ASCENT: Enabling efficient high power grid applications by high voltage rating ultrawidebandgap transistors

ASCENT：通过高额定电压超宽带隙晶体管实现高效的高电网应用

• 批准号: 2231026
• 负责人: Uttam Singisetti
• 金额: $ 150万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-10-01 至 2026-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2231026&HistoricalAwards=false
• 关键词: ASCENT; Enabling; efficient; power; grid

This project aims to both understand the science and develop engineering of an emerging ultra-widebandgap semiconductor, gallium oxide, for the next generation high voltage, high current power electronics. Power electronics plays an essential role in several innovative technologies including integration of renewables to grid, electric cars, planes, and ships to name a few. The multidisciplinary team addresses several challenges spanning from the synthesis of low defect density materials to applications and benchmarking of device prototypes in high power converters. An important challenge in high power applications is the ability to manage heat dissipation during the device operation. This project addresses this challenge by integrating gallium oxide with a high thermal conductivity material which can efficiently dissipate heat. Additionally, innovative device designs and circuit topologies will be developed for high voltage, high power and low loss operation. Success in the program would enable power device and circuit technologies beyond the state-of-the-art technologies. The new technology would foster innovation in power electronics market. The fundamental study aspects of the project would increase the understanding of the electronic properties of ultra-widebandgap semiconductors which have applications beyond power electronics. The education and training of the diverse students working on the project would enhance their technical skills in semiconductor manufacturing. Domestic semiconductor manufacturing is currently a national priority for US economic leadership and national security. Educational outreach activities will be integrated with research tasks. The goal of the outreach efforts is to inculcate interest of middle and high school students to science and engineering fields, specifically targeting students from underrepresented minorities (URM). Beta-gallium oxide (Ga2O3) has achieved robust maturity with low background doping densities, excellent doping control and electron mobilities reaching theoretically predicted values. The large predicted and experimentally demonstrated electric field strengths and good electron mobility makes it an attractive semiconductor for high voltage ( 10 kV) rating power devices. Such high voltage ratings can be achieved in thin drift layers that can be grown with low defect densities and high uniformity by metal organic chemical vapor deposition (MOCVD). The project leverages the experimental demonstration of in-situ Mg doped current blocking layers grown by MOCVD. The team has also demonstrated integration of gallium oxide onto high thermal conductivity substrates. The scientific objectives of this project are (i) developing and optimizing in-situ Mg doped current blocking and thick Ga2O3 drift layers with low controllable doping for high voltage and high power operation; (ii) design, fabrication, and measurement of high power MOSFETs with high breakdown blocking capability; (iii) heterogeneous integration of the power devices onto high thermal conductivity substrates for thermal management and (iv) investigation of switching losses and paralleling techniques, as well as benchmarking of practical circuits using the developed power devices. If successful, the proposed innovative device will enable efficient high-power switches with beyond 10 kV voltage ratings thus drastically reducing the cost and increasing the efficiency of high-power circuits. These technologies can accelerate the integration of renewables to the grid and lead to truly smart grid operation. The integrated education plan aims to educate and motivate young students, especially female students, and those from the URM groups, to pursue STEM studies and careers by direct participation in the proposed research activities. The research opportunity given to undergraduate and graduate students will help build the skills of the future semiconductor workforce for domestic manufacturing and maintain the economic competitiveness of the US.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该项目旨在了解一种新兴的超宽带隙半导体氧化镓的科学和开发工程，用于下一代高压、大电流电力电子产品。电力电子在几项创新技术中发挥着至关重要的作用，包括将可再生能源整合到电网、电动汽车、飞机和船舶等。多学科团队解决了从低缺陷密度材料的合成到高功率转换器中设备原型的应用和基准测试的几个挑战。高功率应用中的一个重要挑战是在设备运行期间管理散热的能力。该项目通过将氧化镓与一种可以有效散热的高导热材料相结合来解决这一挑战。此外，还将为高电压、高功率和低损耗运行开发创新的器件设计和电路拓扑。该计划的成功将使电力设备和电路技术超越最先进的技术。这项新技术将促进电力电子市场的创新。该项目的基础研究方面将增加对超宽带隙半导体的电子性质的理解，这些半导体的应用超出了电力电子的范畴。对参与该项目的不同学生的教育和培训将提高他们在半导体制造方面的技术技能。国内半导体制造目前是美国经济领导地位和国家安全的国家优先事项。教育外展活动将与研究任务相结合。外展工作的目标是向初中生和高中生灌输对科学和工程领域的兴趣，特别是针对代表人数不足的少数族裔的学生。背景掺杂密度低、掺杂控制性能好、电子迁移率达到理论预测值的β-氧化镓(Ga2O3)材料已经成熟。预测和实验证明的大电场强度和良好的电子迁移率使其成为高电压(10kV)额定功率器件的一种有吸引力的半导体。这种高额定电压可以在薄的漂移层中实现，这种漂移层可以通过金属有机化学气相沉积(MOCVD)以低缺陷密度和高一致性生长。该项目利用MOCVD生长的原位掺镁电流阻挡层的实验演示。该团队还展示了将氧化镓集成到高导热衬底上。该项目的科学目标是：(I)开发和优化原位掺镁电流阻挡层和用于高压大功率工作的低掺杂可控厚Ga2O3漂移层；(Ii)设计、制造和测量具有高击穿阻断能力的大功率MOSFET；(Iii)将功率器件异质集成到用于热管理的高导热衬底上；(Iv)研究开关损耗和并联技术，以及使用所开发的功率器件对实际电路进行基准测试。如果成功，建议的创新设备将实现超过10千伏额定电压的高效大功率开关，从而大幅降低成本，提高大功率电路的效率。这些技术可以加快可再生能源与电网的整合，实现真正的智能电网运营。综合教育计划旨在通过直接参与拟议的研究活动，教育和激励年轻学生，特别是女学生，以及来自城市管理小组的学生，从事STEM学习和职业生涯。为本科生和研究生提供的研究机会将有助于为国内制造业培养未来半导体劳动力的技能，并保持美国的经济竞争力。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al x Ga 1−x ) 2 O 3 alloys

MOCVD 生长的 m 面 α-(Al x Ga 1–x ) 2 O 3 合金各向异性光学性能的测定

• DOI: 10.35848/1347-4065/acd095
• 发表时间: 2023
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Kluth, Elias;Anhar Uddin Bhuiyan, A. F. M.;Meng, Lingyu;Bläsing, Jürgen;Zhao, Hongping;Strittmatter, André;Goldhahn, Rüdiger;Feneberg, Martin
• 通讯作者: Feneberg, Martin

The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor

使用 TMGa 作为前体的 MOCVD β-Ga2O3 中碳和 C-H 中和的作用

• DOI: 10.1063/5.0153626
• 发表时间: 2023
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Meng, Lingyu;Bhuiyan, A F;Zhao, Hongping
• 通讯作者: Zhao, Hongping

Metalorganic chemical vapor deposition of β-(Al x Ga 1−x ) 2 O 3 thin films on (001) β-Ga 2 O 3 substrates

(001) β-Ga 2 O 3 基底上的金属有机化学气相沉积β-(Al x Ga 1âx ) 2 O 3 薄膜

• DOI: 10.1063/5.0142746
• 发表时间: 2023
• 期刊: APL Materials
• 影响因子: 6.1
• 作者: Uddin Bhuiyan, A F;Meng, Lingyu;Huang, Hsien-Lien;Sarker, Jith;Chae, Chris;Mazumder, Baishakhi;Hwang, Jinwoo;Zhao, Hongping
• 通讯作者: Zhao, Hongping