I-Corps: Smart Light-Emitting Diodes for Micro-Displays
I-Corps: Smart Light-Emitting Diodes for Micro-Displays
批准号:
2013780
负责人:
Hieu Nguyen
金额:
$5.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2020
资助国家:
美国
项目状态:
已结题
起止时间:
2020-06-15 至 2021-11-30
中文摘要
点击翻译按钮获取中文摘要
英文摘要
The broader impact/commercial potential of this I-Corps project focuses on new displays and AR/VR device applications based on nanowire microLEDs (μLEDs). Financial and environmental benefits include lower electricity costs and reduced emissions from decreased consumption. LEDs in micron- or sub-micron size with high efficiency and low power consuming are desirable for applications such as micro-displays for cell phones and wearable electronics. The high efficiency, high color-rendering properties, and low power consumption μLEDs are perfectly suitable as an alternative replacement of current display technologies.This I-Corps project explores translation of μLEDs for display and AR/VR device applications. Among different approaches of generating RGB and white color μLEDs for LED displays, the monolithic display based on III-nitride nanowire heterostructure μLEDs is promising since it allows more direct control of emission wavelengths of the LEDs. Our solution, full-color and white-color nanowire μLEDs, offer several improvements over current LED technologies. The color emissions of our μLEDs can be readily varied from blue to red with highly stable light emission. Compared to conventional planar structures, our nanowire μLEDs exhibit several distinct advantages, including reduced strain-induced polarization fields and dislocation densities. The nanowire μLEDs can be more efficient in heat dissipation due to reduced current spreading resistance, and resulting in increased injection current levels. Improved efficiency and thermal management allow the integration of μLEDs onto flexible substrates, typically less thermally and electrically conductive. These nanowire μLEDs are expected to perform better than their thin-film counterparts for micro-display applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(3)
专著(0)
科研奖励(0)
会议论文
Controlled Electron Leakage in Electron Blocking Layer Free InGaN/GaN Nanowire Light-Emitting Diodes
无电子阻挡层 InGaN/GaN 纳米线发光二极管中的受控电子泄漏
DOI:
10.2298/fuee2103393v
发表时间:
2021
期刊:
Facta Universitatis
影响因子:
--
作者:
[R. T. Velpula, B. Jain]
通讯作者:
R. T. Velpula, B. Jain
Electron Blocking Layer Free Full-Color InGaN/GaN White Light-Emitting Diodes
无电子阻挡层全色 InGaN/GaN 白色发光二极管
DOI:
10.1149/ma2020-02422743mtgabs
发表时间:
2020
期刊:
ECS Meeting Abstracts
影响因子:
--
作者:
[Jain, Barsha, Velpula, Ravi Teja, Bui, Ha Quoc, Patel, Moulik, Nguyen, Hieu Pham]
通讯作者:
Nguyen, Hieu Pham
Full-Color MicroLEDs for Display Technologies
用于显示技术的全彩 MicroLED
DOI:
10.1364/cleo_at.2020.ath3i.4
发表时间:
2020
期刊:
Conference on Lasers and Electro-Optics
影响因子:
--
作者:
[Bui, Ha Quoc, Velpula, Ravi Teja, Jain, Barsha, Nguyen, Hieu Pham]
通讯作者:
Nguyen, Hieu Pham
I-Corps: Low Power Memory Chips
-
批准号:2344683
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:2023
-
负责人:Hieu Nguyen
-
依托单位:
I-Corps: Airborne and Surface Disinfection Using Narrow Band Ultraviolet Light-Emitting Diodes
-
批准号:2202054
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:2022
-
负责人:Hieu Nguyen
-
依托单位:
CAREER: Development of AlInN Nanostructures for Advanced Ultraviolet Light-Emitters
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批准号:1944312
-
项目类别:Continuing Grant
-
资助金额:$50.0万
-
财政年份:2020
-
负责人:Hieu Nguyen
-
依托单位:
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