Flexible Optoelectronic Systems for Chronic Bi-Directional Neural Interfacing
用于慢性双向神经接口的柔性光电系统
基本信息
- 批准号:2001231
- 负责人:
- 金额:$ 45万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2020
- 资助国家:美国
- 起止时间:2020-05-15 至 2023-04-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Understanding how the brain produces behavior and mental processes such as cognitive functions is one of the major goals in neuroscience. The brain consists of millions of neurons that are interconnected and form distinct circuits that transmit signals in coordinated manners. To analyze how neural circuit activity lead to behavior, neuroscientists rely on technologies to manipulate and track signal transmission of neurons in live animals. This project aims to develop strategies to form a novel interfacing device technology capable of chronically stable, optical, multi-regional, and bi-directional neural communication in behaving animals. Successful development of the flexible neural interfacing device would enable newfound understanding of the mechanism of human brain functions, as well as improved treatment protocols for neuropsychological diseases such as the Parkinson’s disease. Another aim of this project is to create a new course on bioelectronics that include intensive lab modules on layer-transfer processes for thin-film electronic devices, aimed at providing K-12 to graduate students opportunities to apply textbook theories to research laboratory settings or industry. The state-of-the-art neurotechnologies rely on optical fibers or miniaturized microscopes to deliver light to and from the animal’s brain, which is engineered to produce proteins that make neurons interact with light at specific wavelengths. The two approaches, however, suffer problems such as poor resolution and inability to interact with neurons in deep brain regions, respectively, which limit their potential for brain-wide interfacing. This project aims to address these issues by developing a novel semiconductor-based optical brain-machine interface via the heterointegration of thin-film III-V optoelectronic devices in flexible geometries. Integration of freestanding, single-crystalline layers of micro-LEDs and photodetectors can yield a novel device platform capable of simultaneous optogenetic neuromodulation and functional recording in behaving mouse brains. The development of such technology requires wide range of skillset including the design, epitaxial growth, layer-transfer, and micro-fabrication of the neural probe, as well as in vivo demonstration including surgical implantation, input/output interconnection, optical stimulation and recording, and data analysis.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
了解大脑如何产生行为和心理过程,如认知功能,是神经科学的主要目标之一。大脑由数以百万计的神经元组成,这些神经元相互连接,形成不同的电路,以协调的方式传输信号。为了分析神经回路活动如何导致行为,神经科学家依靠技术来操纵和跟踪活体动物神经元的信号传输。该项目旨在制定策略,以形成一种新型的接口设备技术,能够在行为动物中进行长期稳定,光学,多区域和双向神经通信。柔性神经接口设备的成功开发将使人们对人类大脑功能机制有新的了解,并改进帕金森病等神经心理疾病的治疗方案。该项目的另一个目的是创建一个新的生物电子学课程,其中包括薄膜电子设备层转移过程的强化实验室模块,旨在为K-12研究生提供将教科书理论应用于研究实验室环境或行业的机会。最先进的神经技术依靠光纤或微型显微镜将光传递到动物的大脑,动物的大脑被设计成产生蛋白质,使神经元与特定波长的光相互作用。然而,这两种方法分别存在分辨率差和无法与脑深部区域的神经元相互作用等问题,这限制了它们在全脑接口方面的潜力。该项目旨在通过开发一种新型的基于半导体的光学脑机接口来解决这些问题,该接口通过在灵活的几何形状中异质集成薄膜III-V光电器件来实现。微发光二极管和光电探测器的独立单晶层的集成可以产生一种新的设备平台,能够在行为小鼠大脑中同时进行光遗传神经调节和功能记录。这种技术的发展需要广泛的技能,包括神经探针的设计、外延生长、层转移和微制造,以及体内演示,包括手术植入、输入/输出互连、光学刺激和记录,该奖项反映了NSF的法定使命,并被认为是值得通过使用基金会的智力价值和更广泛的影响审查标准。
