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Non-destructive characterisation of residual stresses for the silicon-on-sapphire technology

Non-destructive characterisation of residual stresses for the silicon-on-sapphire technology
蓝宝石上硅技术残余应力的无损表征
批准号:
LP0882791
负责人:
Prof Liangchi Zhang
金额:
$20.15万
依托单位国家:
澳大利亚
项目类别:
Linkage Projects
财政年份:
2008
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2008-05-01 至 2011-05-01

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中文摘要
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英文摘要
Every sapphire wafer for the fabrication of integrated circuits using the silicon-on-sapphire technology is worth more than a thousand dollars, and the cost grows exponentially with successive processing of circuitry. Early detection and prevention of wafer failure is therefore an economic and quality necessity. The fast, non-destructive method to be developed by the proposed research will enable semiconductor electronics manufacturers to achieve a cost-effective fabrication of integrated circuits by detecting damages in wafers at the very early stage of production.
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