Spin coherence of silicon vacancy qubits in SiC

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We will measure spin lattice relaxation time and spin coherence time of single silicon vacancies and related defects in silicon carbide (SiC) at different temperatures depending on crystal polytype and isotopic composition. To this end we will exploit an optical spin pumping scheme for spin initialization/readout and pulsed magntetic resonance techniques for spin manipulation. In our experiments we will use a microscopy arrangement, which will be applied to perform quantum operations on a single silicon vacancy spin at ambient conditions. Silicon vacancies in SiC potentially combine most of the advantages of different solid state systems, which are considered as realistic candidates for spin-based quantum computing. This includes optical initialization without need of external magnetic fields, expected very long spin coherence in isotopically purified crystals, room temperature spin coherence and developed microfabrication techniques. If successful, our project will prove the expected high potential of silicon carbide as material for nanoscale quantum technologies and stimulate further researches in this field.