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Rational Design of High-performance Semiconductors based on Inorganic Perovskites Containing Bismuth

Rational Design of High-performance Semiconductors based on Inorganic Perovskites Containing Bismuth
基于含铋无机钙钛矿的高性能半导体的合理设计
批准号:
1806147
负责人:
Rohan Mishra
金额:
$48.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2018
资助国家:
美国
项目状态:
已结题
起止时间:
2018-07-01 至 2023-06-30

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NON-TECHNICAL DESCRIPTION: The development of high-performance oxide semiconductors with desired electronic structure has direct implications on many energy-related applications including photovoltaics, high-power electronics, and photocatalysis. This project employs an integrated theoretical and experimental approach to rapidly discover new high-performance semiconductors based on perovskite-framework oxides and oxynitrides containing bismuth. This family of promising compounds represents a vast composition space that remains largely unexplored. The project combines first-principles quantum-mechanical calculations with materials informatics to rapidly predict promising new semiconductors. Advanced synthesis and characterization techniques are used to optimize the microstructure and improve the performance of these semiconductors. Education and outreach components of the project focus on preparing both graduate and undergraduate students for the workforce needed to realize advanced energy technologies. The project leverages a co-advised doctoral program, the McDonnell Academy Global Energy and Environmental Partnership (MAGEEP), to provide graduate students with an international experience to interact with their counterparts from universities in developing countries, where energy issues play a vital role. TECHNICAL DETAILS: The project seeks to discover high-performance and defect-tolerant semiconductors that can replace unstable and toxic lead-halide perovskites in a variety of applications including in high-efficiency solar cells and photocatalysis. This is carried out by replacing the toxic lead cation in 2+ oxidation state with isoelectronic bismuth cation in 3+ oxidation state, without compromising the advantages presented by the perovskite framework. This interdisciplinary research combines first-principles density-functional theory calculations with materials informatics to accelerate the discovery of stable Bi-based perovskites with targeted band gap and electronic structure. The research employs a combination of solid-state chemistry, wet-chemistry and aerosol-based synthesis techniques to synthesize the predicted materials and control their microstructure. It uses a variety of characterization techniques including aberration-corrected scanning transmission electron microscope imaging and monochromated electron energy loss spectroscopy for atomic-scale characterization of the defects in the synthesized materials. Education aspects include training of undergraduate and graduate students including exposure to international students working on energy materials and the organization of summer workshops on nanomaterials for energy applications for K-12 teachers and students from schools in St. Louis and the surrounding region.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(34)
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科研奖励(0)
会议论文
Anion order in oxysulfide perovskites: origins and implications
硫氧化物钙钛矿中的阴离子顺序:起源和影响
DOI: 10.1038/s41524-020-0338-1
发表时间: 2020
期刊: npj Computational Materials
影响因子: 9.7
作者: [Pilania, Ghanshyam, Ghosh, Ayana, Hartman, Steven T., Mishra, Rohan, Stanek, Christopher R., Uberuaga, Blas P.]
通讯作者: Uberuaga, Blas P.
Layered electrides as fluoride intercalation anodes
作为氟化物插层阳极的层状电子化合物
DOI: --
发表时间: 2020
期刊: Journal of materials chemistry
影响因子: --
作者: [Steven T. Hartman, Rohan Mishra]
通讯作者: Steven T. Hartman, Rohan Mishra
Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films
Co2FexMn1-xSi 薄膜中富锰界面相的形成
DOI: 10.1016/j.jmmm.2024.171884
发表时间: 2024
期刊: Journal of Magnetism and Magnetic Materials
影响因子: 2.7
作者: [Ming Law, Ka, Thind, Arashdeep S., Pendharkar, Mihir, Patel, Sahil J., Phillips, Joshua J., Palmstrom, Chris J., Gazquez, Jaume, Borisevich, Albina, Mishra, Rohan, Hauser, Adam J.]
通讯作者: Hauser, Adam J.
DOI: 10.1002/adma.201805047
发表时间: 2018-12
期刊: Advanced Materials
影响因子: 29.4
作者: [A. Thind;G. Luo;J. Hachtel;Maria V. Morrell;S. Cho;A. Borisevich;J. Idrobo;Y. Xing;Rohan Mishra]
通讯作者: A. Thind;G. Luo;J. Hachtel;Maria V. Morrell;S. Cho;A. Borisevich;J. Idrobo;Y. Xing;Rohan Mishra
22
    CAREER: Rational Design of Ferroelectric Semiconductors
    • 批准号:
      2145797
    • 项目类别:
      Continuing Grant
    • 资助金额:
      $58.88万
    • 财政年份:
      2022
    • 负责人:
      Rohan Mishra
    • 依托单位:
    Collaborative Research: Revealing the Role of Structural Modulations on the Electronic Properties of Hexagonal Chalcogenide Perovskite Semiconductors
    • 批准号:
      2122070
    • 项目类别:
      Continuing Grant
    • 资助金额:
      $32.0万
    • 财政年份:
      2021
    • 负责人:
      Rohan Mishra
    • 依托单位:
    EAGER: Collaborative Research: Epitaxial Stabilization of Polar Epsilon-phase Gallium Oxide Thin Films
    • 批准号:
      1931610
    • 项目类别:
      Standard Grant
    • 资助金额:
      $6.5万
    • 财政年份:
      2019
    • 负责人:
      Rohan Mishra
    • 依托单位:
    DMREF: Collaborative Research: Transforming Electrocatalysis using Rational Design of Two Dimensional Materials
    • 批准号:
      1729787
    • 项目类别:
      Standard Grant
    • 资助金额:
      $36.12万
    • 财政年份:
      2017
    • 负责人:
      Rohan Mishra
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    国内基金
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    • 批准号:
      --
    • 项目类别:
      外国青年学者研 究基金项目
    • 资助金额:
      --
    • 批准年份:
      2024
    • 负责人:
      Manshu Khanna
    • 依托单位:
    基于“Design-Build-Test”循环策略的新型紫色杆菌素组合生物合成研究
    • 批准号:
    • 项目类别:
      省市级项目
    • 资助金额:
      --
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      2021
    • 负责人:
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    在噪声和约束条件下的unitary design的理论研究
    • 批准号:
      12147123
    • 项目类别:
      专项基金项目
    • 资助金额:
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    • 批准年份:
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