Locally active memristive data processing (LAMP)

复杂的行为和丰富的动力学可能只出现在局部活动的系统中。局域活动是指非线性动力系统放大能量无限微小波动的能力。这一性质适用于任何类型的系统，但它最初是在电路理论中定义的。晶体管是微电子领域局部有源系统的一个例子。他们的发明可以追溯到1947年，使信息技术发生了革命性的变化，导致了电子系统的出现，这些系统成为我们日常生活的一部分。最近的研究表明，在适当的偏压下，特定类型的纳米级忆阻器可以作为局部激活的电路元件。由于其简单的结构和小尺寸，局部有源忆阻器可能导致电子世界的下一次革命，丰富功能范围和/或改善前忆阻器时代电路的性能。充分了解局部有源记忆阻器特有的非线性动态特性，为基于它们的电路设计打开了一扇门。该项目的第一个目标是对室内制造的局部有源记忆阻器的复杂动力学进行精确的实验和数学表征。其次，我们将使用非线性系统理论的概念来推导物理结构的数学描述的模型表示，以用于分析处理和时间效率模拟。然后，我们计划研究模型表示的动力学，同时考虑到其非线性行为中的随机可变性。我们实验的另一个目标是通过优化器件结构和材料选择，将这种可变性降低到所研究的应用所需的合适的低水平。最后，实验和理论研究的结果将支持从时空模式识别和数字逻辑两个不同的应用中选择的电路的设计和制造，并基于我们设备的局部激活阈值开关行为。

Complex behaviors and rich dynamics may arise in locally active systems only. Local activity is the capability of a nonlinear dynamical system to amplify infinitesimal fluctuations in energy. This property applies to systems of any kind, but it was originally defined in the theory of circuits. The transistors are an example of locally active systems from the field of microelectronics. Their invention, tracing back to 1947, has revolutionized information technology, leading to the appearance of electronic systems which make part of our daily lives. It has been recently shown that particular types of nano-scale memristor may act as locally active circuit elements under suitable biasing. Thanks to its simple structure and small dimension the locally active memristor might lead to the next revolution in the world of electronics, enriching the range of functionalities and/or improving the performance of pre-memristor era circuits. Gaining a full understanding of the peculiar nonlinear dynamics of locally active memristors represents a door opener for the design of circuits based upon them. This first aim of this project lies in an accurate experimental and mathematical characterization of the complex dynamics of a locally active memristor fabricated in house. Secondly, we shall use concepts from nonlinear system theory to derive model representations of the mathematical description of the physical structure for analytical treatment and time efficient simulations. We then plan to investigate the dynamics of the model representations taking the stochastic variability in its nonlinear behavior into account. it is a further goal of our experiments to reduce this variability to a suitable low level as required by the application under investigation through the optimization of the device structure and material choice. Finally, the outcome of the experimental and theoretical investigations shall support the design and fabrication of electrical circuits chosen from two distinct applications - spatio-temporal pattern recognition and digital logic - and based upon the locally-active threshold switching behavior of our device.