Non-destructive characterisation of residual stresses for the silicon-on-sapphire technology

蓝宝石上硅技术残余应力的无损表征

• 批准号: LP0882791
• 负责人: Prof Liangchi Zhang
• 金额: $ 20.15万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2008
• 资助国家: 澳大利亚
• 起止时间: 2008-05-01 至 2011-05-01
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP0882791
• 关键词: Non; destructive; characterisation; residual; stresses

Every sapphire wafer for the fabrication of integrated circuits using the silicon-on-sapphire technology is worth more than a thousand dollars, and the cost grows exponentially with successive processing of circuitry. Early detection and prevention of wafer failure is therefore an economic and quality necessity. The fast, non-destructive method to be developed by the proposed research will enable semiconductor electronics manufacturers to achieve a cost-effective fabrication of integrated circuits by detecting damages in wafers at the very early stage of production.

使用硅蓝宝石技术制造集成电路的每个蓝宝石晶片价值超过一千美元，并且随着电路的连续处理，成本呈指数级增长。 因此，晶片故障的早期检测和预防是经济和质量上的必要条件。拟议研究开发的快速，非破坏性方法将使半导体电子制造商能够通过在生产的早期阶段检测晶片中的损坏来实现具有成本效益的集成电路制造。