PFI:AIR-TT: Prototype Development of Recipe Optimization for Deposition and Etching (RODEo)

PFI:AIR-TT：沉积和蚀刻配方优化的原型开发 (RODEo)

• 批准号: 1701121
• 负责人: Roger Bonnecaze
• 金额: $ 19.97万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-15 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1701121&HistoricalAwards=false
• 关键词: PFI; AIR; TT; Prototype; Development

This PFI:AIR Technology Translation project focuses on translating a research code for plasma etch and process optimization into a user-friendly industrially validated software tool. This will reduce the costs of recipe development by over 65% and shorten time to market for the products of semiconductor tool and chip makers. A single semiconductor chip requires over 50 etching steps. Each of these etch steps is a unique chemical process that requires specifications of an exact process condition or recipe (e.g., pressure, temperature, chemical ingredients and amounts, and time in the etch or deposition tool). The underlying patent-pending methodology and software implementation for this project, Recipe Optimization for Deposition and Etching (RODEo), uses kinetic process models and statistical analysis to reduce the time and cost of process development by a factor of three as compared with current industrial standards. Greater than $1.2B is spent on etch and deposition process development per year. This cost is projected to grow as new technologies and smaller features require new materials and greater numbers of etch and deposition steps. By reducing the number of experiments necessary to create a recipe by a factor of three, RODEo can reduce this by $800M. Development of plasma-based semiconductor processes is extremely costly and time consuming, severely slowing technology growth and constraining semiconductor equipment and chip sales. This project addresses this technology gap as it translates the RODEo methodology from research discovery toward commercial application. RODEo uses Bayesian statistics to uniquely combine the physics-based models and experiments and the expert or so-called tribal knowledge of etch engineers to accelerate the process of recipe development. Elements to be created for commercial translation of the research code include: 1) 3D profile simulator to couple with the existing plasma model; 2) Database of etch chemistry models and kinetic parameters for ease of use; 3) Optimized code for increased computational speed; 4) User interface; and 5) Industry demo of RODEo recipe development for sidewall control for etch of a high aspect ratio trench, against methods used by one of our industrial partners. In addition, personnel involved in this project, including undergraduate, graduate and post-doctoral students, will receive experiences in technology translation through interactions and user feedback from our partners and future customers, which include Lam Research, Intel, and Tokyo Electron.This project is jointly funded by the Division of Industrial Innovation and Partnerships and the Division of Engineering Education and Centers; reflecting the alignment of this project with the respective goals of the two divisions and their programs.

该PFI：空气技术翻译项目的重点是将血浆蚀刻的研究代码和过程优化转换为具有用户友好的工业验证的软件工具。这将使食谱开发的成本降低超过65％，并缩短了半导体工具和芯片制造商产品的营销时间。 一个半导体芯片需要超过50个蚀刻步骤。这些蚀刻步骤中的每一个都是一个独特的化学过程，需要确切过程或食谱的规格（例如，压力，温度，化学成分和量以及蚀刻或沉积工具中的时间）。 该项目的基础申请专利方法和软件实施，用于沉积和蚀刻的配方优化（Rodeo），使用动力学过程模型和统计分析，将过程开发的时间和成本降低了三倍，而不是当前的工业标准。 每年花费大于$ 1.2B和蚀刻过程开发。预计随着新技术和较小的功能需要新材料以及更多的蚀刻和沉积步骤，该成本预计会增长。通过减少创建配方所需的实验数量的数量，牛仔竞技表演可以减少8亿美元。 基于等离子体的半导体过程的开发非常昂贵，并且耗时，严重减慢技术的增长和约束半导体设备和芯片销售。该项目解决了这一技术差距，因为它将牛仔竞技表演方法从研究发现转化为商业应用。 Rodeo使用贝叶斯统计数据将基于物理的模型和实验与蚀刻工程师的专家或所谓的部落知识相结合，以加速食谱开发过程。 为研究代码的商业翻译而创建的要素包括：1）3D配置模拟器与现有的等离子模型相对； 2）蚀刻化学模型和动力学参数的数据库，以便于使用； 3）优化的代码以提高计算速度； 4）用户界面； 5）牛仔竞技配方开发的行业演示，用于针对高宽高比沟槽的蚀刻侧面控制，这是针对我们一位工业伙伴使用的方法。 此外，参与该项目的人员，包括本科，研究生和博士后学生，将通过我们的合作伙伴和未来客户的互动和用户反馈来获得技术翻译的经验，其中包括LAM Research，Intel和Tokyo Electron。该项目由工业创新和合作伙伴和合作伙伴关系和工程师师司的共同资助。反映了该项目与两个部门及其计划的各个目标的一致性。

项目成果

A cellular automata simulation of atomic layer etching

原子层蚀刻的元胞自动机模拟

• DOI: 10.1117/12.2297435
• 发表时间: 2018
• 期刊: Advanced Etch Technology for Nanopatterning VII
• 作者: Bonnecaze, Roger T.;Chopra, Meghali J.;Strotmann, Jan
• 通讯作者: Strotmann, Jan

A model-based, Bayesian approach to the CF4/Ar etch of SiO2

基于模型的贝叶斯方法对 SiO2 进行 CF4/Ar 蚀刻

• DOI: 10.1117/12.2297482
• 发表时间: 2018
• 期刊: Design-Process-Technology Co-optimization for Manufacturability XII
• 作者: Chopra, Meghali J.;Zhu, Xilan;Zhang, Zizhuo Z.;Helpert, Sofia;Verma, Rahul;Bonnecaze, Roger
• 通讯作者: Bonnecaze, Roger

Minimum reaction network necessary to describe Ar/CF4 plasma etch

• DOI: 10.1117/12.2297502
• 发表时间: 2018-03
• 作者: Sofia Helpert;Meghali Chopra;R. Bonnecaze