Integrated quantum photonics using van der Waals materials

使用范德华材料的集成量子光子学

• 批准号: 1906096
• 负责人: Vinod Menon
• 金额: $ 38.62万
• 依托单位: CUNY City College
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-07-01 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1906096&HistoricalAwards=false
• 关键词: Integrated; quantum; photonics; using; van

Technologies that rely on and exploit the quantum properties of light and matter are touted as the next phaseof the modern industrial revolution. Light has become the preferred medium for information transfer inquantum technologies due to its high speed and exceptional noise properties, with single photons acting asthe most basic building blocks. However, the realization of robust, device-compatible, room-temperaturesingle photon sources that can be activated and controlled on demand has been a major hurdle. Althoughthere have been different material systems that have shown single photon emission, they operate at lowtemperature or at incompatible wavelengths, and are often hard to integrate with conventional photonicmaterials or CMOS technology. To address this challenge, this project aims to develop single photonemitters based on cavity-coupled van der Waals (vdW) materials. Specifically, the program will focus onhexagonal boron nitride, a wide bandgap semiconductor that can host optically active point defects withemission in the visible and near infra-red. Combining defect engineering and "pick-and-place" techniques,the project will develop a range of light-confining hybrid structures designed to enhance light collectionand light emission from single photon emitters as well as increase the strength of light-matter interaction.The overarching goal is to develop the key building blocks for realizing quantum photonic devices basedon vdW materials.Technical Abstract:The development of quantum photonic technologies that can operate at elevated temperatures, are CMOScompatible, and can be integrated with conventional photonics is highly desirable. This project addressesprecisely this need through the use of monolayer or few-layer vdW materials integrated with siliconnitride photonic platforms where we exploit the unique strengths of the two material systems. vdWmaterials are a highly attractive platform for active components in quantum photonics due their largelight-mater interaction strength, compatibility with a variety of substrates, and pick-and-place fabricationtechniques. In particular, hexagonal boron nitride has a wide bandgap (6 eV), which allows for a broadlyaccessible spectral range and mid gap defect states. Furthermore, owing to the few-layer vdW structure,these systems show extreme susceptibility to strain and the dielectric environment, which will beexploited to control defect activation and integration with nanophotonic structures such as microresonatorsand waveguides. Silicon nitride, already recognized as an excellent material for passivephotonic devices due to its low loss and mature fabrication protocols will form the platform for realizingthe quantum photonic chips. Specific program goals include: (i) Deterministic engineering of defectstates in hBN for single photon emission, and (ii) Integration of emitters into micro-resonators and hybridcavity systems for enhancing spontaneous emission and achieving the strong coupling regime.The program will help train students from diverse backgrounds in the emerging interdisciplinary field ofquantum optoelectronics. A highlight among the planned outreach activities is a hands-on quantumtechnologies workshop for undergraduate students at City College.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

依靠并利用光和物质的量子特性的技术被吹捧为现代工业革命的下一个阶段。光由于其高速和特殊的噪声特性而成为信息传输量子技术的首选媒介，单光子作为最基本的构建块。然而，实现鲁棒的、设备兼容的、可按需激活和控制的室温单光子源一直是一个主要障碍。虽然已经有不同的材料系统显示出单光子发射，但它们在低温或不相容的波长下工作，并且通常难以与传统的光子材料或CMOS技术集成。为了应对这一挑战，该项目旨在开发基于腔耦合范德华（vdW）材料的单光子发射器。具体来说，该项目将重点关注六方氮化硼，这是一种宽带隙半导体，可以承载具有可见光和近红外任务的光学活性点缺陷。结合缺陷工程和“拾取-放置”技术，该项目将开发一系列限制光的混合结构，旨在增强单光子发射器的光收集和光发射，并增加光-物质相互作用的强度。总体目标是开发实现基于vdW材料的量子光子器件的关键构建块。技术摘要：开发可在高温下工作、可与cmos兼容并可与传统光子学集成的量子光子技术是人们迫切需要的。该项目通过使用单层或几层vdW材料与氮化硅光子平台集成，利用两种材料系统的独特优势，精确地解决了这一需求。vdw材料是量子光子学中一个非常有吸引力的有源元件平台，因为它们具有大的光物质相互作用强度，与各种衬底的兼容性以及拾取和放置制造技术。特别地，六方氮化硼具有宽的带隙（6 eV），这允许宽的可达光谱范围和中隙缺陷状态。此外，由于低层vdW结构，这些系统对应变和介电环境表现出极大的敏感性，这将被用于控制缺陷激活和与微谐振器和波导等纳米光子结构的集成。氮化硅，由于其低损耗和成熟的制造工艺，已经被公认为无源光子器件的优秀材料，将形成实现量子光子芯片的平台。具体的计划目标包括：(i) hBN单光子发射缺陷态的确定性工程，以及（ii）将发射器集成到微谐振器和混合腔系统中，以增强自发发射并实现强耦合状态。该项目将帮助培养来自不同背景的学生在新兴的量子光电子跨学科领域。在计划的推广活动中，一个亮点是为城市学院的本科生举办的量子技术实践研讨会。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Investigation of photon emitters in Ce-implanted hexagonal boron nitride

• DOI: 10.1364/ome.434083
• 发表时间: 2021-09
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: Gabriel I. L'opez-Morales;Mingxing Li;A. Hampel;S. Satapathy;N. Proscia;H. Jayakumar;A. Lozovoi;D. Pagliero;G. López;V. Menon;Johannes Flick;C. Meriles

Room-temperature single photon emitters in cubic boron nitride nanocrystals

立方氮化硼纳米晶体中的室温单光子发射器

• DOI: 10.1364/ome.386791
• 发表时间: 2020
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: López-Morales, Gabriel I.;Almanakly, Aziza;Satapathy, Sitakanta;Proscia, Nicholas V.;Jayakumar, Harishankar;Khabashesku, Valery N.;Ajayan, Pulickel M.;Meriles, Carlos A.;Menon, Vinod M.
• 通讯作者: Menon, Vinod M.

Ab-initio investigation of Er3+ defects in tungsten disulfide

• DOI: 10.1016/j.commatsci.2021.111041
• 发表时间: 2021-11
• 期刊: Computational Materials Science
• 影响因子: 3.3
• 作者: Gabriel I. L'opez-Morales;A. Hampel;G. López;V. Menon;Johannes Flick;C. Meriles

Microcavity-coupled emitters in hexagonal boron nitride

• DOI: 10.1515/nanoph-2020-0187
• 发表时间: 2019-06
• 期刊: Nanophotonics
• 影响因子: 7.5
• 作者: N. Proscia;H. Jayakumar;X. Ge;Gabriel I. L'opez-Morales;Zav Shotan;Weidong Zhou;C. Meriles;V. Menon

Optical isolator based on chiral light-matter interactions in a ring resonator integrating a dichroic magneto-optical material

• DOI: 10.1063/5.0057558
• 发表时间: 2021-06-14
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Kawaguchi, Yuma;Li, Mengyao;Khanikaev, Alexander B.
• 通讯作者: Khanikaev, Alexander B.