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Fundamental challenges and potential solutions for THz SiGeC heterojunction bipolar transistors

太赫兹 SiGeC 异质结双极晶体管的基本挑战和潜在解决方案

基本信息

批准号：
242702231
负责人：
Dr. Bernd Heinemann
金额：
--
依托单位：
Professur für Elektronische Bauelemente und Integrierte Schaltungen
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2014
资助国家：
德国
起止时间：
2013-12-31 至 2018-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/242702231?language=en
关键词：
Fundamental challenges potential solutions THz

项目摘要

With the latest achievements in heterojunction bipolar transistor (HBT) high-frequency performance, there has been increased interest in utilizing the frequency spectrum within the THz gap (300GHz to 30THz) for a large variety of applications. It has also been predicted most recently that silicon-germanium-carbon (SiGeC) HBTs should be capable of peak power gain (i.e. maximum oscillation) frequencies fmax up to 2THz. These findings in conjunction with lower fabrication cost and higher on-chip integration levels, especially directly with CMOS, appear to favor SiGeC HBTs at least for commercial purposes. However, the predictions did not specify the process solutions that are required to advance from the present state-of-the-art performance (fmax = 500GHz) to the physical limit. The objective of this project is, therefore, the investigation of fundamental roadblocks for achieving the ultimate performance potential of SiGeC HBT technology. The proposed research on high-speed npn transistors addresses the following issues: (i) Investigation of vertical and lateral device architecture options for achieving a balanced THz performance while keeping in mind the practical implementation (such as minimizing the collector current density at peak high-frequency performance). (ii) Calibration of physical models for carrier transport simulation on measured data from very advanced vertical structures fabricated in this project. (iii) Identification of potential roadblocks for developing future SiGeC HBT process technologies. (iv) Evaluation of the suitability of the presently most advanced compact SiGeC HBT model formulations for the fabricated structures. Both transistors and selected benchmark circuits will be used to study the impact of process variants on electrical performance. The two project partners (Chair for Electron Device and Integrated Circuits at TU Dresden and Innovations for High Performance (IHP) at Frankfurt/Oder) will work closely together on device fabrication, electrical characterization, and device modeling.

随着异质结双极晶体管（HBT）高频性能的最新成就，人们越来越关注将太赫兹带隙（300 GHz至30 THz）内的频谱用于各种应用。最近还预测，硅锗碳（SiGeC）HBT应当能够具有高达2 THz的峰值功率增益（即，最大振荡）频率fmax。这些发现与较低的制造成本和较高的片上集成度相结合，特别是直接与CMOS相结合，似乎有利于SiGeC HBT至少用于商业目的。然而，这些预测并没有具体说明从目前最先进的性能（fmax = 500 GHz）提升到物理极限所需的工艺解决方案。因此，本项目的目标是调查实现SiGeC HBT技术最终性能潜力的基本障碍。对高速npn晶体管的拟议研究解决了以下问题：（i）研究垂直和横向器件架构选项，以实现平衡的THz性能，同时牢记实际实现（如最小化峰值高频性能时的集电极电流密度）。(ii)根据本项目制造的非常先进的垂直结构的测量数据校准载流子输运模拟的物理模型。(iii)识别开发未来SiGeC HBT工艺技术的潜在障碍。(iv)评估目前最先进的紧凑型SiGeC HBT模型配方的制造结构的适用性。晶体管和选定的基准电路将用于研究工艺变量对电气性能的影响。两个项目合作伙伴（德累斯顿工业大学电子器件和集成电路主席和法兰克福/奥德的高性能创新（IHP））将在器件制造、电气特性和器件建模方面密切合作。

项目成果

期刊论文数量（8）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Why is there no internal collector resistance in HICUM?

为什么HICUM没有内部集电极电阻？

DOI：
10.1109/bctm.2016.7738944
发表时间：
2016
期刊：
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
影响因子：
0
作者：
M. Schroter;S. Lehmann;A. Pawlak
通讯作者：
A. Pawlak

SiGe heterojunction bipolar transistor technology for sub-mm-wave electronics — state-of-the-art and future prospects

用于亚毫米波电子器件的 SiGe 异质结双极晶体管技术 â 最新技术和未来前景

DOI：
10.1109/sirf.2018.8304230
发表时间：
2018
期刊：
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
影响因子：
0
作者：
M. Schröter;A. Pawlak
通讯作者：
A. Pawlak

SiGe HBT modeling for mm-wave circuit design

DOI：
10.1109/bctm.2015.7340560
发表时间：
2015-12
期刊：
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM
影响因子：
0
作者：
A. Pawlak;S. Lehmann;P. Sakalas;J. Krause;K. Aufinger;B. Ardouin;M. Schroter
通讯作者：
A. Pawlak;S. Lehmann;P. Sakalas;J. Krause;K. Aufinger;B. Ardouin;M. Schroter

Methods for Determining the Collector Series Resistance in SiGe HBTs—A Review and Evaluation Across Different Technologies

SiGe HBT 中集电极串联电阻的确定方法跨不同技术的审查和评估