Locally active memristive data processing (LAMP)

本地主动忆阻数据处理 (LAMP)

• 批准号: 273537230
• 负责人: Professor Dr.-Ing. Thomas Mikolajick
• 金额: --
• 依托单位: Institut für Halbleiter- und Mikrosystemtechnik (IHM)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/273537230?language=en
• 关键词: Locally; active; memristive; data; processing

Complex behaviors and rich dynamics may arise in locally active systems only. Local activity is the capability of a nonlinear dynamical system to amplify infinitesimal fluctuations in energy. This property applies to systems of any kind, but it was originally defined in the theory of circuits. The transistors are an example of locally active systems from the field of microelectronics. Their invention, tracing back to 1947, has revolutionized information technology, leading to the appearance of electronic systems which make part of our daily lives. It has been recently shown that particular types of nano-scale memristor may act as locally active circuit elements under suitable biasing. Thanks to its simple structure and small dimension the locally active memristor might lead to the next revolution in the world of electronics, enriching the range of functionalities and/or improving the performance of pre-memristor era circuits. Gaining a full understanding of the peculiar nonlinear dynamics of locally active memristors represents a door opener for the design of circuits based upon them. This first aim of this project lies in an accurate experimental and mathematical characterization of the complex dynamics of a locally active memristor fabricated in house. Secondly, we shall use concepts from nonlinear system theory to derive model representations of the mathematical description of the physical structure for analytical treatment and time efficient simulations. We then plan to investigate the dynamics of the model representations taking the stochastic variability in its nonlinear behavior into account. it is a further goal of our experiments to reduce this variability to a suitable low level as required by the application under investigation through the optimization of the device structure and material choice. Finally, the outcome of the experimental and theoretical investigations shall support the design and fabrication of electrical circuits chosen from two distinct applications - spatio-temporal pattern recognition and digital logic - and based upon the locally-active threshold switching behavior of our device.

复杂的行为和丰富的动态可能只出现在局部活跃的系统。局部活动是非线性动力系统放大能量中无穷小波动的能力。这个性质适用于任何类型的系统，但它最初是在电路理论中定义的。晶体管是来自微电子学领域的局部有源系统的示例。他们的发明，追溯到1947年，彻底改变了信息技术，导致电子系统的出现，成为我们日常生活的一部分。最近已经表明，特定类型的纳米级忆阻器可以在合适的偏置下充当局部有源电路元件。由于其简单的结构和小尺寸，局部有源忆阻器可能会导致电子世界的下一次革命，丰富功能范围和/或提高忆阻器前时代电路的性能。充分理解局部有源忆阻器特有的非线性动力学，为基于它们的电路设计打开了大门。这个项目的第一个目标在于一个精确的实验和数学表征的复杂动态的本地有源忆阻器制造的房子。其次，我们将使用非线性系统理论的概念，推导出物理结构的数学描述的模型表示，用于分析处理和时间有效的模拟。然后，我们计划调查的动态模型表示考虑到其非线性行为的随机变化。我们实验的另一个目标是通过优化器件结构和材料选择将这种可变性降低到研究中的应用所需的适当的低水平。最后，实验和理论研究的结果应支持从两个不同的应用程序-时空模式识别和数字逻辑-并根据我们的设备的本地活动阈值切换行为的电路的设计和制造。

项目成果

Analysis of Vth variability in NbOx-based threshold switches

基于 NbOx 的阈值开关的 Vth 变异性分析

• DOI: 10.1109/nvmts.2016.7781515
• 发表时间: 2016
• 期刊: 2016 16th Non-Volatile Memory Technology Symposium (NVMTS)
• 作者: S. Slesazeck;M. Herzig;T. Mikolajick;A. Ascoli;M. Weiher;R. Tetzlaff
• 通讯作者: R. Tetzlaff

Multiple slopes in the negative differential resistance region of NbOx-based threshold switches

• DOI: 10.1088/1361-6463/ab217a
• 发表时间: 2019-08-07
• 期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
• 影响因子: 3.4
• 作者: Herzig, Melanie;Weiher, Martin;Slesazeck, Stefan
• 通讯作者: Slesazeck, Stefan

Physical model of threshold switching in NbO2 based memristors

• DOI: 10.1039/c5ra19300a
• 发表时间: 2015-01-01
• 期刊: RSC ADVANCES
• 影响因子: 3.9
• 作者: Slesazeck, S.;Maehne, H.;Mikolajick, T.
• 通讯作者: Mikolajick, T.

Improved Vertex Coloring With NbOₓ Memristor-Based Oscillatory Networks

• DOI: 10.1109/tcsi.2021.3061973
• 发表时间: 2021-05
• 期刊: IEEE Transactions on Circuits and Systems I: Regular Papers
• 作者: M. Weiher;M. Herzig;R. Tetzlaff;A. Ascoli;T. Mikolajick;S. Slesazeck

Control Strategies to Optimize Graph Coloring via M-CNNs with Locally-Active NbOx Memristors

通过具有局部有源 NbOx 忆阻器的 M-CNN 优化图形着色的控制策略

• DOI: 10.1109/mocast52088.2021.9493418
• 发表时间: 2021
• 期刊: 2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST)
• 作者: A. Ascoli;M. Weiher;R. Tetzlaff;M. Herzig;S. Slesazeck;T. Mikolajick
• 通讯作者: T. Mikolajick