CAREER: Development of AlInN Nanostructures for Advanced Ultraviolet Light-Emitters

非技术说明：该项目旨在开发一种新型紫外线发射器。通过对氮化铝的详细理论和实验研究，本项目将为氮化铝纳米结构紫外光发射器的生长找到解决方案。新一代纳米线发光体在固态照明、数据存储、高速通信、信息处理、光互连、光记录消毒/水净化、医药和生物化学、空气净化设备和零排放汽车等领域具有广阔的应用前景。该研究计划将为新泽西理工学院（NJIT）的学生提供独特的跨学科研究机会，以获得外延生长技术，动手器件制造和半导体器件表征方面的经验。NJIT位于新泽西的纽瓦克，拥有多元化的学生，其中非洲裔美国人，西班牙裔和女性学生占很大比例。这项研究计划将提供强大的机会，我们的本科生和研究生。此外，与本研究计划相关的实验将被修改，并通过NJIT的大学预科课程中心引入到为K-12学生和教师计划的外展计划中。该研究计划鼓励来自代表性不足群体的学生，特别是妇女，少数民族候选人，退伍军人和残疾人参与开发III族氮化物纳米线半导体的新器件应用。此外，研究活动将在整个职业生涯计划中发展，并将介绍给美国和全球的学生，以造福更广泛的社区。技术说明：InGaN和AlGaN半导体分别用于近紫外和紫外光子器件的领域已经取得了重大进展。然而，使用不同的III族氮化物合金的紫外发光二极管（LED）的方法是相对未开发的。该职业计划将侧重于基本原理和定量理解的外延生长和性能的AlxIn 1-xN基纳米结构紫外LED在210 - 355 nm的波长范围内工作。这些纳米线紫外发光二极管将通过分子束外延生长。具体研究将包括：（1）新型纳米线LED结构和几何形状的设计和模拟;（2）AlInN纳米线紫外LED结构的分子束外延生长的基础研究;以及（3）实现独特结构的AlInN纳米线紫外LED的开发。将进行详细的结构、光学、电气和可靠性表征。这项研究计划将使第一个示范纳米线发光二极管在紫外线制度使用AlInN纳米结构。该项目的成功将为开发充分利用III族氮化物纳米结构潜力的高效率和高功率光子和电子器件奠定基础。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Nontechnical description: This project aims to develop a new form of ultraviolet light-emitters. Through a detailed theoretical and experimental study of AlInN, this project will identify solutions for the growth of AlInN nanostructured ultraviolet light-emitters. The proposed new generation nanowire light-emitters are promising candidates in solid-state lighting sources, as part of data storage, high-speed communications, information processing, optical interconnects, optical recording sterilization/water purification, medicine and biochemistry, air purification equipment and zero emission automobiles. This research program will offer unique interdisciplinary research opportunities to students at New Jersey Institute of Technology (NJIT) to gain experience in epitaxial growth techniques, hands-on device fabrication and characterization of semiconductor devices. Located in Newark, New Jersey, NJIT has a diverse student populating with a large percentage of African-American, Hispanic and women students. This research program will provide strong opportunity to our undergraduate and graduate students. In addition, experiments related to this research program will be modified and introduced to the outreach program planned for K-12 students and teachers through the Center for Pre-college Program at NJIT. This research program encourages students from underrepresented groups, in particular women, minority candidates, veterans and individuals with disabilities to participate in developing new device applications of the III-nitride nanowire semiconductors. Furthermore, research activities will be developed throughout this CAREER program and will be introduced to students in the U.S. and globally to benefit the broader community. Technical description: Significant progress has been made in the area of InGaN and AlGaN semiconductors for near ultraviolet and ultraviolet photonic devices, respectively. Nevertheless, the approach of using different III-nitride alloys for ultraviolet light-emitting diodes (LEDs) is relatively unexplored. This CAREER program will focus on fundamentals and quantitative understanding of the epitaxial growth and properties of AlxIn1-xN-based nanostructured ultraviolet LEDs operating in the wavelength range of 210 - 355nm. These nanowire ultraviolet LEDs will be grown by molecular beam epitaxy. The specific research will include: (1) design and simulation of novel nanowire LED structures and geometries; (2) fundamental investigation of the molecular beam epitaxial growth of AlInN nanowire ultraviolet LED structures; and (3) development of AlInN nanowire ultraviolet LEDs implementing unique structures. Detailed structure, optical, electrical, and reliability characterizations will be performed. This research program will enable a first demonstration of nanowire LEDs operating in the ultraviolet regime using AlInN nanostructures. The success of the proposed project will establish a foundation to develop high efficiency and high-power photonic and electronic devices that utilize the full potential of III-nitride nanostructures.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.