少数民族，获得宝贵的研究经验和培训，在纳米科学和engineering.The项目的目标是利用激光驱动的化学加工的局部功能化的二维原子层半导体的双光束处理系统。该过程涉及一个激光束照射法向入射产生的空缺和另一个同步的紫外纳秒激光束照射平行于目标样品的掺杂剂前体气体分子的离解。以这种方式，可以解耦和控制掺杂和合金化过程中涉及的机制。实施近场光学处理以降低特征分辨率并生成高度定义的纳米级图案。可扩展性和集成到功能设备进行了探索，以证明大规模的纳米制造。第一个贡献需要在这些材料中的p-和n-掺杂域的稳定和空间控制的写入，然后通过激光诱导合金化的半导体带隙的故意调谐。第二个贡献是使用集成到激光CVD系统中的组装的微透镜和纳米线元件的目标材料的直接纳米图案化。通过制造具有尖锐纳米级PN结的晶体管和横向串联光电器件，验证了研究工作。最后，该项目提供了一个强大的和可重复的平台，用于发现这些奇异材料的全新和令人兴奋的物理学。

项目成果

A laser-assisted chlorination process for reversible writing of doping patterns in graphene

• DOI: 10.1038/s41928-022-00801-2
• 发表时间: 2022-08-01
• 期刊: NATURE ELECTRONICS
• 影响因子: 34.3
• 作者: Rho, Yoonsoo;Lee, Kyunghoon;Grigoropoulos, Costas P.
• 通讯作者: Grigoropoulos, Costas P.