Integrate high Z and low Z compound semiconductors for 60 keV spectrometry

集成高 Z 和低 Z 化合物半导体,用于 60 keV 光谱测定

基本信息

项目摘要

Non-Technical:The detection and identification of radioactive isotopes is important for national security and medical imaging. Different isotopes can be distinguished from one another by the energy of gamma rays that they emit during radioactive decay. Efficient, high-resolution detection of gamma rays requires semiconductors with high atomic number (Z). However, these materials have low band-gaps and device based on such materials have high electronic noise. A high electric field in the junction regions of such detectors significantly increases this noise. Precision radiation detectors therefore require significant cooling to reduce electronic noise. The extensive cooling required can be both expensive and unreliable. The investigators propose to achieve gamma-ray detection with high energy resolution in a compact package at room temperature. These detectors will integrate a high-Z low band-gap semiconductor with a low-Z, high band-gap semiconductor. The high-Z material detects gamma rays efficiently and the low-Z material provides low electronic noise in the high field region. This approach exploits the relative benefits of the two materials. The team brings world-renowned expertise in growth of semiconductor materials and fabrication of gamma-ray detectors to bear on the challenges associated with this project. The multidisciplinary research team has an established track record of investing in underrepresented minority graduate students and undergraduate researchers, including women. The proposed work will form the basis for a new program at UCLA in which students take part in cross-disciplinary workshops and laboratory tours. This program aims to bridge the gaps between material science, electrical engineering, and biomedical physics.Technical:A fundamental need exists for compact, low-power and high-resolution radiation detectors that can operate near room temperature to provide X-ray to gamma-ray spectroscopy for civil security, radiation surveillance, and radiological imaging applications. By combining world-renowned expertise in epitaxial growth and device fabrication of III-As/Sb structures, sensing devices, and gamma-ray detection, this project plans to achieve direct detection of 60 keV gamma-rays with energy resolution 1% in a compact package. A novel integration of high atomic number (Z) gamma-ray absorbers with low-noise junction regions is proposed to construct an energy-sensitive radiation detector that will exploit the relative benefits of the two materials, to achieve high energy resolution gamma-ray detection with low background noise. The technical approach is designed and organized to achieve the concept of integrating gamma ray detector structures, and will deliver comprehensive experimental investigations of material and device parameters that are of fundamental importance to the field of X-ray and gamma-ray spectroscopy. A team is brought together with a unique combination of experience and knowledge to bear on the challenges associated with this project. The broader impacts arise in part from the multidisciplinary nature of the research team, which has an established track record of investing in underrepresented minority graduate students and undergraduate researchers, including women. The proposed work will form the basis for a new program at UCLA in which students take part in cross-disciplinary workshops and laboratory tours aimed at bridging the gaps between material science, electrical engineering, and biomedical physics.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术性:放射性同位素的检测和鉴定对国家安全和医学成像很重要。不同的同位素可以通过它们在放射性衰变过程中释放的伽马射线的能量来区分彼此。高效、高分辨率的伽马射线探测需要具有高原子序数(Z)的半导体。然而,这些材料具有低带隙,并且基于这些材料的器件具有高电子噪声。在这种探测器的结区内的高电场显著地增加了这种噪声。因此,精密辐射探测器需要大量冷却以减少电子噪声。所需的大量冷却既昂贵又不可靠。研究人员建议在室温下在一个紧凑的包装中实现高能量分辨率的伽马射线探测。这些探测器将集成高z低带隙半导体和低z高带隙半导体。高z材料能有效地探测伽马射线,而低z材料在高场区域提供低电子噪声。这种方法利用了两种材料的相对优势。该团队在半导体材料的发展和伽马射线探测器的制造方面带来了世界知名的专业知识,以应对与该项目相关的挑战。多学科研究团队在投资于代表性不足的少数民族研究生和本科生研究人员(包括女性)方面有着良好的记录。这项提议的工作将成为加州大学洛杉矶分校一个新项目的基础,在这个项目中,学生们将参加跨学科研讨会和实验室参观。该计划旨在弥合材料科学,电气工程和生物医学物理学之间的差距。技术方面:人们对紧凑型、低功耗和高分辨率辐射探测器的基本需求是存在的,这种探测器可以在室温附近工作,为民用安全、辐射监视和放射成像应用提供x射线到伽马射线光谱。通过结合世界知名的III-As/Sb结构外延生长和器件制造、传感器件和伽马射线探测方面的专业知识,该项目计划在紧凑的封装中实现60 keV能量分辨率为1%的伽马射线的直接探测。提出了一种高原子序数(Z)伽玛射线吸收体与低噪声结区的新型集成,以构建一种能量敏感辐射探测器,利用两种材料的相对优势,实现低背景噪声下的高能量分辨率伽玛射线探测。该技术方法的设计和组织旨在实现集成伽马射线探测器结构的概念,并将提供对x射线和伽马射线光谱学领域至关重要的材料和器件参数的全面实验研究。一个团队汇集了独特的经验和知识来承担与这个项目相关的挑战。更广泛的影响部分来自研究团队的多学科性质,该团队在投资于代表性不足的少数民族研究生和本科生研究人员(包括女性)方面有着良好的记录。这项提议的工作将成为加州大学洛杉矶分校一个新项目的基础,在这个项目中,学生们将参加跨学科的研讨会和实验室参观,旨在弥合材料科学、电气工程和生物医学物理学之间的差距。该奖项反映了美国国家科学基金会的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability
  • DOI:
    10.1109/jqe.2021.3058356
  • 发表时间:
    2021-04
  • 期刊:
  • 影响因子:
    2.5
  • 作者:
    Jamal Ahmed;S. Xie;B. Liang;Xin Yi;X. Jin;M. Kesaria;J. David;D. Huffaker
  • 通讯作者:
    Jamal Ahmed;S. Xie;B. Liang;Xin Yi;X. Jin;M. Kesaria;J. David;D. Huffaker
Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP
Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection
  • DOI:
    10.1002/adom.201900107
  • 发表时间:
    2019-03
  • 期刊:
  • 影响因子:
    9
  • 作者:
    B. Juang;Andrew Chen;D. Ren;B. Liang;D. Prout;A. Chatziioannou;D. Huffaker
  • 通讯作者:
    B. Juang;Andrew Chen;D. Ren;B. Liang;D. Prout;A. Chatziioannou;D. Huffaker
Optimization of surface passivation for suppressing leakage current in GaSb PIN devices
  • DOI:
    10.1049/el.2020.2063
  • 发表时间:
    2020-11
  • 期刊:
  • 影响因子:
    1.1
  • 作者:
    Y. Ji;K. M. Azizur-Rahman;T. Chang;B. Juang;D. Prout;B. Liang;D. Huffaker;A. Chatziioannou
  • 通讯作者:
    Y. Ji;K. M. Azizur-Rahman;T. Chang;B. Juang;D. Prout;B. Liang;D. Huffaker;A. Chatziioannou
Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al 2 O 3 passivation
Al 2 O 3 钝化显着抑制 GaSb/AlAsSb 异质结构的表面泄漏
  • DOI:
    10.7567/1347-4065/ab3909
  • 发表时间:
    2019
  • 期刊:
  • 影响因子:
    1.5
  • 作者:
    Chen, Andrew;Juang, Bor-Chau;Ren, Dingkun;Liang, Baolai;Prout, David L.;Chatziioannou, Arion F.;Huffaker, Diana L.
  • 通讯作者:
    Huffaker, Diana L.
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