Quantum Interfaces of Dissimilar Materials

异种材料的量子界面

• 批准号: 1809054
• 负责人: Gregory Salamo
• 金额: $ 39.37万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-07-15 至 2022-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1809054&HistoricalAwards=false
• 关键词: Quantum; Interfaces; Dissimilar; Materials

Nontechnical description: This project is focused on investigating new quantum material properties that are provoked when two materials with dissimilar properties, such as, semiconductor and ferroelectric materials, are coupled together. One may expect to find the resulting material properties to be the sum of the properties of each material. However, this situation changes when the layers of each material are only a few atoms thick, creating a quantum interface material. For example, whereas short-range bonding between atoms dominates the material properties of semiconductors, in ferroelectrics the bonding between atoms is predominantly long-range. Combining the two materials at one interface creates a hybrid bonding that forms exciting new quantum material functionalities. The polarization in the ferroelectric oxide allows tuning and controlling the semiconductor electronic and optical properties for smaller and faster electronics. Likewise, mobile charges in the semiconductor is exploited to affect the polarization in the ferroelectric, creating the opportunity for smaller and faster memory storage devices. Basically, the interface is a "new quantum material" that creates new intriguing possibilities to investigate quantum effects, such as the fractional quantum Hall effect, as well as the manipulation of electrons, control of electrical current flow, electron spin, and the material interaction with light. These are the fundamental ingredients for novel scientific and technological opportunities for new discoveries and exciting new products in electronics and photonics. This research provides opportunities to graduate and undergraduate students who bring their excitement to regional middle school classrooms and public places, i.e. Arkansas Shopping Mall, to stimulate inquiry into science education. Recognizing the need for women and minorities in science, recruitment for students is at the annual National Black and Hispanic National meeting and Materials Research Society (MRS) meetings.Technical description: The project is investigating the properties of semiconductor-transition metal oxide quantum interfaces at the monolayer scale. The challenge arises mostly because of the difficulty of epitaxial growth with the disparity of structural properties and lattice parameters. This challenge, however, has proven to be very much ideal for the progress made in layer-by-layer growth by molecular beam epitaxy, with in-situ characterization capability for atomic-scale scanning tunneling microscopy and spectroscopy, and piezoelectric force microscopy, and is the approach taken in this proposal. For example, the research team is growing monolayers of: GaAs (001), InGaAs (001) and GaAsP (001) on BaTiO3 (110) and BiFeO3 (110) grown on SrTiO3 (110), to produce transition metal-semiconductor quantum interfaces. For analysis, the team is using scanning tunneling and piezoelectric force microscopy for morphology and spectroscopy to provide real-time data, by providing interactive feedback, needed to understand the interface from single monolayers to 10-20 nm thicknesses. For the interface between dissimilar materials, the team is evaluating the effects of the local density of states, polarization screening, surface reconstruction, electric and magnetic field coupling, bonding between sp-electrons and d-electrons, fractional quantum Hall effect, localization of charge, and lattice match, mismatch and strain on the interface electronic and photonic properties. As a more high-risk exciting opportunity the team is using high quality semiconductor/transition metal oxide and transition metal oxide/semiconductor interfaces, to stack interfaces, to form a superlattice of quantum interfaces with novel properties.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性描述：该项目的重点是研究当两种具有不同性质的材料（如半导体和铁电材料）耦合在一起时激发的新量子材料性质。人们可能会发现，所得到的材料性质是每种材料性质的总和。然而，当每种材料的层只有几个原子厚时，这种情况就会改变，从而产生量子界面材料。例如，原子之间的短程键合主导了半导体的材料特性，而在铁电体中，原子之间的键合主要是长程键合。将两种材料在一个界面上结合，产生了一种混合键合，形成了令人兴奋的新量子材料功能。铁电氧化物中的极化允许调谐和控制半导体电子和光学性质以用于更小和更快的电子器件。同样，半导体中的移动的电荷被利用来影响铁电体中的极化，从而为更小和更快的存储器存储设备创造了机会。基本上，该界面是一种“新量子材料”，为研究量子效应（例如分数量子霍尔效应）以及电子操纵、电流流动控制、电子自旋以及材料与光的相互作用创造了新的有趣的可能性。这些都是新的科学和技术机会的基本要素，这些机会是电子和光子学领域的新发现和令人兴奋的新产品。这项研究提供了机会，研究生和本科生谁把他们的兴奋区域中学教室和公共场所，即阿肯色州购物中心，以刺激探究科学教育。认识到妇女和少数民族在科学的需要，招收学生是在每年的全国黑人和西班牙裔全国会议和材料研究学会（MRS）meetings.Technical说明：该项目正在调查的性质超导过渡金属氧化物量子界面在单层规模。这一挑战主要是因为外延生长的困难与结构特性和晶格参数的差异。然而，这一挑战已被证明是非常理想的进展，在逐层生长的分子束外延，原位表征能力的原子尺度扫描隧道显微镜和光谱学，和压电力显微镜，是在本提案中采取的方法。例如，研究小组正在BaTiO 3（110）和SrTiO 3（110）上生长的BiFeO 3（110）上生长GaAs（001），InGaAs（001）和GaAsP（001）的单层，以产生过渡金属-半导体量子界面。为了进行分析，该团队正在使用扫描隧道和压电力显微镜进行形态学和光谱学分析，通过提供交互式反馈来提供实时数据，以了解从单层到10-20 nm厚度的界面。对于不同材料之间的界面，该团队正在评估局域态密度，极化屏蔽，表面重构，电场和磁场耦合，sp电子和d电子之间的键合，分数量子霍尔效应，电荷局部化以及晶格匹配，失配和应变对界面电子和光子特性的影响。作为一个更高风险的令人兴奋的机会，该团队正在使用高质量的半导体/过渡金属氧化物和过渡金属氧化物/半导体界面，堆叠界面，形成具有新颖特性的量子界面超晶格。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