项目成果
期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Vertical full-colour micro-LEDs via 2D materials-based layer transfer
- DOI:10.1038/s41586-022-05612-1
- 发表时间:2023-02-02
- 期刊:
- 影响因子:64.8
- 作者:Shin, Jiho;Kim, Hyunseok;Kim, Jeehwan
- 通讯作者:Kim, Jeehwan
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Jeehwan Kim其他文献
Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates
- DOI:
10.1016/j.tsf.2008.03.044 - 发表时间:
2008-09-01 - 期刊:
- 影响因子:
- 作者:
Jeehwan Kim;Jae Young Lee;Ya-Hong Xie - 通讯作者:
Ya-Hong Xie
Path towards graphene commercialization from lab to market
从实验室到市场的石墨烯商业化之路
- DOI:
10.1038/s41565-019-0555-2 - 发表时间:
2019-10-03 - 期刊:
- 影响因子:34.900
- 作者:
Wei Kong;Hyun Kum;Sang-Hoon Bae;Jaewoo Shim;Hyunseok Kim;Lingping Kong;Yuan Meng;Kejia Wang;Chansoo Kim;Jeehwan Kim - 通讯作者:
Jeehwan Kim
Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode
深度可控超浅铟镓锌氧化物/砷化镓异质结二极管
- DOI:
10.1016/j.jallcom.2013.02.012 - 发表时间:
2013 - 期刊:
- 影响因子:6.2
- 作者:
Seong;S. Choi;Jongtaek Lee;Jeehwan Kim;W. Jung;Hyun‐Yong Yu;Y. Roh;Jin - 通讯作者:
Jin
Integration of bulk materials with two-dimensional materials for physical coupling and applications
用于物理耦合和应用的块状材料与二维材料的集成
- DOI:
10.1038/s41563-019-0335-2 - 发表时间:
2019-05-21 - 期刊:
- 影响因子:38.500
- 作者:
Sang-Hoon Bae;Hyun Kum;Wei Kong;Yunjo Kim;Chanyeol Choi;Byunghun Lee;Peng Lin;Yongmo Park;Jeehwan Kim - 通讯作者:
Jeehwan Kim
The future of two-dimensional semiconductors beyond Moore’s law
超越摩尔定律的二维半导体的未来
- DOI:
10.1038/s41565-024-01695-1 - 发表时间:
2024-07-01 - 期刊:
- 影响因子:34.900
- 作者:
Ki Seok Kim;Junyoung Kwon;Huije Ryu;Changhyun Kim;Hyunseok Kim;Eun-Kyu Lee;Doyoon Lee;Seunghwan Seo;Ne Myo Han;Jun Min Suh;Jekyung Kim;Min-Kyu Song;Sangho Lee;Minsu Seol;Jeehwan Kim - 通讯作者:
Jeehwan Kim
Jeehwan Kim的其他文献
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{{ truncateString('Jeehwan Kim', 18)}}的其他基金
Collaborative Research: FuSe: Monolithic 3D Integration (M3D) of 2D Materials-Based CFET Logic Elements towards Advanced Microelectronics
合作研究:FuSe:面向先进微电子学的基于 2D 材料的 CFET 逻辑元件的单片 3D 集成 (M3D)
- 批准号:
2329190 - 财政年份:2023
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Collaborative Research: Remote epitaxy on van der Waals materials: unveiling adatom interaction, growing single-crystal membranes, and producing unconventional heterostructures
合作研究:范德华材料的远程外延:揭示吸附原子相互作用、生长单晶膜以及产生非常规异质结构
- 批准号:
2240994 - 财政年份:2023
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Collaborative Research: Wafer-Scale Nanomanufacturing of 2D Atomic Layer Material Heterostructures Through Exfoliation and Transfer
合作研究:通过剥离和转移进行二维原子层材料异质结构的晶圆级纳米制造
- 批准号:
1825731 - 财政年份:2018
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
E2CDA: Type I: Collaborative Research: Energy-Efficient Artificial Intelligence with Binary RRAM and Analog Epitaxial Synaptic Arrays
E2CDA:I 型:协作研究:采用二进制 RRAM 和模拟外延突触阵列的节能人工智能
- 批准号:
1740184 - 财政年份:2017
- 资助金额:
$ 45万 - 项目类别:
Continuing Grant
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