CAREER: Development of AlInN Nanostructures for Advanced Ultraviolet Light-Emitters

职业：开发用于先进紫外光发射器的 AlInN 纳米结构

• 批准号: 1944312
• 负责人: Hieu Nguyen
• 金额: $ 50万
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-07-01 至 2025-06-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1944312&HistoricalAwards=false
• 关键词: CAREER; Development; AlInN; Nanostructures; Advanced

Nontechnical description: This project aims to develop a new form of ultraviolet light-emitters. Through a detailed theoretical and experimental study of AlInN, this project will identify solutions for the growth of AlInN nanostructured ultraviolet light-emitters. The proposed new generation nanowire light-emitters are promising candidates in solid-state lighting sources, as part of data storage, high-speed communications, information processing, optical interconnects, optical recording sterilization/water purification, medicine and biochemistry, air purification equipment and zero emission automobiles. This research program will offer unique interdisciplinary research opportunities to students at New Jersey Institute of Technology (NJIT) to gain experience in epitaxial growth techniques, hands-on device fabrication and characterization of semiconductor devices. Located in Newark, New Jersey, NJIT has a diverse student populating with a large percentage of African-American, Hispanic and women students. This research program will provide strong opportunity to our undergraduate and graduate students. In addition, experiments related to this research program will be modified and introduced to the outreach program planned for K-12 students and teachers through the Center for Pre-college Program at NJIT. This research program encourages students from underrepresented groups, in particular women, minority candidates, veterans and individuals with disabilities to participate in developing new device applications of the III-nitride nanowire semiconductors. Furthermore, research activities will be developed throughout this CAREER program and will be introduced to students in the U.S. and globally to benefit the broader community. Technical description: Significant progress has been made in the area of InGaN and AlGaN semiconductors for near ultraviolet and ultraviolet photonic devices, respectively. Nevertheless, the approach of using different III-nitride alloys for ultraviolet light-emitting diodes (LEDs) is relatively unexplored. This CAREER program will focus on fundamentals and quantitative understanding of the epitaxial growth and properties of AlxIn1-xN-based nanostructured ultraviolet LEDs operating in the wavelength range of 210 - 355nm. These nanowire ultraviolet LEDs will be grown by molecular beam epitaxy. The specific research will include: (1) design and simulation of novel nanowire LED structures and geometries; (2) fundamental investigation of the molecular beam epitaxial growth of AlInN nanowire ultraviolet LED structures; and (3) development of AlInN nanowire ultraviolet LEDs implementing unique structures. Detailed structure, optical, electrical, and reliability characterizations will be performed. This research program will enable a first demonstration of nanowire LEDs operating in the ultraviolet regime using AlInN nanostructures. The success of the proposed project will establish a foundation to develop high efficiency and high-power photonic and electronic devices that utilize the full potential of III-nitride nanostructures.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：本项目旨在开发一种新型紫外线发射器。通过对AlInN的详细理论和实验研究，本项目将确定AlInN纳米结构紫外光发射器生长的解决方案。所提出的新一代纳米线光源在固态光源、数据存储、高速通信、信息处理、光互连、光记录灭菌/水净化、医药和生物化学、空气净化设备和零排放汽车等领域具有广阔的应用前景。该研究项目将为新泽西理工学院（NJIT）的学生提供独特的跨学科研究机会，以获得外延生长技术，动手器件制造和半导体器件表征方面的经验。新泽西理工大学位于新泽西州的纽瓦克，拥有多元化的学生，其中非洲裔美国人、西班牙裔和女性学生占很大比例。这个研究项目将为我们的本科生和研究生提供强大的机会。此外，与本研究项目相关的实验将被修改并通过NJIT大学预科项目中心引入到为K-12学生和教师计划的外展项目中。该研究项目鼓励来自弱势群体的学生，特别是女性、少数族裔候选人、退伍军人和残疾人士参与开发iii -氮化纳米线半导体的新设备应用。此外，研究活动将在整个职业计划中发展，并将介绍给美国和全球的学生，以使更广泛的社区受益。技术描述：分别用于近紫外和紫外光子器件的InGaN和AlGaN半导体领域取得了重大进展。然而，在紫外发光二极管（led）中使用不同的iii -氮化物合金的方法相对来说尚未被探索。该职业计划将重点关注波长范围为210 - 355nm的alxin1 - xn基纳米结构紫外led的外延生长和特性的基本原理和定量理解。这些纳米线紫外发光二极管将通过分子束外延生长。具体研究将包括：(1)设计和模拟新型纳米线LED结构和几何形状；(2) AlInN纳米线紫外LED结构分子束外延生长的基础研究；(3)开发具有独特结构的AlInN纳米线紫外led。详细的结构、光学、电气和可靠性特性将被执行。该研究项目将首次展示使用AlInN纳米结构在紫外线下工作的纳米线led。该项目的成功将为开发高效、高功率的光子和电子器件奠定基础，这些器件充分利用了iii -氮化物纳米结构的潜力。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy

• DOI: 10.1364/cleo_si.2020.stu3p.4
• 发表时间: 2020-05
• 期刊: 2020 Conference on Lasers and Electro-Optics (CLEO)
• 作者: R. Velpula;B. Jain;H. Bui;H. Nguyen

Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

• DOI: 10.1364/ao.394149
• 发表时间: 2020-06-10
• 期刊: APPLIED OPTICS
• 影响因子: 1.9
• 作者: Velpula, Ravi Teja;Jain, Barsha;Nguyen, Hieu Pham Trung
• 通讯作者: Nguyen, Hieu Pham Trung

(Invited) Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes Using Photonic Crystal Structures

（特邀）利用光子晶体结构提高AlInN纳米线紫外发光二极管的效率

• DOI: 10.1149/10907.0003ecst
• 发表时间: 2022
• 期刊: ECS Transactions
• 作者: Nguyen, Hieu Pham;Velpula, Ravi Teja;Patel, Moulik;Jain, Barsha;Marangon, Andressa
• 通讯作者: Marangon, Andressa

Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes

• DOI: 10.1117/12.2650411
• 发表时间: 2023-03
• 作者: B. Jain;Mano Balo Sankar Muthu;R. Velpula;N. T. Nguyen;H. Nguyen

Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum

• DOI: 10.1038/s41598-020-59442-0
• 发表时间: 2020-02-13
• 期刊: SCIENTIFIC REPORTS
• 影响因子: 4.6
• 作者: Velpula, Ravi Teja;Jain, Barsha;Hieu Pham Trung Nguyen
• 通讯作者: Hieu Pham Trung Nguyen