GaAs epitaxial growth on R-plane sapphire substrate

R面蓝宝石衬底上的GaAs外延生长

• DOI: 10.1016/j.jcrysgro.2020.125848
• 发表时间: 2020
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: Saha, Samir K.;Kumar, Rahul;Kuchuk, Andrian;Stanchu, Hryhorii;Mazur, Yuriy I.;Yu, Shui-Qing;Salamo, Gregory J.
• 通讯作者: Salamo, Gregory J.

Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix

• DOI: 10.1063/1.5053412
• 发表时间: 2018-12
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Rahul Kumar;Y. Maidaniuk;A. Kuchuk;S. Saha;Pijush K. Ghosh;Y. Mazur;M. Ware;G. Salamo

Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy

• DOI: 10.1063/5.0039107
• 发表时间: 2021-02
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Y. Maidaniuk;R. Kumar;Y. Mazur;A. Kuchuk;M. Benamara;P. Lytvyn;G. Salamo

GaAs layer on c-plane sapphire for light emitting sources

用于发光源的 c 面蓝宝石上的 GaAs 层

• DOI: 10.1016/j.apsusc.2020.148554
• 发表时间: 2021
• 期刊: Applied Surface Science
• 影响因子: 6.7
• 作者: Kumar, Rahul;Saha, Samir K.;Kuchuk, Andrian;Maidaniuk, Yurii;de Oliveira, Fernando Maia;Yan, Qigeng;Benamara, Mourad;Mazur, Yuriy I.;Yu, Shui-Qing;Salamo, Gregory J.
• 通讯作者: Salamo, Gregory J.

Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on a Ge/Si(001) substrate

Ge/Si(001) 基底上应变 Ge1-xSnx 薄膜的直接和间接带隙的光电压光谱

• 发表时间: 2019
• 期刊: Acta materialia
• 影响因子: 9.4
• 作者: S.V. Kondratenko Yu.V. Hyrka, Yu.I. Mazur