Spin coherence of silicon vacancy qubits in SiC

SiC 中硅空位量子位的自旋相干性

• 批准号: 241647006
• 负责人: Privatdozent Dr. Georgy Astakhov
• 金额: --
• 依托单位: Institut für Ionenstrahlphysik und Materialforschung
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2016-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/241647006?language=en
• 关键词: Spin; coherence; silicon; vacancy; qubits

We will measure spin lattice relaxation time and spin coherence time of single silicon vacancies and related defects in silicon carbide (SiC) at different temperatures depending on crystal polytype and isotopic composition. To this end we will exploit an optical spin pumping scheme for spin initialization/readout and pulsed magntetic resonance techniques for spin manipulation. In our experiments we will use a microscopy arrangement, which will be applied to perform quantum operations on a single silicon vacancy spin at ambient conditions. Silicon vacancies in SiC potentially combine most of the advantages of different solid state systems, which are considered as realistic candidates for spin-based quantum computing. This includes optical initialization without need of external magnetic fields, expected very long spin coherence in isotopically purified crystals, room temperature spin coherence and developed microfabrication techniques. If successful, our project will prove the expected high potential of silicon carbide as material for nanoscale quantum technologies and stimulate further researches in this field.

我们将测量自旋晶格弛豫时间和自旋相干时间的单个硅空位和相关的缺陷在碳化硅（SiC）在不同的温度下，根据晶体多型体和同位素组成。为此，我们将利用光学自旋泵浦自旋初始化/读出和脉冲磁共振自旋操纵技术的计划。在我们的实验中，我们将使用显微镜的安排，这将被应用于执行量子操作的一个单一的硅空位自旋在环境条件下。SiC中的硅空位潜在地联合收割机结合了不同固态系统的大多数优点，这被认为是基于自旋的量子计算的现实候选者。这包括不需要外部磁场的光学初始化，同位素纯化晶体中预期的非常长的自旋相干性，室温自旋相干性和先进的微加工技术。如果成功，我们的项目将证明碳化硅作为纳米量子技术材料的预期高潜力，并刺激该领域的进一步研究。

项目成果

High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide

• DOI: 10.1103/physrevapplied.4.014009
• 发表时间: 2015-07-20
• 期刊: PHYSICAL REVIEW APPLIED
• 影响因子: 4.6
• 作者: Simin, D.;Fuchs, F.;Dyakonov, V.
• 通讯作者: Dyakonov, V.

All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

• DOI: 10.1103/physrevx.6.031014
• 发表时间: 2016-07-28
• 期刊: PHYSICAL REVIEW X
• 影响因子: 12.5
• 作者: Simin, D.;Soltamov, V. A.;Astakhov, G. V.
• 通讯作者: Astakhov, G. V.

Locking of electron spin coherence above 20 ms in natural silicon carbide

• DOI: 10.1103/physrevb.95.161201
• 发表时间: 2016-02
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: D. Simin;H. Kraus;A. Sperlich;T. Ohshima;G. Astakhov;V. Dyakonov

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

• DOI: 10.1063/1.4904807
• 发表时间: 2014-12-15
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Muzha, A.;Fuchs, F.;Astakhov, G. V.
• 通讯作者: Astakhov, G. V.

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

• DOI: 10.1038/ncomms8578
• 发表时间: 2015-07-01
• 期刊: NATURE COMMUNICATIONS
• 影响因子: 16.6
• 作者: Fuchs, F.;Stender, B.;Astakhov, G. V.
• 通讯作者: Astakhov, G. V.