DMREF: Collaborative Research: Synthesis, Characterization, and Modeling of Complex Amorphous Semiconductors for Future Device Applications
DMREF:协作研究:用于未来器件应用的复杂非晶半导体的合成、表征和建模
基本信息
- 批准号:1729016
- 负责人:
- 金额:$ 96万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2017
- 资助国家:美国
- 起止时间:2017-10-01 至 2022-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Non-technical Description: By understanding a material's structure, it is possible to predict and design its properties. Whereas crystals are well-understood by their regular pattern of atoms, the structure of amorphous materials with their randomly bonded atoms is extremely challenging to determine. Yet this disorganized structure is exactly what makes these materials advantageous for many technological applications. For example, large-areas can be coated with amorphous materials in smooth layers for application in the next-generation flexible flat panel displays. An important objective of this project is to gather, decipher, integrate, and organize large experimental and computer generated data to accurately describe the structure and properties of a large class of complex amorphous materials. This materials data along with open-source statistical software developed within the project will be made accessible as part of the Global Materials Network to accelerate the discovery of new materials with unique features and performance and to help produce new products at a much faster pace and reduced cost. Technical Description: Unlike Si-based semiconductors, amorphous oxide semiconductors exhibit optical, electrical, thermal, and mechanical properties that are comparable or even superior to those possessed by their crystalline counterparts. Most notably, carrier mobility of amorphous oxide semiconductors is an order of magnitude larger than that of amorphous hydrogenated silicon commonly used in solar cells and flat-panel displays. Within unified theoretical and experimental framework, this project aims to establish genomic deposition-structure-property relationships in complex amorphous oxide and chalcogenide semiconductors in order to systematically record and organize the data into a searchable database. The research will integrate controlled synthesis, advanced characterization, multi-scale modeling, time-dependent studies, and accurate first-principles calculations to provide microscopic understanding of the complex interplay between the nanostructure, morphology, and electron transport regimes across the entire crystalline-to-amorphous transition. Development of realistic approaches for non-stoichiometric-melt cooling and time-dependent statistical analysis, will enable studies of defect formation and dynamics, ion diffusion, structural evolution and stretched-exponential relaxation, phase transformation, and crystallization processes, bringing the computer-aided design of amorphous materials to a new level. The PIs plan to release the Amorphous Structure Analysis (AStA) as open source and build a user community around the language by ensuring that interested researchers are able to contribute to AStA codebase. This will allow a wider growth of the project. This aspect is of special interest to the software cluster in the Office of Advanced Cyberinfrastructure, which has provided co-funding for this award.
