I-Corps: Low Power Memory Chips

I-Corps：低功耗存储芯片

• 批准号: 2344683
• 负责人: Hieu Nguyen
• 金额: $ 5万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-11-15 至 2024-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2344683&HistoricalAwards=false
• 关键词: Corps; Low; Power; Memory; Chips

The broader impact/commercial potential of this I-Corps project is the development of advanced memory devices. The memory sector is expected to take ~27% (~175 billion USD) of the total semiconductor market (~650 billion USD) by 2025 and plays a crucial role in computer systems, electronic gadgets, data centers, and cloud service systems. Currently, NAND flash technology, the dominant storage technology, has several disadvantages such as device scaling, limited endurance, low operational writing speed and requires a high write voltage and high-power consumption. The proposed technology is a resistive random-access memory (RRAM)-based non-volatile memory (NVM) technology that offers competitive solutions to the challenges of current memory technology due to its simple structure, the possibility of excellent scalability, which allows for the storage of more data, nanosecond operation speed, which allows for faster access and processing of data, and nanowatts power consumption, which increases the battery life of devices and reduces costs. The proposed RRAM may be used in a variety of Internet of Things (IoT) devices to enable faster data processing and longer battery life. In addition, the automotive industry may adopt this technology for advanced driver assistance systems and autonomous driving systems to provide high performance storage. This I-Corps project is based on the development of ultralow power (10 – 200 nW) resistive random-access memory (RRAM) devices. The proposed RRAM devices including the electrodes, carrier transport, interface properties between the contacts, and resistive switching layers of the have been systematically studied. The devices exhibit ultra-low power operation under a 10 nA operating current with excellent resistive switching characteristics, such as highly uniform I-V characteristics with concentrated SET and RESET voltages, and excellent stability. In addition, these proposed RRAM devices have multi-bit storage capability with a high Roff/Ron ratio (103). The multi-bit resistive switching behaviors of the RRAM devices at a low compliance current pave the way for low-power and high-density data storage applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该 I-Corps 项目更广泛的影响/商业潜力是先进存储设备的开发。 到 2025 年，存储器行业预计将占整个半导体市场（约 6500 亿美元）的 27%（约 1750 亿美元），并在计算机系统、电子产品、数据中心和云服务系统中发挥着至关重要的作用。 目前，占主导地位的存储技术NAND闪存技术存在设备尺寸缩小、耐用性有限、操作写入速度低、写入电压高、功耗高等缺点。 所提出的技术是基于电阻式随机存取存储器（RRAM）的非易失性存储器（NVM）技术，由于其简单的结构、出色的可扩展性（允许存储更多数据）、纳秒级操作速度（允许更快地访问和处理数据）以及纳瓦级功耗（延长设备的电池寿命并降低成本），为当前存储技术的挑战提供了有竞争力的解决方案。 所提出的 RRAM 可用于各种物联网 (IoT) 设备，以实现更快的数据处理和更长的电池寿命。此外，汽车行业可能会采用该技术为高级驾驶辅助系统和自动驾驶系统提供高性能存储。该 I-Corps 项目基于超低功耗 (10 – 200 nW) 电阻式随机存取存储器 (RRAM) 设备的开发。所提出的 RRAM 器件，包括电极、载流子传输、触点之间的界面特性以及电阻切换层，都得到了系统的研究。 该器件在 10 nA 工作电流下实现超低功耗运行，具有出色的电阻开关特性，例如具有集中 SET 和 RESET 电压的高度均匀 I-V 特性以及出色的稳定性。 此外，这些提出的 RRAM 器件具有多位存储能力和高 Roff/Ron 比 (103)。 RRAM 器件在低合规电流下的多位电阻开关行为为低功耗和高密度数据存储应用铺平了道路。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力优点和更广泛的影响审查标准进行评估，被认为值得支持。