GOALI: BGaAs and BGaInAs Detectors Lattice-Matched to Silicon

GOALI：与硅晶格匹配的 BGaAs 和 BGaInAs 探测器

• 批准号: 1933836
• 负责人: Seth Bank
• 金额: $ 37万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-09-01 至 2022-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1933836&HistoricalAwards=false
• 关键词: GOALI; BGaAs; BGaInAs; Detectors; Lattice

Nontechnical:Integrated circuits based on silicon have transformed modern life. They are the basis of microelectronics and digital computers. Silicon has also been used for optoelectronics devices that convert light into electricity, such as solar cells and photodetectors, or electricity into light, such as light-emitting diodes and lasers. However, silicon is sensitive only to visible light and a limited portion of the infrared spectrum. Also, the speed with which silicon-based devices can detect light is fundamentally limited. This project will study a new family of boron-containing materials that are sensitive to a broader range of infrared light as well as greatly increased speed of detection. One key advantage of these materials is that their crystal structure is compatible with silicon. This allows for them to be grown as high-quality crystals directly on silicon and take advantage of the sophisticated silicon manufacturing infrastructure. This project will demonstrate several types of photodetectors, as well as determine the fundamental physical properties necessary to gauge their ultimate potential. Applications include autonomous vehicles, communication systems, and biomedical instrumentation. The project will also provide unique mentoring and research experiences for graduate, undergraduate, and high school students. Outreach activities will include inspiring K - 12 students through classroom visits, as well as events like Science Thursdays and the Edison Lecture Series.Technical:Monolithic integration of direct bandgap, lattice-matched, semiconductor alloys with silicon remains a holy grail of photonics for both lasers and photodetectors. The resulting devices would enable tremendous advances in functionality for silicon-based photonic integrated circuits, with applications ranging from imaging systems and laser radar, to telecommunications, chemical sensing, etc. Current approaches towards monolithic integration of direct bandgap materials on silicon suffer from a variety of challenges, and there is no clear path to the lattice-matched materials needed to address important emerging applications in the near- and mid-infrared. A solution to this critical challenge is proposed: one focused on BGaInAs photodetectors on silicon that could span cutoff wavelengths from 1 to 5 microns. It is underpinned by the commercial availability of GaP/Si substrates, as well as the team's recent success demonstrating (1) record high boron contents up to ~22% into GaAs, nearly sufficient to lattice-match with silicon, (2) prototype pn and pin BGa(In)As photodetectors and light emitting diodes on GaAs, and (3) successful initial growths of coherent direct bandgap BGaAs on GaP and GaP/Si. While the focus will be on realizing direct bandgap lattice-matched photodetectors, it is important to note this approach will be applicable to emitters as well. This project will couple the expertise of the University of Texas at Austin with molecular beam epitaxial growth and device fabrication of epitaxial BGa(In)As photodetectors with the mid-infrared nBn detector expertise of Amethyst Research Inc. to: (1) realize high-performance pn- and pin-junction photodetectors on silicon, (2) illuminate and quantify the accessible bandgaps and band alignments on silicon and GaAs, and (3) use these properties to design and demonstrate silicon-based nBn detectors in the 3-5 micron range.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性：基于硅的集成电路改变了现代生活。它们是微电子学和数字计算机的基础。硅还被用于将光转化为电能的光电器件，例如太阳能电池和光电探测器，或将电转化为光的器件，例如发光二极管和激光器。然而，硅仅对可见光和红外光谱的有限部分敏感。此外，硅基器件检测光的速度从根本上是有限的。该项目将研究一系列新的含硼材料，这些材料对更广泛的红外光敏感，并且大大提高了检测速度。这些材料的一个关键优点是它们的晶体结构与硅兼容。这使得它们能够直接在硅上生长为高质量晶体，并利用先进的硅制造基础设施。该项目将展示几种类型的光电探测器，并确定衡量其最终潜力所需的基本物理特性。应用包括自动驾驶车辆、通信系统和生物医学仪器。该项目还将为研究生、本科生和高中生提供独特的指导和研究经验。外展活动将包括通过课堂参观以及科学星期四和爱迪生系列讲座等活动来激励 K - 12 学生。技术：直接带隙、晶格匹配、半导体合金与硅的单片集成仍然是激光器和光电探测器光子学的圣杯。由此产生的器件将使硅基光子集成电路的功能取得巨大进步，其应用范围从成像系统和激光雷达到电信、化学传感等。目前在硅上直接带隙材料单片集成的方法面临着各种挑战，并且没有明确的途径来获得晶格匹配材料来解决近期和未来的重要新兴应用。 中红外。 针对这一关键挑战提出了一种解决方案：专注于硅上 BGaInAs 光电探测器，其截止波长可以跨越 1 至 5 微米。它的基础是 GaP/Si 衬底的商业可用性，以及该团队最近的成功证明：(1) GaAs 中硼含量高达约 22%，几乎足以与硅晶格匹配；(2) GaAs 上的原型 pn 和 pin BGa(In)As 光电探测器和发光二极管；(3) 相干直接带隙 BGaAs 的成功初始生长。 GaP 和 GaP/Si。 虽然重点是实现直接带隙晶格匹配光电探测器，但值得注意的是，这种方法也适用于发射器。 该项目将德克萨斯大学奥斯汀分校的专业知识与外延 BGa(In)As 光电探测器的分子束外延生长和器件制造的专业知识与 Amethyst Research Inc. 的中红外 nBn 探测器专业知识相结合，以：(1) 在硅上实现高性能 pn 和 pin 结光电探测器，(2) 照亮和量化可达到的带隙和能带排列 (3) 利用这些特性来设计和演示 3-5 微米范围内的硅基 nBN 探测器。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Reducing III-V avalanche photodiode noise through the introduction of boron

通过引入硼降低 III-V 雪崩光电二极管噪声

• 发表时间: 2021
• 期刊: Device Research Conference
• 作者: El-Jaroudi, Rasha H.;Dadey, Adam A.;Xue, Xingjun;Jones, Andrew H.;Guo, Bingtian;Campbell, Joe C.;Bank, Seth R.
• 通讯作者: Bank, Seth R.

Bowing of the band gap and spin-orbit splitting energy in BGaAs

• DOI: 10.1088/2053-1591/ab62e9
• 发表时间: 2019-12-01
• 期刊: MATERIALS RESEARCH EXPRESS
• 影响因子: 2.3
• 作者: Kudrawiec, R.;Polak, M. P.;Bank, S. R.
• 通讯作者: Bank, S. R.