Collaborative Research: Study of Strain-Dependent Auger Recombination Processes in III-V Materials Using Membranes

合作研究：使用膜研究 III-V 族材料中应变相关的俄歇复合过程

• 批准号: 1508603
• 负责人: Seth Bank
• 金额: $ 24.5万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-09-01 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1508603&HistoricalAwards=false
• 关键词: Collaborative; Research; Study; Strain; Dependent

Nontechnical Description: Auger recombination is a process that degrades the performance of III-V materials for optoelectronic devices, ranging from lasers and light-emitting diodes, to solar cells and photodetectors. In particular, lasers emitting light in the mid-infrared region of the electromagnetic spectrum are impacted heavily by Auger recombination. Mid-infrared lasers are important for sensing, free-space communications, and medicine. This collaborative research project between the University of Colorado at Boulder and the University of Texas at Austin seeks to understand and control the Auger recombination process in III-V materials to ultimately enhance the performance of mid-infrared lasers. The research efforts are well integrated with the educational activities. The efforts include providing interdisciplinary research opportunities to graduate and undergraduate students, integrating research findings with college coursework, and K-12 outreach through optics-related modules.Technical Description: Strain can greatly reduce the negative effects of Auger recombination in quantum confined active regions in III-V materials. However, the fundamental understanding of the strain effects on the recombination processes has been hindered by the critical thickness limitations imposed by strain, complicating analysis and often necessitating unrealistic approximations. The collaborative project takes an orthogonal approach to the challenges associated with understanding and characterizing recombination processes by examining the active strained regions of the materials. Specifically, semiconductor membranes made of III-V materials are released from their host substrate and bonded to a flexible polymer. The membranes are biaxially strained by stretching the polymer substrate in two dimensions to mimic the effect of biaxial strain from lattice-mismatched growth. This permits strain-dependent studies of Auger recombination using ultrafast spectroscopy on a single sample, isolating the intrinsic effects of strain from those due to compositional change or growth kinetics. This study could shed light on the roles of Auger and other loss processes in III-V material systems, an ongoing 30+ year debate across the device and materials communities, and enable high-efficiency diode lasers and light-emitting diodes in visible regime.

非技术描述：俄歇复合是一种降低用于光电子器件的III-V族材料性能的过程，从激光器和发光二极管到太阳能电池和光电探测器。特别地，在电磁光谱的中红外区域中发射光的激光器受到俄歇复合的严重影响。中红外激光器对于传感、自由空间通信和医学都很重要。位于博尔德的科罗拉多大学和位于奥斯汀的德克萨斯大学之间的这一合作研究项目旨在了解和控制III-V族材料中的俄歇复合过程，以最终提高中红外激光器的性能。研究工作与教育活动很好地结合在一起。这些努力包括为研究生和本科生提供跨学科的研究机会，将研究成果与大学课程相结合，并通过光学相关模块推广K-12。技术描述：应变可以大大减少III-V族材料中量子限制有源区中俄歇复合的负面影响。然而，应变对复合过程的影响的基本理解受到应变所施加的临界厚度限制的阻碍，使分析复杂化，并且经常需要不切实际的近似。该合作项目采用正交方法，通过检查材料的有源应变区域来理解和表征复合过程。具体地，由III-V族材料制成的半导体膜从其主衬底释放并结合到柔性聚合物。通过在两个维度上拉伸聚合物衬底来模拟来自晶格失配生长的双轴应变的效果，从而使膜双轴应变。这允许应变依赖的俄歇重组研究，使用超快光谱在一个单一的样品，隔离的内在影响，由于组成变化或生长动力学的应变。这项研究可以揭示俄歇和其他损耗过程在III-V材料系统中的作用，这是器件和材料界持续30多年的争论，并使高效二极管激光器和发光二极管在可见光区成为可能。

项目成果

Picosecond transient thermoreflectance for thermal conductivity characterization

• DOI: 10.1080/15567265.2019.1580807
• 发表时间: 2018-08
• 期刊: Nanoscale and Microscale Thermophysical Engineering
• 影响因子: 4.1
• 作者: Jihoon Jeong;Xianghai Meng;A. Rockwell;S. Bank;W. Hsieh;Jung‐Fu Lin;Yaguo Wang

High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach

使用全 MBE 方法在嵌入式介电微结构上实现高质量 GaAs 平面聚结

• DOI: 10.1021/acs.cgd.8b01671
• 发表时间: 2019
• 期刊: Crystal Growth & Design
• 影响因子: 3.8
• 作者: Ironside, Daniel J.;Skipper, Alec M.;Leonard, Thomas A.;Radulaski, Marina;Sarmiento, Tomas;Dhingra, Pankul;Lee, Minjoo L.;Vučković, Jelena;Bank, Seth R.
• 通讯作者: Bank, Seth R.

Electrical modulation of degenerate semiconductor plasmonic interfaces

• DOI: 10.1063/1.5108905
• 发表时间: 2019-07
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Zuoming Dong;Raj K. Vinnakota;A. Briggs;L. Nordin;S. Bank;D. Genov;D. Wasserman

In-plane Thermal Conductivity Measurement with Nanosecond Grating Imaging Technique

• DOI: 10.1080/15567265.2017.1416713
• 发表时间: 2018-04
• 期刊: Nanoscale and Microscale Thermophysical Engineering
• 影响因子: 4.1
• 作者: Jihoon Jeong;Ke Chen;Emily S. Walker;N. Roy;Feng He;Philip Liu;C. Grant Willson;M. Cullinan;Seth R. Bank;Yaguo Wang

Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique

• DOI: 10.1021/acsphotonics.7b00187
• 发表时间: 2017-06-01
• 期刊: ACS PHOTONICS
• 影响因子: 7
• 作者: Chen, Ke;Sheehan, Nathanial;Wang, Yaguo
• 通讯作者: Wang, Yaguo