Collaborative Research: FuSe:Substrate-inverted Multi-Material Integration Technology

合作研究：FuSe：衬底倒置多材料集成技术

• 批准号: 2328840
• 负责人: Yuping Zeng
• 金额: $ 35.92万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-11-01 至 2026-10-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2328840&HistoricalAwards=false
• 关键词: Collaborative; Research; FuSe; Substrate; inverted

Heterogeneous integration of new materials promises to significantly expand the range of capabilities accessible by silicon photonic integrated circuits (PICs). However, classical integration protocols require custom deep etching through the top layers to access the photonic devices underneath, and thus face severe limitations in integration capacity, density, and process complexity. This program will explore co-design of new materials, integration processes, device architectures, and packaging solutions to realize a transformative universal heterogeneous integration platform: Substrate-inverted Multi-Material Integration Technology (SuMMIT). Upon success, the SuMMIT platform will significantly expand and expedite heterogeneous photonic integration of new materials—a key driving force for PIC technology advances. The program will also strengthen academia-industry partnership and workforce development through development of both online and in-person photonics training programs.The SuMMIT integration scheme leverages advanced wafer-scale 3-D packaging technologies such as through-Si vias and direct bond interconnects to enable seamless integration of materials traditionally considered incompatible with complementary metal-oxide semiconductor processing. Another innovative aspect of the proposed scheme is the use of through-Si vias to establish a bi-facial electrical and optical interconnect configuration, which offers much higher interconnect density and improved electrical performance such as latency and power consumption as compared to peripheral wire-bonding. Furthermore, the SuMMIT platform opens up a plethora of design concepts creatively re-purposing existing components and structures in industry-standard PICs towards facilitating heterogeneous integration. The program’s focus on building on standard PIC processes and structures with minimal customization facilitates industry adoption of the innovations and their integration into the existing semiconductor manufacturing ecosystem.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

新材料的异质集成有望极大地扩展硅光子集成电路(PIC)的能力范围。然而，传统的集成协议需要定制的通过顶层的深度蚀刻来访问下面的光子器件，因此在集成容量、密度和工艺复杂性方面面临着严重的限制。该项目将探索新材料、集成工艺、器件架构和封装解决方案的联合设计，以实现一个变革性的通用异质集成平台：衬底-倒置多材料集成技术(TOMAP)。成功后，峰会平台将显著扩大和加快新材料的异质光子集成-这是PIC技术进步的关键驱动力。该计划还将通过开发在线和面对面的光子学培训计划来加强学术界和产业界的合作伙伴关系和劳动力发展。峰会集成计划利用先进的晶片规模的3-D封装技术，如贯通硅通孔和直接键合互连，使传统上被认为与互补金属氧化物半导体加工不兼容的材料能够实现无缝集成。该方案的另一个创新方面是使用直通硅通孔来建立双面电光互连配置，与外围引线键合相比，该配置提供了更高的互连密度和更好的电性能，例如延迟和功耗。此外，峰会平台开启了过多的设计概念，创造性地重新调整行业标准图片中现有组件和结构的用途，以促进不同类型的整合。该计划专注于以最低限度的定制构建标准PIC工艺和结构，促进了行业采用这些创新并将其集成到现有的半导体制造生态系统中。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。