Integrated quantum photonics using van der Waals materials

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Technologies that rely on and exploit the quantum properties of light and matter are touted as the next phaseof the modern industrial revolution. Light has become the preferred medium for information transfer inquantum technologies due to its high speed and exceptional noise properties, with single photons acting asthe most basic building blocks. However, the realization of robust, device-compatible, room-temperaturesingle photon sources that can be activated and controlled on demand has been a major hurdle. Althoughthere have been different material systems that have shown single photon emission, they operate at lowtemperature or at incompatible wavelengths, and are often hard to integrate with conventional photonicmaterials or CMOS technology. To address this challenge, this project aims to develop single photonemitters based on cavity-coupled van der Waals (vdW) materials. Specifically, the program will focus onhexagonal boron nitride, a wide bandgap semiconductor that can host optically active point defects withemission in the visible and near infra-red. Combining defect engineering and "pick-and-place" techniques,the project will develop a range of light-confining hybrid structures designed to enhance light collectionand light emission from single photon emitters as well as increase the strength of light-matter interaction.The overarching goal is to develop the key building blocks for realizing quantum photonic devices basedon vdW materials.Technical Abstract:The development of quantum photonic technologies that can operate at elevated temperatures, are CMOScompatible, and can be integrated with conventional photonics is highly desirable. This project addressesprecisely this need through the use of monolayer or few-layer vdW materials integrated with siliconnitride photonic platforms where we exploit the unique strengths of the two material systems. vdWmaterials are a highly attractive platform for active components in quantum photonics due their largelight-mater interaction strength, compatibility with a variety of substrates, and pick-and-place fabricationtechniques. In particular, hexagonal boron nitride has a wide bandgap (6 eV), which allows for a broadlyaccessible spectral range and mid gap defect states. Furthermore, owing to the few-layer vdW structure,these systems show extreme susceptibility to strain and the dielectric environment, which will beexploited to control defect activation and integration with nanophotonic structures such as microresonatorsand waveguides. Silicon nitride, already recognized as an excellent material for passivephotonic devices due to its low loss and mature fabrication protocols will form the platform for realizingthe quantum photonic chips. Specific program goals include: (i) Deterministic engineering of defectstates in hBN for single photon emission, and (ii) Integration of emitters into micro-resonators and hybridcavity systems for enhancing spontaneous emission and achieving the strong coupling regime.The program will help train students from diverse backgrounds in the emerging interdisciplinary field ofquantum optoelectronics. A highlight among the planned outreach activities is a hands-on quantumtechnologies workshop for undergraduate students at City College.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.