Quantum control of spin centers in silicon carbide with microcavities

微腔碳化硅自旋中心的量子控制

• 批准号: 323228505
• 负责人: Privatdozent Dr. Georgy Astakhov
• 金额: --
• 依托单位: Institut für Ionenstrahlphysik und Materialforschung
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2016
• 资助国家: 德国
• 起止时间: 2015-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/323228505?language=en
• 关键词: Quantum; control; spin; centers; silicon

Microcavities are ideal interfaces between photons as flying qubits and electron spins as stationary qubits, as they strongly enhance the interaction between light and matter. They are therefore among the foremost tools in the study and manipulation of the quantum mechanical nature of light, matter and their interactions. Silicon carbide (SiC) is a very promising material platform for wafer-scale spintronics and quantum information processing. First, this is because SiC is a material compatible with CMOS (complementary metal-oxide-semiconductor) technology, allowing construction of integrated circuits on a SiC wafer, just as silicon. Second and most importantly, spin centers in this material, particularly silicon vacancies, demonstrate an exceptionally long spin coherence time already in commercial wafers and they can be optically controlled even at the single-spin level. However, the main obstacles against applications of these centers are a low count rate from single centers and a low spin readout contrast.In this project, we will couple a single spin color center to a high quality resonator formed by a SiC chip and a silicon micromirror. This type of micromirror offers excellent surface quality, small radii of curvature and a direct path to scalability. Using resonant excitation and detection schemes, we plan to increase the spin readout contrast to above 50%. Finally, we plan to demonstrate spin-photon entanglement with a silicon vacancy in SiC, which is an important step towards implementation of quantum repeaters and networks.

微腔是作为飞行量子比特的光子和作为静止量子比特的电子自旋之间的理想界面，因为它们强烈增强了光和物质之间的相互作用。因此，它们是研究和操纵光、物质及其相互作用的量子力学性质的最重要工具之一。碳化硅（SiC）是一种非常有前途的圆片级自旋电子学和量子信息处理的材料平台。首先，这是因为SiC是与CMOS（互补金属氧化物半导体）技术兼容的材料，允许在SiC晶片上构造集成电路，就像硅一样。其次，也是最重要的是，这种材料中的自旋中心，特别是硅空位，在商业晶片中已经表现出非常长的自旋相干时间，并且即使在单自旋水平上也可以进行光学控制。然而，这些中心的应用的主要障碍是从单个中心的低计数率和低的自旋读出对比度。在这个项目中，我们将耦合一个单一的自旋色心到由SiC芯片和硅衬底形成的高质量的谐振器。这种类型的曲面具有出色的表面质量、较小的曲率半径和直接的可扩展性。使用共振激发和检测方案，我们计划将自旋读出对比度提高到50%以上。最后，我们计划展示SiC中硅空位的自旋光子纠缠，这是实现量子中继器和网络的重要一步。

项目成果

Local vibrational modes of Si vacancy spin qubits in SiC

• DOI: 10.1103/physrevb.101.144109
• 发表时间: 2020-02
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Z. Shang;A. Hashemi;Y. Berencén;H. Komsa;P. Erhart;S. Zhou;M. Helm;A. Krasheninnikov;G. Astakhov

Optically detected spin-mechanical resonance in silicon carbide membranes

• DOI: 10.1103/physrevb.100.094104
• 发表时间: 2019-09-09
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Poshakinskiy, A., V;Astakhov, G., V
• 通讯作者: Astakhov, G., V