THERMAL TRANSPORT IN TWO-DIMENSIONAL SEMICONDUCTOR MATERIALS

二维半导体材料中的热传输

• 批准号: 2051525
• 负责人: Xianfan Xu
• 金额: $ 33.3万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2051525&HistoricalAwards=false
• 关键词: THERMAL; TRANSPORT; TWO; DIMENSIONAL; SEMICONDUCTOR

Semiconductor thin films are building blocks for all modern electronics devices. In recent years, new semiconductor thin films consisting of crystalline single layer of atoms or stacks of a few crystalline atomic layers have been found to possess extraordinary properties. These new materials promise new devices in information technology, energy, and health care, and possibly in quantum technology. Understanding thermal transport in these new materials is important as heat dissipation has a large influence on the device performance. Thermal transport is also closely related to energy conversion processes such as thermoelectrics and photovoltaics. This project will investigate the fundamental and important issues of thermal transport in semiconductor materials to enable thermal design and thermal management in these materials and devices.The proposed project is built upon investigator’s extensive expertise in thermal transport processes, especially in the development of experimental methods for thermal transport research. The proposed project will employ advanced experimental tools to investigate the following fundamental problems: (1) the individual contributions of electrons and phonons to thermal transport in semiconductor thin films, (2) the relation between electrical and thermal transport by electrons in semiconductors, and (3) the bipolar diffusion which contributes to thermal transport in semiconductors, especially in low-bandgap two-dimensional semiconductor materials. Collectively, these studies will allow for measuring electric thermal conductivity, phonon conductivity, and total thermal conductivity, determining the value of the Lorenz number, evaluating the effect of bipolar diffusion, and investigating ultrafast energy scattering processes that are fundamental to the energy transport processes. The experimental work will be supplemented by computational studies to provide insights to the experimental results. The research outcome will contribute to many on-going studies in thermal transport in micro and nanoscale materials and devices, lead to much improved fundamental understandings of thermal transport by different energy carriers in semiconductors, and provide possible means to control thermal transport in semiconductor devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

半导体薄膜是所有现代电子器件的构建块。近年来，人们发现由单层或多层原子构成的新型半导体薄膜具有特殊的性能。这些新材料有望在信息技术、能源和医疗保健领域，甚至可能在量子技术领域产生新的设备。了解这些新材料中的热传输非常重要，因为散热对器件性能有很大影响。热输运也与能量转换过程密切相关，例如热电和光电转换。本项目将研究半导体材料中热输运的基本和重要问题，以实现这些材料和器件的热设计和热管理。拟议的项目是建立在研究人员在热输运过程中的广泛专业知识，特别是在开发热输运研究的实验方法。拟议的项目将采用先进的实验工具来研究以下基本问题：（1）电子和声子对半导体薄膜中热输运的各自贡献，（2）半导体中电子的电输运和热输运之间的关系，以及（3）有助于半导体中热输运的双极扩散，特别是在低带隙二维半导体材料中。总的来说，这些研究将允许测量电热导率，声子电导率和总热导率，确定洛伦兹数的值，评估双极扩散的影响，并研究超快能量散射过程，这是能量传输过程的基础。实验工作将通过计算研究来补充，以提供对实验结果的见解。研究成果将有助于许多正在进行的研究，在微和纳米材料和设备的热传输，导致大大改善的基本理解的热传输不同的能量载体在半导体，该奖项反映了NSF的法定使命，并通过使用基金会的智力价值进行评估，被认为值得支持和更广泛的影响审查标准。