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Collaborative Research: FuSe:Substrate-inverted Multi-Material Integration Technology

Collaborative Research: FuSe:Substrate-inverted Multi-Material Integration Technology
合作研究:FuSe:衬底倒置多材料集成技术
批准号:
2328840
负责人:
Yuping Zeng
金额:
$35.92万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2023
资助国家:
美国
项目状态:
未结题
起止时间:
2023-11-01 至 2026-10-31

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中文摘要
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英文摘要
Heterogeneous integration of new materials promises to significantly expand the range of capabilities accessible by silicon photonic integrated circuits (PICs). However, classical integration protocols require custom deep etching through the top layers to access the photonic devices underneath, and thus face severe limitations in integration capacity, density, and process complexity. This program will explore co-design of new materials, integration processes, device architectures, and packaging solutions to realize a transformative universal heterogeneous integration platform: Substrate-inverted Multi-Material Integration Technology (SuMMIT). Upon success, the SuMMIT platform will significantly expand and expedite heterogeneous photonic integration of new materials—a key driving force for PIC technology advances. The program will also strengthen academia-industry partnership and workforce development through development of both online and in-person photonics training programs.The SuMMIT integration scheme leverages advanced wafer-scale 3-D packaging technologies such as through-Si vias and direct bond interconnects to enable seamless integration of materials traditionally considered incompatible with complementary metal-oxide semiconductor processing. Another innovative aspect of the proposed scheme is the use of through-Si vias to establish a bi-facial electrical and optical interconnect configuration, which offers much higher interconnect density and improved electrical performance such as latency and power consumption as compared to peripheral wire-bonding. Furthermore, the SuMMIT platform opens up a plethora of design concepts creatively re-purposing existing components and structures in industry-standard PICs towards facilitating heterogeneous integration. The program’s focus on building on standard PIC processes and structures with minimal customization facilitates industry adoption of the innovations and their integration into the existing semiconductor manufacturing ecosystem.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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CAREER: Enhancing GaN-on-Si high electron mobility transistor technology for high frequency and high power applications
  • 批准号:
    2239302
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $50.0万
  • 财政年份:
    2023
  • 负责人:
    Yuping Zeng
  • 依托单位:
I-Corps: Tunnel FET-based transistor logic for ultra-low-power applications
  • 批准号:
    1806182
  • 项目类别:
    Standard Grant
  • 资助金额:
    $5.0万
  • 财政年份:
    2018
  • 负责人:
    Yuping Zeng
  • 依托单位:
国内基金
海外基金
Research on Quantum Field Theory without a Lagrangian Description
  • 批准号:
    24ZR1403900
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    SATOSHI NAWATA
  • 依托单位:
Cell Research
Cell Research
Cell Research (细胞研究)