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MRI:Acquisition of Ultra high Performance Electron Beam Lithography System for the Western New York Region

MRI:Acquisition of Ultra high Performance Electron Beam Lithography System for the Western New York Region
MRI:为纽约西部地区采购超高性能电子束光刻系统
批准号:
1919798
负责人:
Uttam Singisetti
金额:
$100.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-09-01 至 2021-08-31

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中文摘要
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英文摘要
This major research instrumentation project is to acquire a high-performance Electron Beam Lithography system for research, education and broader impact in the Western New York region. The system uses an ultra-narrow beam of high energy electrons (1.8 nm wide) to define features on the scale of tens of nanometers. The unique capabilities of this advanced nanofabrication tool will enable crucial research in a broad range of fields spanning engineering, physics, chemistry, materials science and biology. The state-of-the-art tool will be installed at the University at Buffalo and provide both onsite and remote access to a large number of students, faculty, researchers and entrepreneurs across the region. The unique feature of the tool is the ability to define sub-10 nm dimension structures with fast writing speed over large areas. This feature is very important for cutting edge research in electronics and photonics. The aim is to rapidly translate the fundamental knowledge gained in academic laboratories to real world applications. Another feature of the tool is the ability to define nm structures on flexible substrates that are essential for biomedical applications. Undergraduate and graduate students in the engineering and science disciplines will have access to the tool. They will be trained in its use through courses and programs offered by the electrical engineering department at the University at Buffalo. The tool will enable cutting-edge research across computing, communications, healthcare, and education. The research opportunity given to undergraduate and graduate students will help build the skills of the future workforce for knowledge-based economy and maintain the economic competitiveness of the US. The tool will improve the research infrastructure in the western New York region and positively impact the economy of the region. The remote access feature will enable students to submit their designs for fabrication from any location. The instrument will also contribute to strong outreach programs in engineering and applied sciences. Investigators will provide mentorship to underrepresented students in science and engineering.Electron beam lithography is an indispensable tool for advanced research in electronics, photonics, physics, and materials science. The tool will enable research in a broad range of topics: low power non-volatile high speed ferroelectric and magneto-electric based logic and memory devices for energy efficient data intensive computing applications; emerging low power and efficient quantum devices; nano-electronics based on two-dimensional (2D) materials; high power flexible electronics based on widebandgap semiconductors; room temperature THz devices based on coupling of optical phonons in III-V semiconductors to graphene plasmonic structures; understanding of the fundamental physics in correlated electron systems; THz plasmonic structures for chemical and biological sensing; graphene plasmonic array for THz communication; and characterization of 2D materials, heterointerfaces, and devices. These high impact research have applications that range from computing, communication, energy and health. It will also help in understanding fundamental physics in correlated materials and the switching dynamics in technologically important antiferromagnetic oxides. The proposed tool to be acquired will have large acceleration voltage, sub-10nm lithographic resolution, high beam position resolution, sub-20 nm stitching and overlay accuracy, tunable field size up to 3000 micrometers for high throughput writing, and height correction feature for writing on flexible substrates. These unique features are essential to carry out the proposed research.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(3)
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会议论文
Temperature dependent pulsed IV and RF characterization of β -(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 hetero-structure FET with ex situ passivation
采用异位钝化的 β -(Al x Ga 1âx ) 2 O 3 /Ga 2 O 3 异质结构 FET 的温度相关脉冲 IV 和 RF 特性
DOI: 10.1063/5.0083657
发表时间: 2022
期刊: Applied Physics Letters
影响因子: 4
作者: [Saha, Chinmoy Nath, Vaidya, Abhishek, Singisetti, Uttam]
通讯作者: Singisetti, Uttam
Schottky diode characteristics on high-growth rate LPCVD β -Ga 2 O 3 films on (010) and (001) Ga 2 O 3 substrates
(010) 和 (001) Ga 2 O 3 基板上高生长速率 LPCVD β -Ga 2 O 3 薄膜上的肖特基二极管特性
DOI: 10.1063/5.0083659
发表时间: 2022
期刊: Applied Physics Letters
影响因子: 4
作者: [Saha, Sudipto, Meng, Lingyu, Feng, Zixuan, Anhar Uddin Bhuiyan, A. F. M., Zhao, Hongping, Singisetti, Uttam]
通讯作者: Singisetti, Uttam
Conference: 6th US Gallium Oxide Workshop
  • 批准号:
    2324760
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.4万
  • 财政年份:
    2023
  • 负责人:
    Uttam Singisetti
  • 依托单位:
MRI: Acquisition of Magento-optical-high-frequency cryogen free probe station for research and education
  • 批准号:
    2215937
  • 项目类别:
    Standard Grant
  • 资助金额:
    $24.27万
  • 财政年份:
    2022
  • 负责人:
    Uttam Singisetti
  • 依托单位:
ASCENT: Enabling efficient high power grid applications by high voltage rating ultrawidebandgap transistors
  • 批准号:
    2231026
  • 项目类别:
    Standard Grant
  • 资助金额:
    $150.0万
  • 财政年份:
    2022
  • 负责人:
    Uttam Singisetti
  • 依托单位:
Collaborative Research: Beta-Ga2O3 high voltage power MOSFETs using metal-organic chemical vapor deposition
  • 批准号:
    2019749
  • 项目类别:
    Standard Grant
  • 资助金额:
    $27.3万
  • 财政年份:
    2020
  • 负责人:
    Uttam Singisetti
  • 依托单位:
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