Integrated quantum photonics using van der Waals materials
Integrated quantum photonics using van der Waals materials
批准号:
1906096
负责人:
Vinod Menon
金额:
$38.62万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-07-01 至 2023-06-30
中文摘要
依赖和利用光和物质的量子特性的技术被吹捧为现代工业革命的下一阶段。光由于其高速和特殊的噪声特性,已成为信息传输量子技术的首选介质,其中单光子是最基本的构建块。然而,实现强大的,设备兼容的,室温单光子源,可以激活和控制的需求一直是一个主要的障碍。尽管已经有不同的材料系统显示出单光子发射,但它们在低温或不兼容的波长下工作,并且通常难以与传统的光子材料或CMOS技术集成。为了应对这一挑战,本项目旨在开发基于腔耦合货车德瓦尔斯(vdW)材料的单光子发射器。具体来说,该计划将集中在六方氮化硼,宽带隙半导体,可以主机光学活性点缺陷与发射在可见光和近红外线。结合缺陷工程和“拾取-放置”技术,该项目将开发一系列光限制混合结构,旨在增强单光子发射器的光收集和光发射,以及增加光-物质相互作用的强度。总体目标是开发实现基于vdW材料的量子光子器件的关键构建模块。技术摘要:量子光子技术的发展,可以在高温下工作,CMOS兼容,并可以与传统的光子集成是非常可取的。该项目通过使用单层或少层vdW材料与氮化硅光子平台集成来满足这一需求,我们利用这两种材料系统的独特优势。vdw材料由于其大的光-物质相互作用强度、与各种衬底的兼容性以及拾取和放置制造技术而成为量子光子学中的有源元件的高度有吸引力的平台。特别地,六方氮化硼具有宽带隙(6 eV),这允许宽可达的光谱范围和中间带隙缺陷态。此外,由于少层vdW结构,这些系统显示出对应变和介电环境的极端敏感性,这将被利用来控制缺陷激活和与纳米光子结构如微谐振器和波导的集成。氮化硅由于其低损耗和成熟的制造工艺,已经被公认为是一种优良的无源光子器件材料,它将成为实现量子光子芯片的平台。具体方案目标包括:(i)单光子发射hBN中缺陷态的确定性工程,以及(ii)将发射器集成到微谐振器和混合腔系统中,以增强自发辐射并实现强耦合机制。该计划将帮助培养来自不同背景的学生,在新兴的交叉学科领域量子光电子学。计划中的推广活动中的一个亮点是为城市学院的本科生举办的实践量子技术研讨会。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Technologies that rely on and exploit the quantum properties of light and matter are touted as the next phaseof the modern industrial revolution. Light has become the preferred medium for information transfer inquantum technologies due to its high speed and exceptional noise properties, with single photons acting asthe most basic building blocks. However, the realization of robust, device-compatible, room-temperaturesingle photon sources that can be activated and controlled on demand has been a major hurdle. Althoughthere have been different material systems that have shown single photon emission, they operate at lowtemperature or at incompatible wavelengths, and are often hard to integrate with conventional photonicmaterials or CMOS technology. To address this challenge, this project aims to develop single photonemitters based on cavity-coupled van der Waals (vdW) materials. Specifically, the program will focus onhexagonal boron nitride, a wide bandgap semiconductor that can host optically active point defects withemission in the visible and near infra-red. Combining defect engineering and "pick-and-place" techniques,the project will develop a range of light-confining hybrid structures designed to enhance light collectionand light emission from single photon emitters as well as increase the strength of light-matter interaction.The overarching goal is to develop the key building blocks for realizing quantum photonic devices basedon vdW materials.Technical Abstract:The development of quantum photonic technologies that can operate at elevated temperatures, are CMOScompatible, and can be integrated with conventional photonics is highly desirable. This project addressesprecisely this need through the use of monolayer or few-layer vdW materials integrated with siliconnitride photonic platforms where we exploit the unique strengths of the two material systems. vdWmaterials are a highly attractive platform for active components in quantum photonics due their largelight-mater interaction strength, compatibility with a variety of substrates, and pick-and-place fabricationtechniques. In particular, hexagonal boron nitride has a wide bandgap (6 eV), which allows for a broadlyaccessible spectral range and mid gap defect states. Furthermore, owing to the few-layer vdW structure,these systems show extreme susceptibility to strain and the dielectric environment, which will beexploited to control defect activation and integration with nanophotonic structures such as microresonatorsand waveguides. Silicon nitride, already recognized as an excellent material for passivephotonic devices due to its low loss and mature fabrication protocols will form the platform for realizingthe quantum photonic chips. Specific program goals include: (i) Deterministic engineering of defectstates in hBN for single photon emission, and (ii) Integration of emitters into micro-resonators and hybridcavity systems for enhancing spontaneous emission and achieving the strong coupling regime.The program will help train students from diverse backgrounds in the emerging interdisciplinary field ofquantum optoelectronics. A highlight among the planned outreach activities is a hands-on quantumtechnologies workshop for undergraduate students at City College.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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Room-temperature single photon emitters in cubic boron nitride nanocrystals
立方氮化硼纳米晶体中的室温单光子发射器
DOI:
10.1364/ome.386791
发表时间:
2020
期刊:
Optical Materials Express
影响因子:
2.8
作者:
[López-Morales, Gabriel I., Almanakly, Aziza, Satapathy, Sitakanta, Proscia, Nicholas V., Jayakumar, Harishankar, Khabashesku, Valery N., Ajayan, Pulickel M., Meriles, Carlos A., Menon, Vinod M.]
通讯作者:
Menon, Vinod M.
DOI:
10.1016/j.commatsci.2021.111041
发表时间:
2021-11
期刊:
Computational Materials Science
影响因子:
3.3
作者:
[Gabriel I. L'opez-Morales;A. Hampel;G. López;V. Menon;Johannes Flick;C. Meriles]
通讯作者:
Gabriel I. L'opez-Morales;A. Hampel;G. López;V. Menon;Johannes Flick;C. Meriles
DOI:
10.1364/ome.434083
发表时间:
2021-09
期刊:
Optical Materials Express
影响因子:
2.8
作者:
[Gabriel I. L'opez-Morales;Mingxing Li;A. Hampel;S. Satapathy;N. Proscia;H. Jayakumar;A. Lozovoi;D. Pagliero;G. López;V. Menon;Johannes Flick;C. Meriles]
通讯作者:
Gabriel I. L'opez-Morales;Mingxing Li;A. Hampel;S. Satapathy;N. Proscia;H. Jayakumar;A. Lozovoi;D. Pagliero;G. López;V. Menon;Johannes Flick;C. Meriles
DOI:
10.1515/nanoph-2020-0187
发表时间:
2019-06
期刊:
Nanophotonics
影响因子:
7.5
作者:
[N. Proscia;H. Jayakumar;X. Ge;Gabriel I. L'opez-Morales;Zav Shotan;Weidong Zhou;C. Meriles;V. Menon]
通讯作者:
N. Proscia;H. Jayakumar;X. Ge;Gabriel I. L'opez-Morales;Zav Shotan;Weidong Zhou;C. Meriles;V. Menon
DOI:
10.1063/5.0057558
发表时间:
2021-06-14
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Kawaguchi, Yuma, Li, Mengyao, Khanikaev, Alexander B.]
通讯作者:
Khanikaev, Alexander B.
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国内基金
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