MRI:Acquisition of Ultra high Performance Electron Beam Lithography System for the Western New York Region

MRI：为纽约西部地区采购超高性能电子束光刻系统

• 批准号: 1919798
• 负责人: Uttam Singisetti
• 金额: $ 100万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-09-01 至 2021-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1919798&HistoricalAwards=false
• 关键词: MRI; Acquisition; Ultra; Performance; Electron

This major research instrumentation project is to acquire a high-performance Electron Beam Lithography system for research, education and broader impact in the Western New York region. The system uses an ultra-narrow beam of high energy electrons (1.8 nm wide) to define features on the scale of tens of nanometers. The unique capabilities of this advanced nanofabrication tool will enable crucial research in a broad range of fields spanning engineering, physics, chemistry, materials science and biology. The state-of-the-art tool will be installed at the University at Buffalo and provide both onsite and remote access to a large number of students, faculty, researchers and entrepreneurs across the region. The unique feature of the tool is the ability to define sub-10 nm dimension structures with fast writing speed over large areas. This feature is very important for cutting edge research in electronics and photonics. The aim is to rapidly translate the fundamental knowledge gained in academic laboratories to real world applications. Another feature of the tool is the ability to define nm structures on flexible substrates that are essential for biomedical applications. Undergraduate and graduate students in the engineering and science disciplines will have access to the tool. They will be trained in its use through courses and programs offered by the electrical engineering department at the University at Buffalo. The tool will enable cutting-edge research across computing, communications, healthcare, and education. The research opportunity given to undergraduate and graduate students will help build the skills of the future workforce for knowledge-based economy and maintain the economic competitiveness of the US. The tool will improve the research infrastructure in the western New York region and positively impact the economy of the region. The remote access feature will enable students to submit their designs for fabrication from any location. The instrument will also contribute to strong outreach programs in engineering and applied sciences. Investigators will provide mentorship to underrepresented students in science and engineering.Electron beam lithography is an indispensable tool for advanced research in electronics, photonics, physics, and materials science. The tool will enable research in a broad range of topics: low power non-volatile high speed ferroelectric and magneto-electric based logic and memory devices for energy efficient data intensive computing applications; emerging low power and efficient quantum devices; nano-electronics based on two-dimensional (2D) materials; high power flexible electronics based on widebandgap semiconductors; room temperature THz devices based on coupling of optical phonons in III-V semiconductors to graphene plasmonic structures; understanding of the fundamental physics in correlated electron systems; THz plasmonic structures for chemical and biological sensing; graphene plasmonic array for THz communication; and characterization of 2D materials, heterointerfaces, and devices. These high impact research have applications that range from computing, communication, energy and health. It will also help in understanding fundamental physics in correlated materials and the switching dynamics in technologically important antiferromagnetic oxides. The proposed tool to be acquired will have large acceleration voltage, sub-10nm lithographic resolution, high beam position resolution, sub-20 nm stitching and overlay accuracy, tunable field size up to 3000 micrometers for high throughput writing, and height correction feature for writing on flexible substrates. These unique features are essential to carry out the proposed research.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这个主要的研究仪器项目是为了在纽约西部地区获得一个高性能的电子束光刻系统，用于研究、教育和更广泛的影响。该系统使用超窄的高能电子束（1.8纳米宽）来定义几十纳米尺度上的特征。这种先进的纳米制造工具的独特功能将使工程、物理、化学、材料科学和生物学等广泛领域的重要研究成为可能。这个最先进的工具将安装在布法罗大学，为该地区的大量学生、教师、研究人员和企业家提供现场和远程访问。该工具的独特之处在于能够在大面积上定义低于10纳米的尺寸结构，并且具有快速的写入速度。这一特性对于电子和光子学的前沿研究非常重要。其目的是将在学术实验室中获得的基础知识迅速转化为现实世界的应用。该工具的另一个特点是能够在生物医学应用中必不可少的柔性基板上定义纳米结构。工程和科学学科的本科生和研究生都可以使用该工具。他们将通过布法罗大学电气工程系提供的课程和项目进行使用培训。该工具将使计算、通信、医疗保健和教育领域的前沿研究成为可能。为本科生和研究生提供的研究机会将有助于为知识经济培养未来劳动力的技能，并保持美国的经济竞争力。该工具将改善纽约西部地区的研究基础设施，并对该地区的经济产生积极影响。远程访问功能将使学生能够从任何位置提交他们的设计。该仪器还将有助于在工程和应用科学强有力的推广方案。调查人员将为科学和工程领域代表性不足的学生提供指导。电子束光刻技术是电子学、光子学、物理学和材料科学的先进研究中不可缺少的工具。该工具将使研究范围广泛：用于节能数据密集型计算应用的低功耗非易失性高速铁电和磁电逻辑与存储设备；新兴的低功耗高效量子器件；基于二维材料的纳米电子学；基于宽带隙半导体的高功率柔性电子器件基于III-V型半导体中光学声子与石墨烯等离子体结构耦合的室温太赫兹器件；对相关电子系统基本物理的理解；用于化学和生物传感的太赫兹等离子体结构；太赫兹通信用石墨烯等离子体阵列；二维材料、异质界面和器件的表征。这些高影响力的研究在计算、通信、能源和健康等领域都有应用。它也将有助于理解相关材料的基本物理学和技术上重要的反铁磁氧化物的开关动力学。拟收购的工具将具有大加速电压，低于10nm的光刻分辨率，高光束位置分辨率，低于20nm的拼接和覆盖精度，可调的场尺寸高达3000微米，用于高通量写入，以及用于柔性基板上写入的高度校正功能。这些独特的特征对开展拟议的研究至关重要。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Temperature dependent pulsed IV and RF characterization of β -(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 hetero-structure FET with ex situ passivation

采用异位钝化的 β -(Al x Ga 1âx ) 2 O 3 /Ga 2 O 3 异质结构 FET 的温度相关脉冲 IV 和 RF 特性

• DOI: 10.1063/5.0083657
• 发表时间: 2022
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Saha, Chinmoy Nath;Vaidya, Abhishek;Singisetti, Uttam
• 通讯作者: Singisetti, Uttam

Schottky diode characteristics on high-growth rate LPCVD β -Ga 2 O 3 films on (010) and (001) Ga 2 O 3 substrates

(010) 和 (001) Ga 2 O 3 基板上高生长速率 LPCVD β -Ga 2 O 3 薄膜上的肖特基二极管特性

• DOI: 10.1063/5.0083659
• 发表时间: 2022
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Saha, Sudipto;Meng, Lingyu;Feng, Zixuan;Anhar Uddin Bhuiyan, A. F. M.;Zhao, Hongping;Singisetti, Uttam
• 通讯作者: Singisetti, Uttam