CAREER: Development of AlInN Nanostructures for Advanced Ultraviolet Light-Emitters

非技术描述：该项目旨在开发一种新型的紫外光发射器。通过对AlN的详细理论和实验研究，本项目将为AlN纳米结构紫外光发射体的生长找到解决方案。提出的新一代纳米线发光器件在数据存储、高速通信、信息处理、光学互连、光学记录杀菌/水净化、医药和生物化学、空气净化设备和零排放汽车等固态照明光源方面具有很好的应用前景。该研究项目将为新泽西理工学院(NJIT)的学生提供独特的跨学科研究机会，以获得外延生长技术、实际操作器件制造和半导体器件表征方面的经验。位于新泽西州纽瓦克的NJIT有一个多元化的学生群体，其中有很大比例的非裔美国人、西班牙裔和女性学生。这一研究项目将为我们的本科生和研究生提供强大的机会。此外，与这项研究计划相关的实验将被修改，并通过NJIT大学前计划中心将其引入为K-12学生和教师计划的外展计划。这项研究计划鼓励来自代表性不足群体的学生，特别是女性、少数族裔候选人、退伍军人和残疾个人，参与开发III-氮化物纳米线半导体的新器件应用。此外，研究活动将贯穿整个职业计划，并将介绍给美国和全球的学生，使更广泛的社区受益。技术描述：在用于近紫外和紫外光子器件的InGaN和AlGaN半导体领域已经取得了重大进展。然而，将不同的III-氮化物合金用于紫外线发光二极管(LED)的方法相对来说还没有被探索过。这一职业计划将专注于基本原理和对工作在210-355 nm波长范围内的AlxIn1-xN基纳米结构紫外光LED的外延生长和特性的定量了解。这些纳米线紫外发光二极管将通过分子束外延生长。具体研究将包括：(1)新型纳米线LED结构和几何结构的设计和模拟；(2)分子束外延生长AlIn纳米线紫外线LED结构的基础研究；(3)实现独特结构的AlIn纳米线紫外线LED的开发。将进行详细的结构、光学、电气和可靠性表征。这项研究计划将利用AlIn纳米结构首次演示纳米线LED在紫外区工作。拟议项目的成功将为开发高效率和高功率的光子和电子器件奠定基础，充分利用III-氮化物纳米结构的潜力。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Nontechnical description: This project aims to develop a new form of ultraviolet light-emitters. Through a detailed theoretical and experimental study of AlInN, this project will identify solutions for the growth of AlInN nanostructured ultraviolet light-emitters. The proposed new generation nanowire light-emitters are promising candidates in solid-state lighting sources, as part of data storage, high-speed communications, information processing, optical interconnects, optical recording sterilization/water purification, medicine and biochemistry, air purification equipment and zero emission automobiles. This research program will offer unique interdisciplinary research opportunities to students at New Jersey Institute of Technology (NJIT) to gain experience in epitaxial growth techniques, hands-on device fabrication and characterization of semiconductor devices. Located in Newark, New Jersey, NJIT has a diverse student populating with a large percentage of African-American, Hispanic and women students. This research program will provide strong opportunity to our undergraduate and graduate students. In addition, experiments related to this research program will be modified and introduced to the outreach program planned for K-12 students and teachers through the Center for Pre-college Program at NJIT. This research program encourages students from underrepresented groups, in particular women, minority candidates, veterans and individuals with disabilities to participate in developing new device applications of the III-nitride nanowire semiconductors. Furthermore, research activities will be developed throughout this CAREER program and will be introduced to students in the U.S. and globally to benefit the broader community. Technical description: Significant progress has been made in the area of InGaN and AlGaN semiconductors for near ultraviolet and ultraviolet photonic devices, respectively. Nevertheless, the approach of using different III-nitride alloys for ultraviolet light-emitting diodes (LEDs) is relatively unexplored. This CAREER program will focus on fundamentals and quantitative understanding of the epitaxial growth and properties of AlxIn1-xN-based nanostructured ultraviolet LEDs operating in the wavelength range of 210 - 355nm. These nanowire ultraviolet LEDs will be grown by molecular beam epitaxy. The specific research will include: (1) design and simulation of novel nanowire LED structures and geometries; (2) fundamental investigation of the molecular beam epitaxial growth of AlInN nanowire ultraviolet LED structures; and (3) development of AlInN nanowire ultraviolet LEDs implementing unique structures. Detailed structure, optical, electrical, and reliability characterizations will be performed. This research program will enable a first demonstration of nanowire LEDs operating in the ultraviolet regime using AlInN nanostructures. The success of the proposed project will establish a foundation to develop high efficiency and high-power photonic and electronic devices that utilize the full potential of III-nitride nanostructures.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.