非技术描述:通过了解材料的结构,可以预测和设计其性能。虽然晶体通过其原子的规则模式得到了很好的理解,但具有随机键合原子的非晶材料的结构非常难以确定。然而,正是这种无序的结构使这些材料在许多技术应用中具有优势。例如,大面积可以用光滑层中的非晶材料涂覆,以应用于下一代柔性平板显示器。该项目的一个重要目标是收集、破译、整合和组织大量实验和计算机生成的数据,以准确描述一大类复杂非晶材料的结构和性能。这些材料数据沿着项目内开发的开源统计软件将作为全球材料网络的一部分提供,以加速发现具有独特功能和性能的新材料,并帮助以更快的速度生产新产品,降低成本。 技术说明:与Si基半导体不同,非晶氧化物半导体表现出与它们的晶体对应物所具有的性质相当或甚至上级的光学、电学、热学和机械性质。最值得注意的是,非晶氧化物半导体的载流子迁移率比太阳能电池和平板显示器中常用的非晶氢化硅的载流子迁移率大一个数量级。在统一的理论和实验框架内,该项目旨在建立复杂的非晶氧化物和硫族化物半导体中的基因组沉积-结构-性质关系,以便系统地记录和组织数据到可搜索的数据库中。该研究将整合控制合成,先进的表征,多尺度建模,时间依赖性研究和精确的第一原理计算,以提供对整个晶体到非晶过渡的纳米结构,形态和电子传输机制之间复杂相互作用的微观理解。非化学计量熔体冷却和时间相关统计分析的现实方法的开发,将使缺陷形成和动力学、离子扩散、结构演变和拉伸指数弛豫、相变和结晶过程的研究成为可能,从而将计算机辅助设计非晶材料提升到一个新的水平。PI计划将非晶结构分析(AStA)作为开源发布,并通过确保感兴趣的研究人员能够为AStA代码库做出贡献,围绕该语言建立一个用户社区。这将使该项目得到更广泛的发展。高级网络基础设施办公室的软件集群对此特别感兴趣,该办公室为该奖项提供了共同资助。
项目成果
期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Realizing the heteromorphic superlattice: Repeated heterolayers of amorphous insulator and polycrystalline semiconductor with minimal interface defects
实现异形超晶格:具有最小界面缺陷的非晶绝缘体和多晶半导体的重复异质层
- DOI:10.1002/adma.202207927
- 发表时间:2023
- 期刊:
- 影响因子:29.4
- 作者:Lee, Woongkyu;Chen, Xianyu;Shao, Qing;Baik, Sung‐Il;Kim, Sungkyu;Seidman, David;Bedzyk, Michael;Dravid, Vinayak;Ketterson, John B.;Medvedeva, Julia
- 通讯作者:Medvedeva, Julia
Field-effect conductivity scaling for two-dimensional materials with tunable impurity density
- DOI:10.1088/2053-1583/ac72b0
- 发表时间:2022-05
- 期刊:
- 影响因子:5.5
- 作者:Chulin Wang;Lintao Peng;Spencer A. Wells;Jeffrey D. Cain;Yi-Kai Huang;Lawrence A Rhoads;V. Dravid;M. Hersam;M. Grayson
- 通讯作者:Chulin Wang;Lintao Peng;Spencer A. Wells;Jeffrey D. Cain;Yi-Kai Huang;Lawrence A Rhoads;V. Dravid;M. Hersam;M. Grayson
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Matthew Grayson其他文献
Visualizing toral automorphisms
- DOI:
10.1007/bf03025260 - 发表时间:
2009-01-12 - 期刊:
- 影响因子:0.400
- 作者:
Matthew Grayson;Bruce Kitchens;George Zettler - 通讯作者:
George Zettler
Critical sets in 3-space
- DOI:
10.1007/bf02699187 - 发表时间:
1993-12-01 - 期刊:
- 影响因子:3.500
- 作者:
Matthew Grayson;Charles Pugh - 通讯作者:
Charles Pugh
Spectral measurement of the Hall angle response in normal state cuprate superconductors.
正常状态铜酸盐超导体中霍尔角响应的光谱测量。
- DOI:
- 发表时间:
2001 - 期刊:
- 影响因子:8.6
- 作者:
Matthew Grayson;L. Rigal;D. Schmadel;H. Drew;P. J. Kung - 通讯作者:
P. J. Kung
Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth
使用切边过度生长制造的 n 型和 p 型二维系统的四点测量
- DOI:
- 发表时间:
2005 - 期刊:
- 影响因子:0
- 作者:
Matthew Grayson;S. Roth;Ying Xiang;F. Fischer;D. Schuh;M. Bichler - 通讯作者:
M. Bichler
p × n-Type Transverse Thermoelectrics: A Novel Type of Thermal Management Material
- DOI:
10.1007/s11664-015-3666-z - 发表时间:
2015-03-10 - 期刊:
- 影响因子:2.500
- 作者:
Yang Tang;Boya Cui;Chuanle Zhou;Matthew Grayson - 通讯作者:
Matthew Grayson
Matthew Grayson的其他文献
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{{ truncateString('Matthew Grayson', 18)}}的其他基金
Machine Learning and Molecular Modelling: A Synergistic Approach to Rapid Reactivity Prediction
机器学习和分子建模:快速反应预测的协同方法
- 批准号:
EP/W003724/1 - 财政年份:2022
- 资助金额:
$ 96万 - 项目类别:
Research Grant
NSF-BSF: CCSS: Resistance Tomography with 2D Sensor Membranes
NSF-BSF:CCSS:采用 2D 传感器膜的电阻断层扫描
- 批准号:
1912694 - 财政年份:2019
- 资助金额:
$ 96万 - 项目类别:
Standard Grant
IRES: Nanomaterials undergraduate Research in Germany (NanoRING)
IRES:德国纳米材料本科研究(NanoRING)
- 批准号:
1460031 - 财政年份:2015
- 资助金额:
$ 96万 - 项目类别:
Standard Grant
CAREER: Bose-Einstein Condensation Using Different Flavors of Electrons
职业:使用不同电子味道的玻色-爱因斯坦凝聚
- 批准号:
0748856 - 财政年份:2008
- 资助金额:
$ 96万 - 项目类别:
Continuing Grant
Mathematical Sciences Postdoctoral Research Fellowship
数学科学博士后研究奖学金
- 批准号:
8605726 - 财政年份:1986
- 资助金额:
$ 96万 - 项目类别:
Fellowship Award
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